19 push - pull ay 230.0 7.0 240.0 0.18 c/w 110 7.0 48.00 2.0 70 0.20 12.00 24.0 1,000 0.60 110 parameter symbol min typ max units test conditions common source power gain drain efficiency total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to source voltage gate to source voltage -65 c to 150 c c a v load mismatch tolerance vswr drain to gate voltage relative 0.80 100.00 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.80 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacitance idq = idq = 0.80 80 vgs = 20v, ids = rdson saturation resistance forward transconductance gm vds = 10v, vgs = 5v polyfet rf devices 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:sell@polyfet.com url:www.polyfet.com 80 80 common source input capacitance 110 v igss vgs idsat zero bias drain current gate leakage current gate bias for drain current saturation current 25 ua v mho ohm amp parameter symbol min typ max units test conditions electrical characteristics ( each side ) rf characteristics ( 600.0 absolute maximum ratings ( t = gps 50.0 a, vds = v, f = a, vds = v, f = 50.0 50.0 watts v 1 mhz mhz mhz watts package style 600.0 vds = 0v vgs = 30v vgs = 20v, vds = 10v high efficiency, linear high gain, low noise general description 50.0 vds = a, vgs = vds ids = a db % o o o o o silicon vdmos and ldmos transistors designed specifically for broadband rf applications. suitable for military radios, cellular and paging amplifier base stations, broadcast fm/am, mri, laser driver and others. "polyfet" process features low feedback and output capacitances, resulting in high f transistors with high input impedance and high efficiency. tm t silicon gate enhancement mode rf power transistor ldmos vgs = 0v, f = 1 mhz 50.0 vds = vgs = 0v, f = 1 mhz 50.0 vds = vgs = 0v, f = 1 mhz 50.0 revision 11/09/2009 20 25 c ) watts output ) 200 polyfet rf devices LY942 13:1 rohs compliant
l9 2 die id&gm 0.01 0.10 1.00 10.00 100.00 02 4681012 v g s in v o lts id in amps; gm in mhos id gm l9 2die capacitance 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 vds in volts capacitance in pfs coss ciss crss LY942 cw: pout/gain vs pin, freq=80mhz; vds=50vdc, idq=.8a 0 100 200 300 400 500 600 700 0246810 p in in w a tts pout in watts 18 19 19 20 20 21 21 gain in db pout gain efficiency 73% at 600w polyfet rf devices pout vs pin graph capacitance vs voltage id & gm vs vgs iv curve zin zout package dimensions in inches LY942 l9 2 die iv curve 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 101214161820 vds in volts id in amps vg =2 v vg=4v vg=6v vg =8v vg =10 v vg=12v 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:sell@polyfet.com url:www.polyfet.com revision 11/09/2009 tolerance .xx +/-0.01 .xxx +/-.005 inches
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