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1/11 november 2003 stp20nm50fd STF20NM50D - stb20nm50fd n-channel 500v - 0.22 w - 20a to-220/to-220fp/d 2 pak fdmesh? power mosfet (with fast diode) n typical r ds (on) = 0.22 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufacturing yields description the fdmesh? associates all advantages of re- duced on-resistance and fast switching with an in- trinsic fast-recovery body diode. it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. applications n zvs phase-shift full bridge converters for smps and welding equipment ordering information type v dss r ds(on) r ds(on) *q g i d stp20nm50fd STF20NM50D stb20nm50fd 500v 500v 500v <0.25 w <0.25 w <0.25 w 8.36 w *nc 8.36 w *nc 8.36 w *nc 20 a 20 a 20 a sales type marking package packaging stp20nm50fd p20nm50fd to-220 tube STF20NM50D f20nm50d to-220fp tube stb20nm50fd b20nm50fd d 2 pak tape&reel to-220 d 2 pak 1 2 3 1 2 3 to-220fp 1 3 i nternal schematic diagram
stp20nm50fd - STF20NM50D - stb20nm50fd 2/11 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 20a, di/dt 200 a/s, v dd v (br)dss ,t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) on/off symbol parameter value unit stp20nm50fd stb20nm50fd STF20NM50D v ds drain-source voltage (v gs =0) 500 v v dgr drain-gate voltage (r gs =20k w ) 500 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 20 20 (*) a i d drain current (continuous) at t c = 100c 14 14 (*) a i dm ( ) drain current (pulsed) 80 80 (*) a p tot total dissipation at t c =25c 192 45 w derating factor 1.2 0.36 w/c dv/dt (1) peak diode recovery voltage slope 20 v/ns v iso insulation winthstand voltage (dc) -- 2000 v t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c to-220 / d 2 pak to-220fp rthj-case thermal resistance junction-case max 0.65 2.8 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j =25c,i d =i ar ,v dd =35v) 700 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c =125c 10 a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na v gs(th gate threshold voltage v ds =v gs ,i d = 250 a 34 5v r ds(on) static drain-source on resistance v gs =10v,i d = 10a 0.22 0.25 w
3/11 stp20nm50fd - STF20NM50D - stb20nm50fd electrical characteristics (continued) dynamic (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 10a 9s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs = 0 1380 290 40 pf pf pf c oss eq. (2) equivalent output capacitance v gs =0v,v ds = 0v to 400v 130 pf r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20mv open drain 2.8 w symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =250v,i d =10a r g = 4.7 w v gs =10v (see test circuit, figure 3) 22 ns t r rise time 20 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =400v,i d = 20a, v gs =10v 38 18 10 53 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d =20a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 6ns t f fall time 15 ns t c cross-over time 30 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 20 a i sdm (2) source-drain current (pulsed) 80 a v sd (1) forward on voltage i sd =20a,v gs =0 1.5 v t rr reverse recovery time i sd = 20 a, di/dt = 100a/s, v dd =60v,t j = 150c (see test circuit, figure 5) 245 ns q rr reverse recovery charge 2 c i rrm reverse recovery current 16 a
stp20nm50fd - STF20NM50D - stb20nm50fd 4/11 safe operating area for to-220 / i2pak thermal impedance for to-220 / i2pak output characteristics transconductance transfer characteristics static drain-source on resistance
5/11 stp20nm50fd - STF20NM50D - stb20nm50fd capacitance variations gate charge vs gate-source voltage source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
stp20nm50fd - STF20NM50D - stb20nm50fd 6/11 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/11 stp20nm50fd - STF20NM50D - stb20nm50fd dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stp20nm50fd - STF20NM50D - stb20nm50fd 8/11 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
9/11 stp20nm50fd - STF20NM50D - stb20nm50fd 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
stp20nm50fd - STF20NM50D - stb20nm50fd 10/11 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pa k footprin t * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
11/11 stp20nm50fd - STF20NM50D - stb20nm50fd information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com

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