71112 tkim/42506sb msim tb-00000475 no.a0407-1/6 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 SB01-15C schottky barrier diode 150v, 0.1a, low ir, single cp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. product & package information ? package : cp ? jeita, jedec : sc-59, to-236, sot-23, to-236ab ? minimum packing quantity : 3,000 pcs./reel packing type: tb marking electrical connection 1 : anode 2 : no contact 3 : cathode cp 12 3 1.5 2.5 1.1 0.3 0.05 2.9 0.95 0.4 0.1 0.5 0.5 tb f lot no. lot no. SB01-15C-tb-e 3 12 applications ? high frequency recti cation (switching regulators, converters, choppers) features ? low forward voltage (v f max=0.75v) ? fast reverse recovery time (t rr max=10ns) ? low switching noise ? low leakage current and high reliability due to highly reliable planar structure speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit repetitive peak reverse voltage v rrm 150 v nonrepetitive peak reverse surge voltage v rsm 155 v average output current i o 100 ma surge forward current i fsm 50hz sine wave, 1 cycle 5 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c package dimensions unit : mm (typ) 7013a-004 ordering number : ena0407a
SB01-15C no.a0407-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max reverse voltage v r i r =200 a 150 v forward voltage v f i f =100ma 0.75 v reverse current i r v r =75v 50 a interterminal capacitance c v r =10v, f=1mhz 7 pf reverse recovery time t rr i f =i r =100ma, see speci ed test circuit. 10 ns thermal resistance rth(j-a)1 420 c / w rth(j-a)2 mounted in cu-foiled area of 16mm 2 0.2mm on glass epoxy board 330 c / w t rr test circuit ordering information duty 10% 50 100 10 --5v t rr 10 s 100ma 100ma 10ma (3) 1.0 2 1.0 3 7 5 2 10 3 5 22 357 23 3 57 10 100 id00277 c -- v r 0 0.4 0.8 1.2 1.6 2.0 2.4 id00274 i f -- v f ta=125 c 25 c 0 25 50 75 100 125 150 175 id00275 i r -- v r 10 5 7 2 3 3 5 5 7 7 2 100 1000 0.1 1.0 5 2 5 2 10 100 1000 5 5 2 2 0 20 40 60 80 100 120 id00276 p f (av) -- i o 0 20 40 60 80 100 120 (2) (4) (1) f=1mhz 100 c 50 c 75 c ta=125 c forward voltage, v f -- v forward current, i f -- m a reverse voltage, v r -- v reverse current, i r -- a average output current, i o -- m a average forward power dissipation, p f (av) -- mw reverse voltage, v r -- v interterminal capacitance, c -- pf (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 180 360 360 rectangular wave sine wave 25 c
SB01-15C noa0407-3/6 7 0.01 23 7 0.1 0 52 23 37 1.0 5 6 7 4 2 5 3 1 it00278 i fsm -- t i s 20ms t time, t -- s surge forward current, i fsm (peak) -- a current waveform 50hz sine wave
SB01-15C no.a0407-4/6 embossed taping speci cation SB01-15C-tb-e
SB01-15C noa0407-5/6 outline drawing land pattern example SB01-15C-tb-e mass (g) unit 0.013 * for reference mm unit: mm 0.95 0.95 1.0 2.4 0.8
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