absolute maximum ratings, according to iec publication no. 134 rms on- state current (full sine wave) it(rms) parameter conditions value unit symbol itsm i2t igm p g(av) tj tstg all conduction angle, t c = 80 c 1000 di/dt itsm tsld 260 may - 10 ft4016.p peak gate current non- repetitive on-state current fusing current average gate power dissipation critical rate of rise of on-state current operating temperature storage temperature non- repetitive on-state current soldering temperature 10s max c full cycle, 60 hz (t = 16.7 ms) full cycle, 50 hz (t = 20 ms) tp = 10 ms, half cycle 20 s max. t j = 125 c tj = 125 c ig = 2x igt , tr 100ns f = 120 hz, t j = 125 c 8 40 420 400 1 50 (-40 +125) (-40 +150) a a a w a2s a a/s c c this series of triac s uses a high performance pnpn technology. these parts are intended for general purpose ac switching applications with highly inductive loads. the ft.... p series provides an isolated tab (rated at 2500 vrms). insulated to3p repetitive peak off state voltage parameter voltage unit symbol 600 vdrm/vrrm 800 m n v 1 3 2 t1 (1) g (3) _ t2 (2) insulated high commutation triac off-state voltage 600 v 8 00 v on- state current 40 amp gate trigger current 50 ma (16) * standard current triac * low thermal resistance with clip bounding * low thermal resistance isolation ceramic for ft....p
fagor triac current case voltage sensitivity f t 40 16 m p 00 forming tu packaging part number information may - 10 ft4016.p electrical characteristics (1) minimum i gt is guaranted at 5% of igt max. (2) for either polarity of electrode mt2 voltage with reference to electrode mt1. parameter conditions sensitivity unit symbol vd = 12 vdc , rl = 33w, quadrant ma max igt (1) q1q3 gate trigger current vd = 12 vdc , rl = 33w , q1q3 vgt gate trigger voltage vgd gate non trigger voltage off-state leakage current idrm/irrm ih (2) vd = vdrm, tj = 125 c tj = 25 c vr = vrrm, it =100 ma,gate open, vd = vdrm , rl = 3.3 kw, latching current ig = 1.2 i gt, tj = 25 c dv/dt (2) critical rate of voltage rise rth(j-c) thermal resistance tj = 125 c vd = 0.67 x vdrm , gate open for ac 360 conduction angle junction-case holding current vtm (2) on- state voltage itm = 60 amp, tp = 380 s, tj = 25 c il c/w max max max a ma v q2 min v/s q1, q3 q1q3 ma max max max min max ma ma v v tj = 125 c tj = 25 c tj = 25 c 16 50 1.3 0.2 80 80 500 160 1.55 5 20 0.9 tj = 25 c insulated high commutation triac rd (2) dynamic resistance vt (o) (2) threshold voltage tj = 125 c tj = 125 c max max mw v 0.85 10
it(rms)(a) fig. 2: rms on-state current versus case temperature (full cycle). fig. 3: on-state characteristics (maximum values) 400 itm (a) 0.5 1.0 1.5 2.0 2.5 3.0 vtm (v) 3.5 4.0 4.5 tp(ms) fig. 1: maximum power dissipation versus rms on- state current (full cycle). p (w) it(rms)(a) 0 10 20 30 40 50 0 0 20 30 10 0 100 25 125 50 75 0.01 0.10 1.00 10.00 100 may - 10 ft4016.p insulated high commutation triac 10 20 30 40 10 1 3000 40 1000 5 15 25 35 45 tj = 25 c tj max 15 25 5 35 tc(c) 100 5.0 repetitive tc = 70 c number of cycles fig. 4: surge peak on-state current versus number of cycles i tsm(a) non repetitive tj initial = 25 c t=20ms one cycle 1 10 100 1000 0 50 200 300 150 100 250 350 400 450 fig. 5: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of i 2t. itsm (a). i2t (a2s) 20 40 60 80 100 120 140 0 0.5 2.0 1.0 1.5 2.5 i gt,ih,il[tj]/i gt,ih,il.[tj=25oc] tj(oc) -40 -20 0 fig. 7: relative variation of gate trigger current, holding current and latching versus junction temperature (typical values) tj initial = 25 c i2t itsm igt ih&il a =180
may - 10 ft4016.p insulated high commutation triac mounting torque 1 n.m (*) limiting values and life support applications, see web page. package mechanical data: insulated to3p a b c d e f g h j k l m n max typ min 4.6 1.55 15.6 0.7 2.9 16.5 21.1 15.5 5.65 3.65 4.17 1.40 4.60 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 dimensions (mm) j c a b h n k f g e j d l m
|
