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diode rapidswitchingemittercontrolleddiode IDP08E65D1 emittercontrolleddioderapid1series datasheet industrialpowercontrol
2 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 rapidswitchingemittercontrolleddiode features: ?650vemittercontrolledtechnology ?temperaturestablebehaviourofkeyparameters ?lowforwardvoltage( v f ) ?ultrafastrecovery ?lowreverserecoverycharge( q rr ) ?lowreverserecoverycurrent( i rrm ) ?softnessfactor>1 ?175cjunctionoperatingtemperature ?pb-freeleadplating;rohscompliant applications: ?ac/dcconverters ?boostdiodeinpfcstages ?freewheelingdiodesininvertersandmotordrives ?generalpurposeinverters ?switchmodepowersupplies keyperformanceandpackageparameters type v rrm i f v f , t vj =25c t vjmax marking package IDP08E65D1 650v 8a 1.35v 175c e08ed1 pg-to220-2-1 a c c a c
3 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 a c c a c
4 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit repetitive peak reverse voltage v rrm 650 v diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 16.0 8.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 24.0 a diode surge non repetitive forward current t c =25c, t p =10.0ms,sinehalfwave i fsm 64.0 a powerdissipation t c =25c p tot 56.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic diode thermal resistance, 1) junction - case r th(j-c) 2.69 k/w thermal resistance junction - ambient r th(j-a) 62 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic diode forward voltage v f i f =8.0a t vj =25c t vj =125c t vj =175c - - - 1.35 1.30 1.26 1.70 - - v reverse leakage current i r v r =650v t vj =25c t vj =175c - - - - 40.0 2000.0 a electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic internal emitter inductance measured 5mm (0.197 in.) from case l e - 7.0 - nh 1) please be aware that in non standard load conditions, due to high rth(j-c), tvj close to tvjmax can be reached. a c c a c
5 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 51 - ns diode reverse recovery charge q rr - 0.20 - c diode peak reverse recovery current i rrm - 7.9 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -420 - a/s t vj =25c, v r =400v, i f =8.0a, di f /dt =1000a/s diode reverse recovery time t rr - 80 - ns diode reverse recovery charge q rr - 0.17 - c diode peak reverse recovery current i rrm - 2.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -310 - a/s t vj =25c, v r =400v, i f =8.0a, di f /dt =200a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit diodecharacteristic,at t vj =175c/125c diode reverse recovery time t rr - 81 - ns diode reverse recovery charge q rr - 0.49 - c diode peak reverse recovery current i rrm - 10.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -300 - a/s t vj =175c, v r =400v, i f =8.0a, di f /dt =1000a/s diode reverse recovery time t rr - 110 - ns diode reverse recovery charge q rr - 0.32 - c diode peak reverse recovery current i rrm - 4.7 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -210 - a/s t vj =125c, v r =400v, i f =8.0a, di f /dt =200a/s a c c a c
6 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 figure 2. diodeforwardcurrentasafunctionofcase temperature (t vj 175c) t c ,casetemperature[c] i f ,forwardcurrent[a] 25 50 75 100 125 150 175 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 figure 3. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 1 10 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.054405 1.3e-5 2 0.4186 1.3e-4 3 1.3026 6.5e-4 4 0.83954 4.7e-3 5 0.07293 0.05512947 6 2.1e-3 2.016515 figure 4. typicalreverserecoverytimeasafunctionof diodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 200 600 1000 1400 1800 2200 2600 3000 0 15 30 45 60 75 90 105 120 135 150 t j =25c, i f = 8a t j =125c, i f = 8a t j =175c, i f = 8a a c c a c
7 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 figure 5. typicalreverserecoverychargeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 200 600 1000 1400 1800 2200 2600 3000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 t j =25c, i f = 8a t j =125c, i f = 8a t j =175c, i f = 8a figure 6. typicalpeakreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rrm ,reverserecoverycurrent[a] 200 600 1000 1400 1800 2200 2600 3000 0 2 4 6 8 10 12 14 16 18 20 t j =25c, i f = 8a t j =125c, i f = 8a t j =175c, i f = 8a figure 7. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 200 600 1000 1400 1800 2200 2600 3000 -2000 -1800 -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 t j =25c, i f = 8a t j =125c, i f = 8a t j =175c, i f = 8a figure 8. typicaldiodeforwardcurrentasafunctionof forwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 2 4 6 8 10 12 14 16 t j =25c t j =175c a c c a c
8 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 figure 9. typicaldiodeforwardvoltageasafunctionof junctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 i f =2a i f =4a i f =8a i f =12a i f =16a a c c a c
9 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 a c c a c pg-to220-2-1
10 IDP08E65D1 emittercontrolleddioderapid1series rev.2.2,2013-12-16 a c c a c pg-to220-2-1 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc
11 IDP08E65D1 emitter controlled diode rapid 1 series rev. 2.2, 2013-12-16 revision history IDP08E65D1 previous revision revision date subjects (major changes since last revision) 1.1 2013-03-13 preliminary data sheet 2.1 2013-10-21 final data sheet 2.2 2013-12-16 new marking pattern a c c a c pg-to220-2-1 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc

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