nte5550 thru NTE5558 silicon controlled rectifiers description: the nte5550 thru NTE5558 scr?s are designed primarily for half?wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. features: glass passivated junctions with center gate fire for greater parameter uniformity and stability. small, rugged, thermowatt constructed for low thermal resistance, high heat dissipation and durability. blocking voltage to 800 volts 300a surge current capability absolute maximum ratings: peak reverse blocking voltage (note 1), v rrm nte5550 50v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . nte5552 200v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . nte5554 400v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . nte5556 600v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5558 800v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward current (t c = +85 c), i t(rms) 25a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (all conduction angles), i t(av) 16a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak non?repetitive surge current (8.3ms), i tsm 300a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (1/2 cycle, sine wave, 1.5ms) 350a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward peak gate power, p gm 20w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward average gate power, p g(av) 0.5w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward peak gate current, i gm 2a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ?40 to +125 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?40 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction?to?case, r thjc 1.5 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . note 1. v rrm for all types can be applied on a continuous dc basis without incurring damage. ratings apply for zero or negative gate voltage. devices should not be tested for block- ing capability in a manner such that the voltage supplied exceeds the rated blocking voltage.
electrical characteristics: (t c = +25 c unless otherwise noted.) parameter symbol min typ max unit peak forward blocking voltage, (t j = +125 c) nte5550 nte5552 nte5554 nte5556 NTE5558 v drm 50 200 400 600 800 ? ? ? ? ? ? ? ? ? ? v peak forward or reverse blocking current, (rated v drm or v rrm )t j = +25 c t j = +125 c i drm , i rrm ? ? ? ? 10 2 a ma forward ? on ? voltage, (i tm = 50a, note 2) v tm ? ? 1.8 v gate trigger current (continuous dc), t c = +25 c (anode voltage = 12vdc, r l = 100 ? ) t c = ? 40 c i gt ? ? ? 25 40 75 ma gate trigger voltage (continuous dc) (anode voltage = 12vdc, r l = 100 ? , t c = ? 40 c) v gt ? 1 1.5 v gate non ? trigger voltage (anode voltage = rated v drm , r l =100 ? , t j = +125 c) v gd 0.2 ? ? v holding current (anode voltage = 12vdc, t c = ? 40 c) i h ? 35 40 ma turn ? on time (i tm = 25a, i gt = 50madc) t gt ? 1.5 2 s turn ? off time (v drm = rated voltage) (i tm =25a, i r = 25a) (i tm =25a, i r = 25a, t j = +125 c) t q ? ? 15 35 ? ? s critical rate of rise of off ? state voltage (gate open, rated v drm , exponential waveform) dv/dt ? 50 ? v/ s note 2. pulse test: pulse width 300 s, duty cycle 2%. .250 (6.35) max .500 (12.7) max .500 (12.7) min .110 (2.79) .420 (10.67) max .070 (1.78) max cathode .100 (2.54) anode/tab gate .147 (3.75) dia max
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