advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 700v esd improved capability r ds(on) 7 simple drive requirement i d 1.6a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 2.8 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice storage temperature range -55 to 150 6.4 45 1 -55 to 150 parameter AP02N70EJ parameter rating 700 200712241 rohs-compliant product 1.6 20 13 1.6 1 a p02n70 from apec provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. the to-251 package is widely preferred for commercial-industrial through hole applications and suited for ac/dc converters. g d s to-251(j) s g d
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 700 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =0.8a - - 7 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.8a - 0.65 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =20v - - 10 ua q g total gate charge 3 i d =0.8a - 17 30 nc q gs gate-source charge v ds =560v - 1.5 - nc q gd gate-drain ("miller") charge v gs =10v - 11 - nc t d(on) turn-on delay time 3 v dd =350v - 10 - ns t r rise time i d =0.8a - 8 - ns t d(off) turn-off delay time r g =4.7 ? v gs =10v - 21 - ns t f fall time r d =438 -15- ns c iss input capacitance v gs =0v - 170 300 pf c oss output capacitance v ds =25v - 30 - pf c rss reverse transfer capacitance f=1.0mhz - 20 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =1.6a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =1.6a, v gs =0v, - 340 - ns q rr reverse recovery charge di/dt=100a/s - 2550 - nc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=10mh , r g =25 , i as =1.6a. 3.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2 this product has been qualified for consumer market. applications or uses as criterial component in life support AP02N70EJ
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP02N70EJ 0 0 1 1 2 2 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 0 1 1 2 2 2 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( : ) normalized r ds(on) i d =0.8a v g =10v 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 tj , junction temperature ( : ) normalized bv dss (v) 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( : ) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP02N70EJ 0 2 4 6 8 10 12 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =0.8a v ds =560v 10 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 10v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
min nom max original original original a 2.10 2.30 2.50 a1 0.60 1.20 1.80 b1 0.40 0.60 0.80 b2 0.60 0.95 1.25 c 0.40 0.50 0.65 c1 0.40 0.55 0.70 d 6.00 6.50 7.00 d1 4.80 5.40 5.90 e1 5.00 5.50 6.00 e2 1.20 1.70 2.20 e ---- 2.30 ---- f 7.00 --- 16.70 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-251 advanced power electronics corp. millimeters symbols 02n70e j ywwsss part numbe r package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y last digit of the year ww week sss sequence logo
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