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unclassified draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra 1. general description the TEF6621 is an am/fm radio including phase-locked loop (pll) tuning system. the system is designed in such a way, that it can be used as a world-wide tuner covering common fm and am bands for radio reception. all functions are controlled by the i 2 c-bus. besides the basic feature set it provides a good weak signal processing function. 2. features n fm tuner for japan, europe and us reception n am tuner for long wave (lw) and medium wave (mw) reception n integrated am radio frequency (rf) selectivity n integrated pll tuning system; controlled via i 2 c-bus n fully integrated local oscillator (lo) n no alignment needed n very easy application on the main board n no critical rf components n fully integrated intermediate frequency (if) ?lters and fm stereo decoder n fully integrated fm noise blanker n field strength (level), multipath [wideband am (wam)] and noise [ultrasonic noise (usn)] dependent stereo blend n field strength (level), multipath (wam) and noise (usn) dependent high-cut control (hcc) n field strength (level), multipath (wam) and noise (usn) dependent soft mute n single power supply TEF6621 tuner on main-board ic rev. 01.04 7 august 2008 objective data sheet free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 2 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 3. quick reference data 4. ordering information table 1. quick reference data symbol parameter conditions min typ max unit v cc supply voltage on pins v cc1 and v cc2 8 8.5 9 v i cc supply current into pins v cc1 , v cc2 and vregsup fm 90 120 140 ma am 100 134 150 ma fm path f rf rf frequency fm tuning range 76 - 108 mhz v i(sens) input sensitivity voltage (s+n)/n = 26 db; including weak signal handling -5-db m v (s+n)/n signal plus noise-to-noise ratio v i(rf) = 1 mv; d f = 22.5 khz 55 60 - db thd total harmonic distortion mono; d f = 75 khz; v i(rf) =1mv - 0.4 0.8 % a image image rejection f rf(image) = f rf(wanted) 2 f if 45 60 - db a cs channel separation v i(rf) = 1 mv; data byte fh bits chsep[2:0] = 100 26 40 - db am path f rf rf frequency am (lw) tuning range 144 - 288 khz am (mw) tuning range 522 - 1710 khz v i(sens) input sensitivity voltage s/n = 26 db; data byte 3h bits demp[1:0] = 10 mw - 34 - db m v lw - 40 - db m v (s+n)/n signal plus noise-to-noise ratio v i(rf) =10mv 50 56 - db thd total harmonic distortion v i(rf) =1mv; m=80% - 0.7 1 % a image image rejection f rf(image) = f rf(wanted) 2 f if 40 55 - db table 2. ordering information type number package name description version TEF6621t so32 plastic small outline package; 32 leads; body width 7.5 mm sot287-1 free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 3 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 5. block diagram fig 1. block diagram of TEF6621t 008aaa134 17 gndd am tuner fm tuner output TEF6621t pll tuning system power supply i 2 c-bus stereo decoder high cut soft mute fm noise blanker signal improvement control 18 scl 19 sda 20 vref 21 vregsup 22 v cc1 23 gnd 29 amselin2 28 amselin1 27 test 30 amifagc1 31 amselout1 32 amrfin 1 amrfdec 2 gndrf 5 v cc2 6 amrfagc 7 amifagc2 11 mpxin 12 mpxout 13 rssi 14 xtal2 15 xtal1 16 amselout2 24 vcodec 25 pll 26 pllref gndaud 10 rout 9 lout 8 fmin1 4 fmin2 3 free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 4 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 6. pinning information 6.1 pinning 6.2 pin description fig 2. pin con?guration TEF6621t amrfin amselout2 amrfdec amselout1 fmin2 amifagc1 fmin1 amselin2 gndrf amselin1 v cc2 test amrfagc pllref lout pll rout vcodec gndaud gnd amifagc2 v cc1 mpxin vregsup mpxout vref rssi sda xtal2 scl xtal1 gndd 008aaa135 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27 table 3. pin description symbol pin description amrfin 1 am rf single-ended input amrfdec 2 am rf decoupling fmin2 3 fm rf differential input 2 fmin1 4 fm rf differential input 1 gndrf 5 rf ground v cc2 6 supply voltage 2 amrfagc 7 am rf automatic gain control (agc) lout 8 audio left output rout 9 audio right output gndaud 10 audio ground amifagc2 11 am if agc 2 mpxin 12 fm multiplex (mpx) and am audio input to stereo decoder mpxout 13 fm mpx and am audio output from tuner part rssi 14 received signal strength indication (rssi) xtal2 15 4 mhz crystal oscillator pin 2 xtal1 16 4 mhz crystal oscillator pin 1 gndd 17 digital ground scl 18 i 2 c-bus clock input free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 5 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 7. functional description 7.1 fm tuner the rf input signal is mixed to a low if with inherent image suppression. the if signal is ?ltered and demodulated. the complete signal path is fully integrated. 7.2 am tuner the rf signal is ?ltered and mixed to a low if with inherent image suppression. the if signals are ?ltered and demodulated. the signal path is highly integrated. 7.3 pll tuning system the pll tuning system includes a fully integrated vco. to avoid problems with unwanted signals on image side, the receiver controls automatically high-side or low-side injection. 7.4 fm stereo decoder the mpx signal from the fm tuner is translated by the stereo decoder into a left and right audio channel. good channel separation is achieved without alignment. 7.5 weak signal processing and noise blanker the reception quality of the station received is measured by a combination of detectors: ?eld strength (level), multipath (wam) and noise (usn). the audio processing functions soft mute, hcc and stereo blend are controlled accordingly to maintain the best possible audio quality in case of poor signal conditions. audio disturbances like e.g. ignition noise are suppressed by the noise blanker circuit, using usn detection on mpx and spike detection on the level signal. sda 19 i 2 c-bus data input and output vref 20 reference voltage decoupling vregsup 21 supply voltage internal voltage regulators v cc1 22 supply voltage 1 gnd 23 ground vcodec 24 decoupling for voltage-controlled oscillator (vco) supply voltage pll 25 pll tuning voltage pllref 26 pll reference voltage test 27 test pin; leave open in normal operation amselin1 28 am selectivity input 1 amselin2 29 am selectivity input 2 amifagc1 30 am if agc 1 amselout1 31 am selectivity output 1 amselout2 32 am selectivity output 2 table 3. pin description continued symbol pin description free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 39 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 9. limiting values [1] class 2 according to jesd22-a114. [2] class b according to eia/jesd22-a115. 10. thermal characteristics [1] the thermal resistance depends strongly on the pcb design. an application different to figure 28 must ensure that the thermal resistance is below 54 k/w to avoid violation of the maximum junction temperature; see t ab le 57 . table 57. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage on pins v cc1 and v cc2 - 0.3 +10 v d v ccn voltage difference between any supply pins between pins v cc1 and v cc2 - 0.3 +0.3 v v scl voltage on pin scl - 0.3 +6 v v sda voltage on pin sda - 0.3 +6 v v amrfdec voltage on pin amrfdec - 0.3 +6 v v amrfin voltage on pin amrfin - 0.3 +6 v v amrfagc voltage on pin amrfagc - 0.3 +6 v v amifagc2 voltage on pin amifagc2 - 0.3 +6 v v rssi rssi voltage - 0.3 +6 v v vcodec voltage on pin vcodec - 0.3 +6 v v pll voltage on pin pll - 0.3 +6 v v pllref voltage on pin pllref - 0.3 +6 v v test voltage on pin test - 0.3 +6 v v amifagc1 voltage on pin amifagc1 - 0.3 +6 v v vref voltage on pin vref - 0.3 +6 v v n voltage on any other pin - 0.3 +v cc v t stg storage temperature - 40 +150 c t amb ambient temperature - 20 +85 c t j junction temperature - 150 c v esd electrostatic discharge voltage human body model [1] - 2000 +2000 v machine model [2] - 200 +200 v table 58. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air; single layer board with a copper thickness of 35 m m; see figure 28 [1] 48 k/w y j-top thermal characterization parameter from junction to top of package 4.5 k/w free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 40 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 11. static characteristics [1] sda and scl high and low internal thresholds are speci?ed according to an i 2 c-bus voltage of 2.5 v 10 % or 3.3 v 5 %. the i 2 c-bus interface tolerates also sda and scl signals from a 5 v i 2 c-bus, but does not ful?ll the 5 v i 2 c-bus speci?cation completely. the TEF6621 complies with the fast-mode i 2 c-bus protocol. the maximum i 2 c-bus communication speed is 400 kbit/s. 12. dynamic characteristics table 59. static characteristics v cc = 8.5 v; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit v cc supply voltage on pins v cc1 and v cc2 8 8.5 9 v i cc supply current into pins v cc1 , v cc2 and vregsup fm 90 120 140 ma am 100 134 150 ma v vregsup voltage on pin vregsup t amb = - 20 c to +85 c 6.35 - - v power-on reset v p(por) power-on reset supply voltage reset at power-on 6.5 6.75 7.0 v v hys(por) power-on reset hysteresis voltage - 0.2 - v t start start time series resistance of crystal r s = 150 w - 10 100 ms logic pins sda and scl (voltage referenced to pin gndd) v ih high-level input voltage [1] 1.58 - 5.5 v v il low-level input voltage [1] - 0.5 - +1.04 v table 60. dynamic characteristics v cc = 8.5 v; t amb =25 c; unless otherwise speci?ed. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise speci?ed. am condition: all rf voltages are rms values measured at the input of a 15 pf/60 pf dummy aerial; f mod = 400 hz, m = 30 %, f rf = 990 khz; unless otherwise speci?ed. all values measured in a test circuit according to figure 29 ; default settings; audio signals measured at lout and rout with iec tuner ?lter (200 hz to 15 khz; iec 60315-4); unless otherwise speci?ed. symbol parameter conditions min typ max unit crystal oscillator; pins xtal1 and xtal2 f xtal crystal frequency fundamental frequency - 4 - mhz d f xtal /f xtal relative crystal frequency variation device inaccuracy - 45 - +45 10 - 6 c i input capacitance input capacitance from pin xtal1 and pin xtal2 to ground 134 pf r i input resistance - - - 750 w free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 41 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic tuning system c/n lo lo carrier-to-noise ratio f lo = 100 mhz; d f = 10 khz - 98 - dbc/ ? hz t tune tuning time fm (europe/usa/japan) f rf = 87.5 mhz to 108 mhz - 1.8 - ms am (mw) f rf = 0.53 mhz to 1.7 mhz - 9 - ms am (lw) f rf = 0.144 mhz to 0.288 mhz - 3.5 - ms f rf rf frequency fm tuning range 76 - 108 mhz am (lw) tuning range 144 - 288 khz am (mw) tuning range 522 - 1710 khz f tune(step) step of tuning frequency fm (europe/usa/japan) - 50 - khz am (lw and mw) - 1 - khz fm path v i(sens) input sensitivity voltage (s+n)/n = 26 db; without weak signal handling - 5.5 - db m v (s+n)/n = 26 db; including weak signal handling -5- db m v (s+n)/n = 46 db; including weak signal handling -16- db m v nf noise ?gure - 6 9 db (s+n)/n signal plus noise-to-noise ratio v i(rf) =1mv; d f = 22.5 khz 55 60 - db a ripple ripple rejection v ripple /v audio ; v ripple = 100 mv; f ripple = 100 hz 34 44 - db f if if frequency - 150 - khz a image image rejection f rf(image) = f rf(wanted) 2 f if 45 60 - db ip3 third-order intercept point f rf(unw)1 = 97.5 mhz; f rf(unw)2 = 97.9 mhz; v i(rf) =80db m v 106 113 - db m v s dyn dynamic selectivity v i(rf) =10 m v; d f rf(unw) = 22.5 khz; (s+n)/n = 26 db; mono; f af = 1 khz d f rf = 100 khz - 3 - db d f rf = 200 khz - 55 - db s stat static selectivity maximum if bandwidth f i(rf) 100 khz 10 14 25 db f i(rf) 200 khz 54 64 74 db f i(rf) 300 khz (excluding image) 65 75 90 db a sup(am) am suppression am: f af = 1 khz; m = 30 % v i(rf) = 0.05 mv to 20 mv 45 55 - db v i(rf) = 20 mv to 500 mv 40 50 - db table 60. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise speci?ed. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise speci?ed. am condition: all rf voltages are rms values measured at the input of a 15 pf/60 pf dummy aerial; f mod = 400 hz, m = 30 %, f rf = 990 khz; unless otherwise speci?ed. all values measured in a test circuit according to figure 29 ; default settings; audio signals measured at lout and rout with iec tuner ?lter (200 hz to 15 khz; iec 60315-4); unless otherwise speci?ed. symbol parameter conditions min typ max unit free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 42 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic fm front-end; pins fmin1 and fmin2 r i(dif) differential input resistance f rf = 97.1 mhz; maximum gain 200 300 400 w c i(dif) differential input capacitance f rf = 97.1 mhz - 4 7 pf fm rf agc v start(agc) agc start voltage rf input voltage for ?rst agc step; v i(rf) value, at which the rf gain decreases by 6 db with increasing v i(rf) ; data byte 2h bits rfagc[1:0] = 00 83 86 89 db m v bits rfagc[1:0] = 01 81 84 87 db m v bits rfagc[1:0] = 10 79 82 85 db m v bits rfagc[1:0] = 11 77 80 83 db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 - 5 db fm if agc v i(rf)agc agc rf input voltage v i(rf) value, at which the if gain decreases by 6 db with increasing v i(rf) ; start of agc; ?rst step 71 76 81 db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 - 6 db fm rssi; pin rssi v rssi rssi voltage v i(rf) = - 20 db m v 0.6 0.8 1.0 v v i(rf) =20db m v 1.6 1.9 2.2 v v i(rf) =40db m v 2.5 2.9 3.3 v d v rssi / d l i(rf) rssi voltage difference to rf input level difference ratio between v i(rf) =20db m v and v i(rf) =40db m v 45 50 55 mv/db fm if counter f ifc(res) if counter frequency resolution - 5 - khz fm demodulator; pin mpxout r o output resistance - - 100 w r l load resistance 5 - - k w c l load capacitance - - 20 pf d f max maximum frequency deviation thd = 3 %; v i(rf) = 10 mv 115 140 - khz v o output voltage d f = 22.5 khz; f af = 1 khz 180 230 300 mv table 60. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise speci?ed. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise speci?ed. am condition: all rf voltages are rms values measured at the input of a 15 pf/60 pf dummy aerial; f mod = 400 hz, m = 30 %, f rf = 990 khz; unless otherwise speci?ed. all values measured in a test circuit according to figure 29 ; default settings; audio signals measured at lout and rout with iec tuner ?lter (200 hz to 15 khz; iec 60315-4); unless otherwise speci?ed. symbol parameter conditions min typ max unit free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 43 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic audio part; pin mpxin r i input resistance data byte 3h bit locut = 0 (fm or am) - 220 - k w data byte 3h bit locut = 1 (am) - 16 - k w a bal(ch) channel balance balance between r and l channel - 1 - +1 db a sup(pilot) pilot suppression 9 % pilot; f pilot = 19 khz; referenced to 91 % fm modulation 30 40 - db m pilot modulation degree of pilot tone threshold for pilot detection stereo on 2 3.9 5.8 % stereo off 1.2 3.1 5 % a hys(pilot) pilot hysteresis 0.7 0.8 1.6 % t det(pilot) pilot detection time - 30 100 ms audio output; pins lout and rout v o output voltage d f = 22.5 khz; f af = 1 khz data byte 3h bit outa = 1 200 290 410 mv data byte 3h bit outa = 0 80 120 175 mv a af af attenuation mono; pre-emphasis = 50 m s; referenced to f af = 1 khz f af =50hz - 0.6 - 0.1 +0.4 db f af =15khz - 1.5 0 +1.5 db a cs channel separation v i(rf) = 1 mv; data byte fh bits chsep[2:0] = 100 26 40 - db thd total harmonic distortion mono; d f = 75 khz; v i(rf) = 1 mv - 0.4 0.8 % stereo; d f = 67.5 khz; l or r - - 1 % r l load resistance 10 - - k w c l load capacitance - - 20 pf fm noise blanker (s+n)/n signal plus noise-to-noise ratio noise pulses at rf input signal t p = 5 ns; t r < 1 ns; t f < 1 ns; f p = 100 hz; v p = 500 mv; v i(rf) =40db m v; quasi peak; audio ?lter according itu-r bs.468-4 -30- db am path v i(sens) input sensitivity voltage s/n = 26 db; data byte 3h bits demp[1:0] = 10 mw - 34 - db m v lw - 40 - db m v v n(i)(eq) equivalent input noise voltage c source = 100 pf - 1 - nv/ ? hz table 60. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise speci?ed. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise speci?ed. am condition: all rf voltages are rms values measured at the input of a 15 pf/60 pf dummy aerial; f mod = 400 hz, m = 30 %, f rf = 990 khz; unless otherwise speci?ed. all values measured in a test circuit according to figure 29 ; default settings; audio signals measured at lout and rout with iec tuner ?lter (200 hz to 15 khz; iec 60315-4); unless otherwise speci?ed. symbol parameter conditions min typ max unit free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 44 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic (s+n)/n signal plus noise-to-noise ratio v i(rf) =10mv 50 56 - db f if if frequency - 25 - khz a image image rejection f rf(image) = f rf(wanted) 2 f if 40 55 - db b ?tr(if) if ?lter bandwidth - 3 db bandwidth 5 6.5 8 khz s stat static selectivity f tune 10 khz 40 48 - db f tune 20 khz 65 78 - db v i(rf)(max) maximum rf input voltage thd = 10 %; m = 80 %; active antenna 50 w 120 135 - db m v ip2 second-order intercept point 150 170 - db m v ip3 third-order intercept point d f = 40 khz 116 127 - db m v am lna and am rf agc; input pins amrfin and amrfdec r i input resistance f rf = 990 khz - 20 - w c i input capacitance agc maximum gain [1] [2] - 530 - pf mw band with passive antenna (measured with dummy aerial 15 pf/60 pf) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ;m=0%; start of agc; ?rst step 110 113 116 db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 4 7 db mw band with active antenna (measured with dummy aerial 50 w ) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ;m=0%; start of agc; ?rst step 78 81 84 db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 3 6 db lw band with passive antenna (measured with dummy aerial 15 pf/60 pf) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; f rf = 207 khz; m = 0 %; start of agc; ?rst step - 104 - db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 4 7 db table 60. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise speci?ed. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise speci?ed. am condition: all rf voltages are rms values measured at the input of a 15 pf/60 pf dummy aerial; f mod = 400 hz, m = 30 %, f rf = 990 khz; unless otherwise speci?ed. all values measured in a test circuit according to figure 29 ; default settings; audio signals measured at lout and rout with iec tuner ?lter (200 hz to 15 khz; iec 60315-4); unless otherwise speci?ed. symbol parameter conditions min typ max unit free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 45 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic lw band with active antenna (measured with dummy aerial 50 w ) v i(rf)agc agc rf input voltage switched lna agc: v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; f rf = 207 khz; m = 0 %; start of agc; ?rst step -80- db m v v i(rf)agc(hys) hysteresis of agc rf input voltage hysteresis of agc start 1 4 7 db continuous am rf agc v i(rf)agc agc rf input voltage linear rf agc: v i(rf) at which agc starts; m = 0 % data byte 2h bits rfagc[1:0] = 00 87 90 93 db m v data byte 2h bits rfagc[1:0] = 01 85 88 91 db m v data byte 2h bits rfagc[1:0] = 10 83 86 89 db m v data byte 2h bits rfagc[1:0] = 11 81 84 87 db m v t s settling time v i(rf) =10mvto600mv - 64 - ms v i(rf) = 600 mv to 10 mv - 3.2 - s i source(agc) agc source current agc attack; v i(rf)m = 105 db m v (peak); normal mode 25 35 50 m a agc attack; fast mode after tuning and agc switching 0.7 1 1.4 ma i sink(agc) agc sink current agc release; normal mode 0.7 1 1.4 m a agc release; fast mode after tuning and agc switching 17.5 25 35 m a continuous if agc 1 v i(rf)agc agc rf input voltage linear if agc 1: v i(rf) at which agc starts; m = 0 % 59 62 65 db m v i source(agc) agc source current agc attack; v i(rf)m =80db m v (peak); normal mode 35 50 70 m a agc attack; fast mode after tuning and agc switching 0.875 1.25 1.75 ma i sink(agc) agc sink current agc release; normal mode 0.7 1 1.4 m a agc release; fast mode after tuning and agc switching 17.5 25 35 m a continuous if agc 2 v i(rf)agc agc rf input voltage linear if agc 2: v i(rf) at which agc starts; m = 0 % 19 22 25 db m v i source(agc) agc source current agc attack; v i(rf)m =50db m v (peak); normal mode 468 m a agc attack; fast mode after tuning and agc switching 100 150 200 m a table 60. dynamic characteristics continued v cc = 8.5 v; t amb =25 c; unless otherwise speci?ed. fm condition: all rf voltages refer to an unterminated rms voltage with a source impedance 75 w ; f mod = 1 khz, d f = 22.5 khz, de-emphasis = 50 m s, f rf = 97.1 mhz; unless otherwise speci?ed. am condition: all rf voltages are rms values measured at the input of a 15 pf/60 pf dummy aerial; f mod = 400 hz, m = 30 %, f rf = 990 khz; unless otherwise speci?ed. all values measured in a test circuit according to figure 29 ; default settings; audio signals measured at lout and rout with iec tuner ?lter (200 hz to 15 khz; iec 60315-4); unless otherwise speci?ed. symbol parameter conditions min typ max unit free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 46 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic [1] the switched input capacitance is part of the switched rf agc function. [2] the input impedance of the am lna depends on the agc state. i sink(agc) agc sink current agc release; normal mode 0.7 1 1.4 m a agc release; fast mode after tuning and agc switching 17.5 25 35 m a am demodulator; pin mpxout v o output voltage m = 30 % 175 210 250 mv audio output; pins lout and rout v o output voltage m = 30 %; f af = 400 hz; data byte 3h bits demp[1:0] = 10 data byte 3h bit outa = 1 200 270 355 mv data byte 3h bit outa = 0 85 115 150 mv a af af attenuation referenced to f af = 400 hz; 210 mv input at pin mpxin f af = 100 hz; data byte 3h bit locut = 1 - 4.5 - 3 - 1.5 db f af = 1.5 khz; data byte 3h bits demp[1:0] = 10 - 4.5 - 3 - 2db f af = 5 khz; data byte 3h bits demp[1:0] = 10 - 24 - 21 - 18 db thd total harmonic distortion v i(rf) =1mv; m=80% - 0.7 1 % a ripple ripple rejection v ripple /v audio ; v ripple = 100 mv; f ripple = 100 hz 30 37 - db am rssi; pin rssi v rssi rssi voltage v i(rf) = - 20 db m v at dummy aerial input 0.9 1.1 1.25 v v i(rf) =14db m v at dummy aerial input 1.6 1.9 2.2 v v i(rf) =34db m v at dummy aerial input 2.6 2.9 3.2 v d v rssi / d l i(rf) rssi voltage difference to rf input level difference ratio 5 m v draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 47 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 13. application information for list of components see t ab le 61 and for crystal speci?cation see t ab le 62 . fig 27. application diagram of TEF6621t 008aaa136 100 nf 1 m f 100 nf 10 nf 10 nf 10 nf 15 pf 1 nf 15 pf 1 nf 220 nf 1 m f 1 m f 220 nf 1 m f 100 nf x1 4 mhz 22 w 100 w 4.7 k w 1 m w 470 k w 3.3 m h 1 m f rssi scl sda test v cc v p 17 am tuner fm tuner primary inductance: 71 nh ratio prim./sec.: 2.25/5 output TEF6621t 560 m h 1.8 m h t1 560 m h pll tuning system power supply i 2 c-bus stereo decoder high cut soft mute fm noise blanker signal improvement control 18 19 20 21 22 23 29 28 27 30 31 32 1 2 5 6 7 11 12 13 14 15 16 24 25 26 10 9 8 r l 4 3 10 nf 100 nf 33 pf 1 nf c1 free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 48 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 13.1 printed-circuit board fig 28. printed-circuit board layout, suggested for application (this layout has been used in the nxp gh989 reference design, 35 m m) 001aah342 110 mm 130 mm free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 49 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 14. test information for list of components see t ab le 61 and for crystal speci?cation see t ab le 62 . fig 29. test circuit of TEF6621t 008aaa137 100 nf 1 m f 100 nf 10 nf 10 nf 10 nf 15 pf 1 nf 15 pf 1 nf 5.6 pf 220 nf 1 m f 1 m f 220 nf 1 m f 100 nf x1 4 mhz 22 w 82 w 4.7 k w 1 m w 10 k w 470 k w 3.3 m h rssi scl sda test v p 17 am tuner fm tuner output TEF6621t 560 m h 1.8 m h 470 nh l2 215 nh l1 290 nh 560 m h pll tuning system power supply i 2 c-bus stereo decoder high cut soft mute fm noise blanker signal improvement control 18 19 20 21 22 23 29 28 27 30 31 32 1 2 5 6 7 11 12 13 14 15 16 24 25 26 10 9 8 r l 4 3 10 nf 100 nf 22 pf 20 pf 10 k w 20 pf 10 k w 20 pf 22 pf 1 nf 1 m w 100 nf d1 bav99 1 m f v cc c1 free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 50 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic table 61. list of components for figure 27 and figure 29 symbol component type manufacturer c1 decoupling capacitor 1 m f; x7r 0805 any d1 esd protection diode bav99 nxp semiconductors l1 fm rf input 1 290 nh; lqh31hnr29k03l murata l2 fm rf input 2 215 nh; lqh31hnr21k01l murata t1 transformer #p600ens-10959qh toko x1 crystal 4 mhz ln-g102-1413 ndk table 62. 4 mhz crystal speci?cation for figure 27 and figure 29 symbol parameter conditions min typ max unit f xtal crystal frequency fundamental frequency - 4.000 - mhz c l load capacitance - 18 - pf c shunt shunt capacitance - - 7 pf c 1 motional capacitance - 10 - ff r s series resistance - - 150 w d f xtal /f xtal relative crystal frequency variation at 25 c - 25 - +25 10 - 6 caused by ageing - 5 - +5 10 - 6 caused by temperature - 30 - +30 10 - 6 t amb ambient temperature - 20 - +85 c free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 51 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic table 63. dc operating points v cc2 = 8.5 v; v cc1 = 8.5 v; v i(rf) =0 m v; audio output gain low; unless otherwise speci?ed. symbol pin unloaded dc voltage (v) am mode fm mode min typ max min typ max amrfin 1 - 2.85 - - - - amrfdec 2 - 4.1 - - - - fmin2 3 - - - - 3.1 - fmin1 4 - - - - 3.1 - gndrf 5 external gnd external gnd v cc2 6 external 8.5 external 8.5 amrfagc 7 - 1.8 - - - - lout 8 - 3.8 - - 3.8 - rout 9 - 3.8 - - 3.8 - gndaud 10 external gnd external gnd amifagc2 11 - - - - - - mpxin 12 - 3.7 - - 3.7 - mpxout 13 - 4 - - 4 - rssi 14 - 1.2 - - 0.8 - xtal2 15 - 6.5 - - 6.5 - xtal1 16 - 6.5 - - 6.5 - gndd 17 external gnd external gnd scl 18 external i 2 c-bus voltage external i 2 c-bus voltage sda 19 external i 2 c-bus voltage external i 2 c-bus voltage vref 20 3.9 4.0 4.1 3.9 4.0 4.1 vregsup 21 5.6 6.5 7 5.6 6.5 7 v cc1 22 external 8.5 external 8.5 gnd 23 external gnd external gnd vcodec 24 - 5.7 - - 5.7 - pll 25 1.2 - 5.5 1.2 - 5.5 pllref 26 - 2.25 - - 2.25 - test 27 - - - - - - amselin1 28 1.2 1.55 1.9 - - - amselin2 29 1.2 1.55 1.9 - - - amifagc1 30 - 5.5 - - - - amselout1 31 6.5 6.8 7.15 - - - amselout2 32 6.5 6.8 7.15 - - - free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 52 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 15. package outline fig 30. package outline sot287-1 (so32) unit a max. a 1 a 2 a 3 b p cd (1) e (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec jeita mm inches 2.65 0.1 0.25 0.01 1.4 0.055 0.3 0.1 2.45 2.25 0.49 0.36 0.27 0.18 20.7 20.3 7.6 7.4 1.27 10.65 10.00 1.2 1.0 0.95 0.55 8 0 o o 0.25 0.1 0.004 0.25 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.1 0.4 sot287-1 mo-119 (1) 0.012 0.004 0.096 0.089 0.02 0.01 0.05 0.047 0.039 0.419 0.394 0.30 0.29 0.81 0.80 0.011 0.007 0.037 0.022 0.01 0.01 0.043 0.016 w m b p d h e z e c v m a x a y 32 17 16 1 q a a 1 a 2 l p q detail x l (a ) 3 e pin 1 index 0 5 10 mm scale so32: plastic small outline package; 32 leads; body width 7.5 mm sot287-1 00-08-17 03-02-19 free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 53 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 16. soldering of smd packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 surface mount re?ow soldering description . 16.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electrical circuits. the soldered joint provides both the mechanical and the electrical connection. there is no single soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for ?ne pitch smds. re?ow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 16.2 wave and re?ow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. the re?ow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature pro?le. leaded packages, packages with solder balls, and leadless packages are all re?ow solderable. key characteristics in both wave and re?ow soldering are: ? board speci?cations, including the board ?nish, solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivity level of the packages ? package placement ? inspection and repair ? lead-free soldering versus snpb soldering 16.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhesive and ?ux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath speci?cations, including temperature and impurities free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 54 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 16.4 re?ow soldering key characteristics in re?ow soldering are: ? lead-free versus snpb soldering; note that a lead-free re?ow process usually leads to higher minimum peak temperatures (see figure 31 ) than a snpb process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? re?ow temperature pro?le; this pro?le includes preheat, re?ow (in which the board is heated to the peak temperature) and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classi?ed in accordance with t ab le 64 and 65 moisture sensitivity precautions, as indicated on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during re?ow soldering, see figure 31 . table 64. snpb eutectic process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 3 350 < 2.5 235 220 3 2.5 220 220 table 65. lead-free process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 55 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic for further information on temperature pro?les, refer to application note an10365 surface mount re?ow soldering description . 17. abbreviations msl: moisture sensitivity level fig 31. temperature pro?les for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature table 66. abbreviations acronym description agc automatic gain control hcc high-cut control i 2 c-bus inter ic bus if intermediate frequency lo local oscillator lw long wave mpx multiplex mw medium wave pll phase-locked loop rf radio frequency rssi received signal strength indication usn ultrasonic noise vco voltage-controlled oscillator wam wideband am free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 56 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 18. revision history table 67. revision history document id release date data sheet status change notice supersedes TEF6621_1 yyyymmdd objective data sheet - - free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra TEF6621_1 ? nxp b.v. 2008. all rights reserved. objective data sheet rev. 01.04 7 august 2008 57 of 58 unclassified nxp semiconductors TEF6621 tuner on main-board ic 19. legal information 19.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 19.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 19.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 19.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. i 2 c-bus logo is a trademark of nxp b.v. 20. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. free datasheet http:///
draft draft draft dr draft draft draft draf draft draft draft draft draft d draft draft draft draft draft draft dra unclassified nxp semiconductors TEF6621 tuner on main-board ic ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 7 august 2008 document identifier: TEF6621_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 21. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 functional description . . . . . . . . . . . . . . . . . . . 5 7.1 fm tuner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2 am tuner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.3 pll tuning system . . . . . . . . . . . . . . . . . . . . . . 5 7.4 fm stereo decoder . . . . . . . . . . . . . . . . . . . . . . 5 7.5 weak signal processing and noise blanker. . . . 5 7.6 i 2 c-bus transceiver . . . . . . . . . . . . . . . . . . . . . . 6 8i 2 c-bus protocol . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1.1 read mode: data byte status . . . . . . . . . . . . 7 8.1.2 read mode: data byte level . . . . . . . . . . . . . 7 8.1.3 read mode: data byte usn_wam . . . . . . . . . . 8 8.1.4 read mode: data byte ifcounter . . . . . . . . 8 8.2 write mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.2.1 mode and subaddress byte for write. . . . . . . . 10 8.2.2 write mode: data byte tuner0 . . . . . . . . . . . 22 8.2.3 write mode: data byte tuner1 . . . . . . . . . . . 22 8.2.4 write mode: data byte tuner2 . . . . . . . . . . . 23 8.2.5 write mode: data byte radio . . . . . . . . . . . . 24 8.2.6 write mode: data byte softmute0 . . . . . . . 24 8.2.7 write mode: data byte softmute1 . . . . . . . 25 8.2.8 write mode: data byte softmute2_fm. . . . 27 8.2.9 write mode: data byte softmute2_am . . . 29 8.2.10 write mode: data byte highcut0 . . . . . . . . . 29 8.2.11 write mode: data byte highcut1 . . . . . . . . . 30 8.2.12 write mode: data byte highcut2 . . . . . . . . . 32 8.2.13 write mode: data byte stereo0. . . . . . . . . . 34 8.2.14 write mode: data byte stereo1. . . . . . . . . . 34 8.2.15 write mode: data byte stereo2. . . . . . . . . . 36 8.2.16 write mode: data byte control . . . . . . . . . 37 8.2.17 write mode: data byte level_offset . . . . 38 8.2.18 write mode: data byte am_lna . . . . . . . . . . . 38 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 39 10 thermal characteristics. . . . . . . . . . . . . . . . . . 39 11 static characteristics. . . . . . . . . . . . . . . . . . . . 40 12 dynamic characteristics . . . . . . . . . . . . . . . . . 40 13 application information. . . . . . . . . . . . . . . . . . 47 13.1 printed-circuit board . . . . . . . . . . . . . . . . . . . . 48 14 test information. . . . . . . . . . . . . . . . . . . . . . . . 49 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 52 16 soldering of smd packages . . . . . . . . . . . . . . 53 16.1 introduction to soldering. . . . . . . . . . . . . . . . . 53 16.2 wave and re?ow soldering . . . . . . . . . . . . . . . 53 16.3 wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 53 16.4 re?ow soldering. . . . . . . . . . . . . . . . . . . . . . . 54 17 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 55 18 revision history . . . . . . . . . . . . . . . . . . . . . . . 56 19 legal information . . . . . . . . . . . . . . . . . . . . . . 57 19.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 57 19.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 19.3 disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 57 19.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 57 20 contact information . . . . . . . . . . . . . . . . . . . . 57 21 contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 free datasheet http:///

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