View XC9401_7627514.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1/19 XC9401 series off-line controllers for led lighting input voltage product type isolation / non-isolation topology efficiency power factor 100vac / 110vac XC9401b605mr non-isolation buck 91% 0.6 XC9401b605mr 83% 0.6 220vac / 240vac XC9401a605mr isolation flyback 82% 0.9 220vac / 240vac XC9401b605mr non-isolation buck 87% 0.6 XC9401b605mr - buck 88% - dc / 12vac XC9401b605mr - buck-boost 86% - general description the XC9401 series are off-line controller ics for led lighting. through optimization of the external components, these ics can be made to operate in a range from 85vac to 270vac, as we ll as by dc input, and a diversity of specifications can be achieved by selecting components appropriate for the circuit conf iguration. fixed off-time cont rol is used for the basic contro l method, and by detecting the curr ent that flows to the external power mosfet, t he current that flows to the led is monitored to provide a stable power supply for led lighting. two product se ries differing by function type are available, the XC9401a type and the XC9401b type. the circuit configuration of type a is designed for the power fa ctor, achieving a high power factor by synchronizing the led current to the input current (sine wave). in this circuit configuration, a high-capacity, high-withstand voltage electrolytic capacitor is not necessary after the bridge rectifier circuit fr om the ac input. the input filter removes high frequency switch ing noise from the ac line, allowing a small-capacity ceramic capacitor to be used. type b holds the peak current due to switching that flows to the external power mosfet constant, enabling the led current to be kept constant. by keeping the led current const ant, this circuit configuration makes it possible to achieve a stable light source with high efficiency. a pplications led lights ( <=10w ) led lamps led tube lights led spot lights led stands features operating voltage : 85vac ~ 270vac v dd input voltage range : 9v ~ 15v fixed off-time : 6.0 s protection circuits : thermal shutdown 150 o c (typ.) v dd over voltage protection, v dd =18v (typ.) uvlo, v dd =6.5v (typ.) over current protection v isen =0.7v (typ.) dimming : pwm dimming package : sot-26 operating ambient temperature : -40 o c ~ +85 o c environmentally friendly : eu rohs compliant, pb free solution examples etr3201-006 typical application circuits ( XC9401b605mr-g 100vac non-isolation buck t yp e ) gnd gate c1 0.1 f/250v d1 rf071m2s led 20series/110ma c4 1uf/100v en/dim l1 1mh q1 ipd60r3k3c6 l2 3.3mh r3 2.2 c3 10 f/25v br1 b4s r5 33k zd1 12v r7 20 100vac /110vac c2 10 f/250v i sen v dd nf r6 33k r4 jp + *due to dispersion of constant values of exte rnal components, the above values may be deviated. please understand that the above are typical values. for det ails, refer to the XC9401 series application notes.
2/19 XC9401 series block diagram 1) XC9401 series, type a 2) XC9401 series, type b en/dim logic i sen gate buffer drive & voltage level shifter voltage regulator 5v v sine to internal circuits gnd v dd thermal shutdown 150 ovp 16.5v / 18v en/dim & delay off time controller 6 s v ref (bandgap reference) uvlo 6.5v / 7.5v min. on time controller over current limit cmp 0.2783 pwmcmp off time controller 140 s (over current limit) 180 0.7v logic i sen gate buffer drive & voltage level shifter voltage regulator 5v nf to internal circuits gnd v dd thermal shutdown 150 ovp 16.5v / 18v en/dim & delay off time controller 6 s v ref (bandgap reference) uvlo 6.5v / 7.5v min. on time controller over current limit cmp 0.2783 pwmcmp off time controller 140 s (over current limit) 180 0.7v en/dim
3/19 XC9401 series product classification ordering information XC9401 ?????- designator item symbol description a type b refer to selection guide off time 6 off time is fixed in 6 s ? accuracy 05 i sen voltage accuracy is 5% ?- (*1) package (order unit) mr-g sot-26 (3,000/reel) (*1) the ?-g? suffix denotes halogen and antimony free as well as being fully rohs compliant. selection guide type comparison with isen pwm dimming description a "v sine " 0.2783 yes type a is suitable for pfc circuit. b "v ref " 0.278 yes type b is suitable for constant led current circuit. pin configuration pin assignment pin number sot-26 pin name functions 1 i sen current feedback 2 v dd power input 3 gate external power mos drive 4 en/dim active / stand-by / pwm dimming control 5 gnd ground type a: v sine v sine pin: current feedback reference voltage input. 6 type b: nf nf pin: no function. please connect to gnd. *type a *type b
4/19 XC9401 series function pin name en/dim status l stand-by mode h active mode en/dim open undefined state (*1) (*1) prohibited in the XC9401 series due to undefined operation. absolute maximum ratings ta=25 o c parameter symbol ratings units v dd pin voltage v dd -0.3 ~ +19.4 v en/dim pin voltage v endim -0.3 ~ +19.4 v gate pin voltage v mode -0.3 ~ v dd +0.3 or +19.4 (*2) v i sen pin voltage v isen -0.3 ~ 5.5 v v sine pin voltage v sine nf pin voltage v nf -0.3 ~ 5.5 ma power dissipation sot-26 pd 250 mw operating ambient temperature topr -40 ~ +85 storage temperature tstg -55 ~ +125 (*1) all voltages are described based on gnd. (*2) the maximum value should be either v dd +0.3 or +19.4v in the lowest.
5/19 XC9401 series electrical characteristics XC9401 series, type a ta=25 o c parameter symbol conditions min. typ. max. units circuit v dd voltage range v dd 9 - 15 v i sen voltage v isen v isen =sweep (*1) , v sine =1v 0.2644 0.2783 0.2922 v v sine voltage range (*2) v sine gnd - 1.8 v uvlo detect voltage v uvlo v dd =sweep (*3) 5.5 6.5 7.5 v uvlo release voltage v uvlor v dd =sweep (*4) 6.5 7.5 8.5 v uvlo hysteresis width v uvloh v uvloh =v uvlor - v uvlo - 1.1 - v supply current (*5) i dd v dd =v en/dim =15v - 250 300 a stand-by current (*6) i stb v dd =15v, v en/dim =gnd, v sine =gnd - 225 280 a v dd overvoltage protection voltage v ovp v dd =sweep (*3) , v en/dim =v dd 17 18 19 v v dd overvoltage protection release voltage v ovpr v dd =sweep (*4) , v en/dim =v dd 15.5 16.5 17.5 v v dd overvoltage protection hysteresis width v ovph v ovph =v ovp - v ovpr - 1.5 - v v dd overvoltage protection discharge current (*7) i ovp v dd =19v - 30 - ma i gate = -10ma gate ?h? on resistance r gateh r gateh = (v dd -v gate ) / i gate 2 5 8 ? v isen =1v, r 1 =300 ? gate ?l? on resistance r gatel r gatel = v gate / i r1 (*8) - 5 - ? off time (*9) t off v isen =0.4v, v sine =1v - 6 - s minimum on time t onmin v isen =1v - 0.2 - s current limit voltage (*10) v lim v isen =sweep, v sine =1.4v 0.65 0.70 0.95 v thermal shutdown temperature (*11) t tsd - 150 - o c thermal shutdown release temperature t tsdr - 130 - o c thermal shutdown hysteresis width t hys - 20 - o c pwm dimmer delay time1 (*12) t pwmdim1 v en/dim =2.2v to gnd - 0.3 4.0 s pwm dimmer delay time2 (*13) t pwmdim2 v en/dim =gnd to 2.2v 100 140 200 s en/dim ?h? voltage v en/dimh 2.2 - 15.0 v en/dim ?l? voltage v en/diml gnd - 0.4 v en/dim bias current i en/dimh v en/dim =15v - - 32 a unless otherwise stated, gnd standard, v dd =13v, v en/dim =v dd , v isen =gnd, v sine =5.5v (*1) i sen pin voltage measured at start of gate pin switching. (*2) indicates v sine pin voltage at which off time 6 s switching becomes possible. (*3) v dd pin voltage measured when gate pin=l occurs. (*4) v dd pin voltage measured when gate pin=h occurs. (*5) indicates internal supply current when ?h? level is input into en/dim pin and all circuits ar e activated. (when not switching. ) (*6) indicates internal supply current when ?l? level is i nput into en/dim pin and the switching circuit is stopped. (*7) indicates the current that discharges the capacitance between the v dd and gnd pins at v ovp . (*8) please refer to p.7 ?circuit ?. (*9) may not be fixed at 6 s when uvlo is detected or during dim signal control. (*10) when the current limit voltage v lim is exceeded, off time is extended to about 140 s to prevent element damage. for details, refer to the operation description. (*11) to protect the ic from thermal destruction, thermal shutdown activates when the chip temperature reaches 150 o c and forcibly sets the gate pin voltage to ?l?. when the chip temperature falls to 130 o c, operation resumes. (*12) time from attainment of en/dim ?l? voltage until gate pin=l. (*13) time from attainment of en/dim ?h? voltage until gate pin=h.
6/19 XC9401 series electrical characteristics (continued) XC9401 series, type b ta=25 o c parameter symbol conditions min. typ. max. units circuit v dd voltage range v dd 9 - 15 v i sen voltage v isen v isen =sweep (*1) 0.3259 0.3430 0.3602 v uvlo detect voltage v uvlo v dd =sweep (*2) 5.5 6.5 7.5 v uvlo release voltage v uvlor v dd =sweep (*3) 6.5 7.5 8.5 v uvlo hysteresis width v uvloh v uvloh =v uvlor - v uvlo - 1.1 - v supply current (*4) i dd v dd =v en/dim =15v - 250 300 a stand-by current (*5) i stb v dd =15v, v en/dim =gnd - 225 280 a v dd overvoltage protection voltage v ovp v dd =sweep (*2) 17 18 19 v v dd overvoltage protection release voltage v ovpr v dd =sweep (*3) 15.5 16.5 17.5 v v dd overvoltage protection hysteresis width v ovph v ovph =v ovp - v ovpr - 1.5 - v v dd overvoltage protection discharge current (*6) i ovp v dd =19v - 30 - ma i gate = -10ma gate ?h? on resistance r gateh r gateh = (v dd - v gate ) / i gate 2 5 8 ? v isen =1v, r 1 =300 ? gate ?l? on resistance r gatel r gatel = v gate / i r1 (*7) - 5 - ? off time (*8) t off v isen =0.45v - 6 - s minimum on time t onmin v isen =1v - 0.2 - s current limit voltage (*9) v lim v isen =sweep 0.65 0.70 0.95 v thermal shutdown temperature (*10) t tsd - 150 - o c thermal shutdown release temperature t tsdr - 130 - o c thermal shutdown hysteresis width t hys - 20 - o c pwm dimmer delay time1 (*11) t pwmdim1 v en/dim =2.2v to gnd - 0.3 4.0 s pwm dimmer delay time2 (*12) t pwmdim2 v en/dim =gnd to 2.2v 100 140 200 s en/dim ?h? voltage v en/dimh 2.2 - 15.0 v en/dim ?l? voltage v en/diml gnd - 0.4 v en/dim bias current i en/dimh v en/dim =15v - - 32 a unless otherwise stated, gnd standard, v dd =13v, v en/dim =v dd , v isen =gnd, v sine =5.5v (*1) i sen pin voltage measured at start of gate pin switching. (*2) indicates v sine pin voltage at which off time 6 s switching becomes possible. (*3) v dd pin voltage measured when gate pin=l occurs. (*4) v dd pin voltage measured when gate pin=h occurs. (*5) indicates internal supply current when ?h? level is input into en/dim pin and all circuits ar e activated. (when not switching. ) (*6) indicates internal supply current when ?l? level is i nput into en/dim pin and the switching circuit is stopped. (*7) indicates the current that discharges the capacitance between the v dd and gnd pins at v ovp . (*8) please refer to p.8 ?circuit ?. (*9) may not be fixed at 6 s when uvlo is detected or during dim signal control. (*10) when the current limit voltage v lim is exceeded, off time is extended to about 140 s to prevent element damage. for details, refer to the operation description. (*11) to protect the ic from thermal destruction, thermal shutdown activates when the chip temperature reaches 150 o c and forcibly sets the gate pin voltage to ?l?. when the chip temperature falls to 130 o c, operation resumes. (*12) time from attainment of en/dim ?l? voltage until gate pin=l. (*13) time from attainment of en/dim ?h? voltage until gate pin=h.
7/19 XC9401 series typical application circuit (type a) 2) circuit i sen v dd gate v sine gnd en/dim v v a v v c vdd v dd v isen pwm signal v sine waveform measure point i sen v dd gate v sine gnd en/dim v v a v v v sw1 c vdd v dd v isen v cedim v sine waveform measure point a i sen v dd gate v sine gnd en/dim v v v v c vdd v dd v isen v sine i gate i sen v dd gate v sine gnd en/dim v v v v c vdd v dd v isen v sine waveform measure point a r 1 i r1 1) circuit 3) circuit 4) circuit
8/19 XC9401 series typical application circuit (continued) (type b) i sen v dd gate nf gnd en/dim v v a v c vdd v dd v isen pwm signal waveform measure point i sen v dd gate nf gnd en/dim v v v c vdd v dd v isen i gate i sen v dd gate nf gnd en/dim v v v c vdd v dd v isen waveform measure point a r 1 i r1 i sen v dd gate nf gnd en/dim v v a v v sw1 c vdd v dd v isen v cedim waveform measure point a 1) circuit 2) circuit 3) circuit 4) circuit
9/19 XC9401 series operational explanation the internal circuitry of the XC9401 series consists of a reference voltage source (v ref ), pwm comparator (pwmcmp), buffer drive circuit (buffer drive), over-current protection circuit (over current limit), under-voltage lockout circuit (uvlo), v dd over voltage protection circuit (ovp), thermal shutdown circuit (the rmal shutdown), and other circuits . (refer to the block diagram. ) the control method is fixed off-time control. with type a, the pwm comparator compares the voltage at the i sen pin to that at the v sine pin x 0.2783 (typ.) the output of the pwm comparator is connected to the buffer drive circuit and an external power mos fet drive signal is output from the gate pin. when the i sen pin voltage is 0.2783 times (typ.) higher than the v sine pin voltage, the gate pin switches to low. after a fixed off-time elapses, the gate pin switches to high. this operation is repeated continuously. with type b, the pwm comparator compares the 0.343v (typ.), which is 0.2783 times (typ.) the reference voltage, to the i sen pin voltage. fig.1. reference circuit
10/19 XC9401 series operational explanation (continued) details of each circuit block are as follows. reference voltage that enables stable operati on of the internal functions of the ic. with type a, the pwm comparator compares the voltage at the i sen pin to that at the v sine pin x 0.2783 (typ.) when the i sen pin voltage is higher than v sine x 0.2783, the gate pin switches to low. with type b, the pwm comparator compares the 0.343v (typ.), which is 0.2783 times (typ.) the reference voltage, to the i sen pin voltage. this outputs an h or l signal from t he gate pin that drives the external power mos fet. the h level is the v dd pin voltage, and the l level is the gnd pin voltage. the signal that is output is determined by th e pwm comparator, as well as by the below described uvlo circuit, v dd over-voltage protection circuit, over-current prot ection circuit, thermal shutdown, and en/dim pin voltage. when the power is turned on, it takes about 200 s (max.) for the gate pin to initially become ?h? after the en/dim pin voltage is changed from ?l? to ?h?. inputting ?l? to the en/dim pin voltage forcibly puts the gate pin voltage in the ?l? state. t he stopped state when the en/dim pin voltage is ?l? is not shutdown; rather , it is a stand-by state wher ein the switching pulse output is stopped by logic circu it and the internal circuitry continues to operat e. for this reason, a high-speed response is possible even when a pulse signal (500 h z to 1 khz) is input to the en/dim pin, and by adjusting the duty width of the pwm signal input in to the en/dim pin, the led can be dimmed. < minimum on time controller circuit > spike noise and ripple noise occur in the XC9401 series due to sw itching. to prevent malfunction of the internal circuit by suc h noises, a minimum on time is established. t he gate pin voltage is forcibly kept at ? h ? until the minimum on time elapses. (refer to fig. 2.) during the minimum on time, if the below described uvlo, ovp or thermal shutdown is detected, or if the stand-by state is set from the en/dim pin, the gate pin vo ltage is immediately changed to ?l?. this circuit controls the fixed off time . the off time is normally fixed at 6 s (typ.), and the gate pin voltage is kept at ?l? during this time. after the fixed off time, the gate pin voltage becomes ?h?. (refer to fig. 2.) if the en/dim pin voltage is changed from ?l? to ?h? during the above pwm dimming, the off time is 140 s (typ.) during the over-current protection and ulvo release described below. fig.2. off time controller, min. on time controller
11/19 XC9401 series operational explanation (continued) when the switching current of the external power mosfet is in the over-c urrent state and the i sen pin voltage reaches 0.7v (typ.), l level voltage is output to the gate pin and the extern al power mosfet is turned off. in addition, the off time is temporarily extended from the normal 6.0 s (typ.) to 140 s (typ.). when the i sen pin voltage falls to 0.7v (typ.) or less after the extended off time, normal operation resumes. when led+ and led- short circuit in the reference circuit shown in fig.1, the current slope of the coil (l2) becomes smaller during the off time than the slope during normal switchi ng, which prevents sufficient discharge during the 6.0 s (typ.) off time. during the minimum on time, the external power mosfet q1 al ways turns on, and thus the coil current gradually increases. the isen pin voltage becomes higher at the same time as the coil current increa ses, and when the isen pin voltage reaches 0.7v (typ.), the off time is extended to 140 s (typ.). (refer to fig.3) when the v dd pin voltage falls to the uvlo detect voltage (v uvlo ) or lower, the gate pin voltage is forcibly set to ?l? to prevent incorrect pulse output. when the v dd pin voltage rises to the uvlo release voltage (v uvlor ) or higher, switching resumes. a uvlo stop simply stops pulse output; it is not a shutdown state and the intern al circuitry continues to operate. when the v dd pin voltage rises to the v dd overvoltage protection voltage (v ovp ) or higher, the charge of the capacitance between the v dd pin and gnd pin is discharged by the resistance and transistor connected between the v dd pin and gnd pin in order to prevent withstand voltage destruction in the internal circuitry. the gate pin voltage at this time is forcibly set to ?l?. when the v dd pin voltage falls to the v dd overvoltage protection release voltage (v ovpr ) or lower, switching is resumed. to protect the ic from thermal destr uction, thermal shutdown activates when the chip temperature reaches 150 o c (typ.) and forcibly sets the gate pin voltage to ?l ?. when the chip temperature falls to 130 o c (typ.), switching is resumed. fig.3. over current limit (fig.1. operation when led+ and led- short-circuit in the reference circuit)
12/19 XC9401 series note on use 1. for the phenomenon of temporal and transitional volta ge decrease or voltage increase, the ic may be damaged or deteriorated if ic is used beyond t he absolute max. specifications. 2. in a switching controller such as the XC9401 series, and in a peripheral circuit controlled by a switching controller, spike voltage and ripple voltage occur. these are greatly affected by the peripheral components (inductance value of the coil, capacitors, peripheral component board layout). during design, test suffici ently using the actual equipment. 3. a delay time of 200 s (max.) after the uvlo release voltage, and after en/dim pin voltage ?h?, has been established in the ic. keep these delay times in mind during sequence design. 4. the nf pin of the XC9401b605mr-g is conn ected to part of the internal circuitry, although not as a circuit function. when using this ic, connect this pin to gnd. 5. make sure to use this ic within specified electric characteristics. 6. please pay attention not to exceed absolute maxi mum ratings of this ic and external components. 7. to reduce v dd fluctuations as much as possible, connect a bypass capacitor (c vdd ) over the shortest path between v dd and gnd. if there is too much distance between the ic and c vdd , operation may become unstable. 8. please mount each external component as close to the ic as possible. please also wire external components as close to the ic as possible and use thick, short connecting traces to reduce the circuit impedance. 9. sufficiently reinforce the wiring between v dd and gnd. noise that enters through v dd and gnd during switching may cause unstable ic operation. 10. torex places an importance on improv ing our products and their reliability. we request that users incorporate fail-safe designs and post-agi ng protection treatment when using torex products in their systems.
13/19 XC9401 series typical performance characteristics (1) supply current vs. v dd voltage (2) supply current vs. ambient temperature (3) stand-by current vs. v dd voltage (4) stand-by current vs. ambient temperature (6) en/dim bias current vs. ambient temperature (5) en/dim bias current vs. en/dim voltage (7) i sen voltage vs. ambient temperature XC9401 0 50 100 150 200 250 300 1 3 5 7 9 111315 v dd voltage [v] ta=-40 ta=25 ta=85 v en d im =v dd , v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f( tm k316bj106kl- t) supply current [ a] XC9401 0 50 100 150 200 250 300 1 3 5 7 9 111315 v dd voltage [v] ta=- 40 ta=25 ta=85 v en d im =gnd, v isen =gnd v sin e =gnd(type a) or v nf =gnd(type b) c vd d =10 f( tm k316bj106kl- t) stand-by current [ a] XC9401 0 4 8 12 16 20 13 579111315 en/dim voltage [v] ta=-40 ta=25 ta=85 v dd =13v, i sen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f( tm k316bj106kl- t) en/dim bias current [ a] XC9401 200 220 240 260 280 -50 -25 0 25 50 75 100 ambient temperature : ta [ ] v dd =15v, v en d im =v dd , v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tmk316bj106kl-t) supply current [ a] XC9401 180 200 220 240 260 -50 -25 0 25 50 75 100 ambient temperature : ta [ ] v dd =15v, v endim =gnd, v isen =gnd v sin e =0v(type a) or v nf =gnd(type b) c vd d =10 f(tmk316bj106kl-t) stand-by current [ a] XC9401 6 8 10 12 14 16 -50-250 255075100 ambient temperature : ta [ ] v dd =13v, v en /d im =13v, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tmk316bj106kl-t) en/dim bias current [ a] XC9401a605mr 0.2450 0.2550 0.2650 0.2750 0.2850 0.2950 -50 -25 0 25 50 75 100 ambient temperature : ta [ ] v dd =13v, v en d im =v dd v sin e =1.0v(type a) c vd d =10 f( tm k316bj106kl- t) i sen voltage [v] XC9401b605mr 0.3350 0.3400 0.3450 0.3500 0.3550 0.3600 - 50 - 25 0 25 50 75 100 ambient temperature : ta [ ] v dd =13v, v en d im =v dd v nf =gnd(type b) c vd d =10 f(tmk316bj106kl-t) i sen voltage [v]
14/19 XC9401 series typical performance characteristics (continued) (8) uvlo detect voltage vs. ambient temperature (9) uvlo release voltage vs. ambient temperature (10) uvlo hysteresis width vs. ambient temperature (11) v dd overvoltage protection voltage vs. ambient temperature (12) v dd overvoltage protection release voltage vs. ambient temperature (13) v dd overvoltage protection hysteresis width (14) v dd overvoltage protection discharge current vs. ambient temperature XC9401 5.5 5.9 6.3 6.7 7.1 7.5 -50-250 255075100 ambient temperature : ta [ ] v en d im =v dd, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl- t) uvlo detect voltage [v] XC9401 6.5 6.9 7.3 7.7 8.1 8.5 -50 -25 0 25 50 75 100 125 ambient temperature : ta [ ] v en d im =v dd, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl-t) uvlo release voltage [v] XC9401 1.05 1.10 1.15 1.20 1.25 1.30 -50-250 255075100 ambient temperature : ta [ ] v en d im =v dd, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl- t) uvlo hysteresis width [v] XC9401 17.2 17.4 17.6 17.8 18.0 18.2 -50-250 255075100 ambient temperature : ta [ ] v dd overvoltage protection voltage [v] v en d im =v dd, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl- t) XC9401 1.30 1.35 1.40 1.45 1.50 1.55 -50-250 255075100 ambient temperature : ta [ ] v dd overvoltage protection hysteresis width [v] v en d im =v dd, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl- t) XC9401 15.8 16.0 16.2 16.4 16.6 16.8 -50-250 255075100 ambient temperature : ta [ ] v dd overvoltage protection release voltage [v] v en d im =v dd, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl-t) XC9401 20 25 30 35 40 45 -50-250 255075100 ambient temperature : ta [ ] v dd overvoltage protection discharge current [ma] v dd =19v, v en d im =v dd, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl-t)
15/19 XC9401 series typical performance characteristics (continued) (15) gate ?h? on resistance vs. ambient temperature (16) gate ?l? on resistance vs. ambient temperature (17) off time vs. ambient temperature (18) minimum on time vs. ambient temperature (19) current limit voltage vs. ambient temperature (20) pwm dimmer delay time1 vs. ambient temperature (21) pwm dimmer delay time2 vs. ambient temperature XC9401 2.0 3.0 4.0 5.0 6.0 7.0 -50 -25 0 25 50 75 100 ambient temperature : ta [ ] v dd =13v, v endim =v dd , i gate =-10ma, v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl- t) gate ?h? on resistance [ ? ] XC9401 2.0 3.0 4.0 5.0 6.0 7.0 -50 -25 0 25 50 75 100 ambient temperature : ta [ ] v dd =13v, v en d im =v dd , r1=300 , v isen =1.0 v v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl-t) gate ?l? on resistance [ ? ] XC9401 5.0 5.5 6.0 6.5 7.0 -50-25 0 25 50 75100 ambient temperature : ta [ ] v en d im =v dd, v isen =0.4v(type a) or 0.45v(type b) v sin e =1.0v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl- t) off time [ s] XC9401 0.14 0.16 0.18 0.20 0.22 -50-250 255075100 ambient temperature : ta [ ] v en d im =v dd, v isen =1.0 v v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl-t) minimum on time [ s] XC9401 0.65 0.70 0.75 0.80 0.85 0.90 0.95 -50-250 255075100 ambient temperature : ta [ ] v en d im =v dd, v isen =gnd v sin e =1.4v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl- t) current limit voltage [v] XC9401 0.20 0.25 0.30 0.35 0.40 -50-250 255075100 ambient temperature : ta [ ] v dd =13v, v en /d im =2.2v to gnd , v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl- t) pwm dimmer delay time1 [ s] XC9401 100 120 140 160 180 -50-250 255075100 ambient temperature : ta [ ] v dd =13v, v en /d im =gnd to 2.2v , v isen =gnd v sin e =5.5v(type a) or v nf =gnd(type b) c vd d =10 f(tm k316bj106kl-t) pwm dimmer delay time2 [ s]
16/19 XC9401 series typical performance characteristics (continued) (22) en/dim ?h? voltage vs. ambient temperature (23) en/dim ?l? voltage vs. ambient temperature XC9401 1.20 1.30 1.40 1.50 1.60 1.70 -50 -25 0 25 50 75 100 ambient temperature : ta [ ] v dd =13v , v isen =gnd v sin e =5.5v( type a) or v nf =gnd( type b) c vd d =10 f(tm k316bj106kl-t) en/dim ?h? voltage [v] XC9401 0.50 0.60 0.70 0.80 0.90 1.00 - 50 - 25 0 25 50 75 100 ambient temperature : ta [ ] v dd =13v , v isen =gnd v sin e = 5.5v(type a) or v nf =gnd(type b) c vd d =10 f( tmk316bj106kl- t) en/dim ?l? voltage [v]
17/19 XC9401 series packaging information sot-26 (unit: mm) 5 1 3 2.90.2 0.4 +0.1 -0.05 0.15 +0.1 -0.05 00.1 2 6 4 (0.95) (0.95) 0.4 +0.1 -0.05 1 2 3 4
18/19 XC9401 series marking rule sot-26 represents product series ? represents product type ? represents production lot number 01 09, 0a 0z, 11 9z, a1 a9, aa az, b1 zz in order. (g, i, j, o, q, w excluded) *no character inversion used. mark product series 3 XC9401******-g mark product series a a XC9401a605**-g b a XC9401b605**-g 1 2 3 6 4 5
19/19 XC9401 series 1. the products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. consult us, or our representatives before use, to confirm that the informat ion in this datasheet is up to date. 2. we assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. the products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. please use the products listed in this datasheet within the specified ranges. should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. we assume no responsibility for damage or loss due to abnormal use. 7. all rights reserved. no part of this dat asheet may be copied or reproduced without the prior permission of torex semiconductor ltd.

▲Up To Search▲

Price & Availability of XC9401

	To Download XC9401 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .