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| to-25 2 -2l plastic-encapsulate transistors 3DA752 transistor (npn) features power d issipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector power dissipation 1.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =40v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =2v,i c =500ma 100 400 v ce(sat)1 i c =2a,i b =0.2a 0.8 v collector-emitter saturation voltage v ce(sat)2 i c =1.5a,i b =30ma 2 v transition frequency f t v ce =5v,i c =500ma 120 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 13 pf classification of h fe rank o y g range 100-200 160-320 200-400 marking to-25 2 -2l 1.base 2.collector 3.emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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