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v23990-k229-a-pm preliminary datasheet miniskiip? 2nd gen. pim size 2, 1200v / 25a v23990-k229-a-01-14 maximum ratings / h?chstzul?ssige werte parameter condition symbol values unit max. input rectifier bridge gleichrichter repetitive peak reverse voltage v rrm 1600 v periodische rckw. spitzensperrspannung forward current per diode dc current t h =80c; i fa v 40 limited by power terminal a dauergrenzstrom tc=80c 40 limited by power terminal surge forward current t p =10ms t j =25c i fsm 370 a sto?strom grenzwert i 2 t-value t p =10ms t j =25c i 2 t 680 a 2 s grenzlastintegral power dissipation per diode t j =150c t h =80c p tot 50 w verlustleistung pro diode t c = 80c 76 transistor inverter transistor wechselrichter collector-emitter break down voltage v ce 1200 v kollektor-emitter-sperrspannung dc collector current t j =150c t h =80c, i c 27 a kollektor-dauergleichstrom t c =80c 35 repetitive peak collector current t p =1ms t h =80c i cpuls 54 a periodischer kollektorspitzenstrom power dissipation per igbt t j =150c t h =80c p tot 56 w verlustleistung pro igbt t c =80c 85 gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time tj125c v ge =15 v t sc 10 us kurzschlu?verhalten v cc = 900v diode inverter diode wechselrichter dc forward current t j =150c t h =80c, i f 23 a dauergleichstrom t c =80c 31 repetitive peak forward current t p =1ms t h =80c i frm 47 a periodischer spitzenstrom power dissipation per diode t j =150c t h =80c p tot 41 w verlustleistung pro diode t c = 80c 62 transistor brc transistor brc collector-emitter break down voltage v ce 1200 v kollektor-emitter-sperrspannung dc collector current t j =150c t h =80c i c 32 a kollektor-dauergleichstrom t j =150c t c =80c 36 repetitive peak collector current t p =1ms t h =80c i cpuls 64 a periodischer kollektorspitzenstrom power dissipation per igbt t j =150c t h =80c p tot 69 w verlustleistung pro igbt t c =80c 105 gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time tj125c vge=15v t sc 10 us kurzschlu?verhalten vce=900 v miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page1 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip? 2nd gen. pim size 2, 1200v / 25a v23990-k229-a-01-14 maximum ratings / h?chstzul?ssige werte parameter condition symbol values unit max. diode brc diode brc dc forward current t j =150c t h =80c i f 25 a dauergleichstrom t j =150c t c =80c 31 repetitive peak forward current t p =1ms t h =80c i frm 49 a periodischer spitzenstrom power dissipation per diode t j =150c t h =80c p tot 45 w verlustleistung pro diode t c = 80c 69 thermal properties thermische eigenschaften max. chip temperature t j max 150 c max. chiptemperatur storage temperature t st g -40+125 c lagertemperatur operation temperature t o p -40+125 c betriebstemperatur insulation properties modulisolation insulation voltage t=1min v is 4000 vdc isolationsspannung creepage distance min 12,7 mm kriechstrecke clearance min 12,7 mm luftstrecke miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page2 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip? 2nd gen. pim size 2, 1200v / 25a v23990-k229-a-01-14 characteristic values description symbol conditions unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max input rectifier bridge gleichrichter forward voltage v f tj=25c 25 0,8 1,08 1,35 v durchla?pannung tj=125c 1,03 threshold voltage (for power loss calc. only) v to tj=25c 0,89 v schleusenspannung tj=125c 25 0,78 slope resistance (for power loss calc. only) r t tj=25c 0,008 ohm ersatzwiderstand tj=125c 25 0,01 reverse current i r tj=25c 1500 0 0,1 ma sperrstrom tj=14010c 1500 0 1,5 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 1,39 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke50um = 0,61 w/mk 0,92 k/w transistor inverter transistor wechselrichter gate emitter threshold voltage v ge(th) tj=25c vce=vge 0,001 5 5,8 6,5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 25 1,35 1,71 2,15 v kollektor-emitter s?ttigungsspannung tj=125c 15 25 1,9 collector-emitter cut-off current incl. diode i ces tj=25c 0 1224 0 0,05 ma kollektor-emitter reststrom tj=125c gate-emitter leakage current i ges tj=25c 25 0 0 300 na gate-emitter reststrom tj=125c integrated gate resistor r gint 8 ohm integrirter gate widerstand turn-on delay time t d(on) tj=25c rgoff= 36 ohm ns einschaltverz?gerungszeit tj=125c rgon= 36 ohm 15 600 25 76 rise time t r tj=25c rgoff= 36 ohm ns anstiegszeit tj=125c rgon= 36 ohm 15 600 25 25 turn-off delay time t d(off) tj=25c rgoff= 36 ohm ns abschaltverz?gerungszeit tj=125c rgon= 36 ohm 15 600 25 495 fall time t f tj=25c rgoff= 36 ohm ns fallzeit tj=125c rgon= 36 ohm 15 600 25 207 turn-on energy loss per pulse e on tj=25c rgoff= 36 ohm mws einschaltverlustenergie pro puls tj=125c rgon= 36 ohm 15 600 25 3,15 turn-off energy loss per pulse e off tj=25c rgoff= 36 ohm mws abschaltverlustenergie pro puls tj=125c rgon= 36 ohm 15 600 25 2,8 input capacitance c ies tj=25c f=1mhz 0 25 1,8 nf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0 25 0,3 nf ausgangskapazit?t tj=125c reverse transfer capacitance c rss tj=25c f=1mhz 0 25 0,2 nf rckwirkungskapazit?t tj=125c gate charge q gate tj=25c vce=600v 15 160 nc gate ladung tj=125c icpulse=25a thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 1,25 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc dicke50um = 0,61 w/mk 0,83 k/w coupled thermal resistance inverter diode-transistor r thjh thermal grease thickness50um 0,4 k/w gekoppelte w?rmewiderstand wechselrichter diode-transistor warmeleitpaste dicke50um = 0,61 w/mk values miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page3 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip? 2nd gen. pim size 2, 1200v / 25a v23990-k229-a-01-14 characteristic values description symbol conditions unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max values diode inverter diode wechselrichter diode forward voltage v f tj=25c 25 1,4 1,7 2,2 v durchla?spannung tj=125c 25 1,77 peak reverse recovery current i rm tj=25c rgon= 36 ohm 600 25 rckstromspitze tj=125c dif/dt = 1125 a/us 0 600 25 33 reverse recovery time t rr tj=25c rgon= 36 ohm 600 25 ns sperreverz?gerungszeit tj=125c dif/dt = 1125 a/us 0 600 25 560 reverse recovered charge q rr tj=25c rgon= 36 ohm 600 25 uc sperrverz?gerungsladung tj=125c dif/dt = 1125 a/us 0 600 25 5,7 reverse recovered energy erec tj=25c rgon= 36 ohm 600 25 mws sperrverz?gerungsenergie tj=125c dif/dt = 1125 a/us 0 600 25 2,22 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 1,71 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke50um = 0,61 w/mk 1,13 k/w transistor brc transistor brc gate emitter threshold voltage v ge(th) tj=25c vce=vge 0,001 5 5,8 6,5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 25 1,35 1,61 2,15 v kollektor-emitter s?ttigungsspannung tj=125c 15 25 1,81 collector-emitter cut-off i ces tj=25c 0 1224 0 0,05 ma kollektor-emitter reststrom tj=125c gate-emitter leakage current i ges tj=25c 25 0 0 300 na gate-emitter reststrom tj=125c integrated gate resistor r gint ohm integrirter gate widerstand turn-on delay time t d(on) tj=25c rgoff= 36 ohm ns einschaltverz?gerungszeit tj=125c rgon= 36 ohm 15 600 25 72,2 rise time t r tj=25c rgoff= 36 ohm ns anstiegszeit tj=125c rgon= 36 ohm 15 600 25 26,8 turn-off delay time t d(off) tj=25c rgoff= 36 ohm ns abschaltverz?gerungszeit tj=125c rgon= 36 ohm 15 600 25 481 fall time t f tj=25c rgoff= 36 ohm ns fallzeit tj=125c rgon= 36 ohm 15 600 25 192,9 turn-on energy loss per pulse e on tj=25c rgoff= 36 ohm mws einschaltverlustenergie pro puls tj=125c rgon= 36 ohm 15 600 25 3,18 turn-off energy loss per pulse e of f tj=25c rgoff= 36 ohm mws abschaltverlustenergie pro puls tj=125c rgon= 36 ohm 15 600 25 2,65 sc withstand time t sc us kurzschlu?verhalten tj=150c 15 1200 10 input capacitance c iss tj=25c f=1mhz 0 25 1,8 nf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0 25 0,3 nf ausgangskapazit?t tj=125c reverse transfer capacitance c ies tj=25c f=1mhz 0 25 0,2 nf rckwirkungskapazit?t tj=125c gate charge q gate tj=25c vce=600v 15 160 nc gate ladung tj=125c icpulse=25a thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 1,01 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke50um = 0,61 w/mk 0,67 k/w miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page4 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip? 2nd gen. pim size 2, 1200v / 25a v23990-k229-a-01-14 characteristic values description symbol conditions unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max values diode brc diode brc diode forward voltage v f tj=25c 25 1,4 1,52 2,2 v durchla?spannung tj=125c 25 1,49 reverse current i r tj=25c 1224 0 50 ua sperrstrom tj=125c reverse recovery time t rr tj=25c rgon= 36 ohm ns sperreverz?gerungszeit tj=125c dif/dt = 875 a/us 0 600 25 625,6 reverse recovered charge q rr tj=25c rgon= 36 ohm uc sperrverz?gerungsladung tj=125c dif/dt = 875 a/us 0 600 25 5,41 reverse recovery energy e rec tj=25c rgon= 36 ohm mws sperrverz?gerungsenergie tj=125c dif/dt = 875 a/us 0 600 25 2,13 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 1,54 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke50um = 0,61 w/mk 1,02 k/w ptc-thermistor ptc-widerstand nominal resistance r 25 tj=25c tolerance = 3% 0,97 1 1,03 kohm nominaler widerstand r 100 tj=100c tolerance = 2% 1,637 1,67 1,703 kohm typical temperature coefficient tj=25c 0,76 %/k tipischer temperaturkoeffizient tj=125c recommended measuring current tj=25c 1 3 empfohlener messstrom tj=125c measured values tj=25c i m = 1ma 0,93 1,03 gemessene werte i m = 3ma 2,84 3,4 ma v i m v ptc miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page5 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 output inverter fi gure 1 . typical output characteristics fi gure 2 . typical output characteristics output inverter igbt output inverter igbt ic= f(v ce ) ic= f(v ce ) parameter: tp = 250 us tj = 25 c parameter: tp = 250 us tj = 125 c v ge parameter: from: 7 v to 17 v v ge parameter: from: 7 v to 17 v in 1 v steps in 1 v steps fi gure 3 . typical transfer characteristics fi gure 4 . typical diode forward current as output inverter igbt a function of forward voltage ic= f(v ge ) output inverter fred i f =f(v f ) parameter: tp = 250 us v ce = 10 v parameter: tp = 250 us 0 10 20 30 40 50 60 012345 v ce (v) ic (a) v ge =17v v ge =7v 0 10 20 30 40 50 60 02468101214 v ge (v) i c (a) tj=125c tj= 25c 0 10 20 30 40 50 60 0 0,5 1 1,5 2 2,5 3 3,5v f (v) i f (a) tj=25c tj=125c 0 10 20 30 40 50 60 012345 v ce (v) ic (a) v ge =7v v ge =17v miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page6 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 output inverter figure 5. typical switching energy losses figure 6. typical switching energy losses as a function of collector current as a function of gate resistor output inverter igbt output inverter igbt e = f (ic) e = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v rgon= 36 ic = 25 a rgoff= 36 figure 7. typical switching times as a figure 8. typical switching times as a function of collector current function of gate resistor output inverter igbt output inverter igbt t = f (ic) t = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v rgon= 36 ic = 25 a rgoff= 36 t doff t f t don t r 0,001 0,01 0,1 1 0 1020304050 ic (a) t ( s) e off e on erec 0 1 2 3 4 5 6 7 0 1020304050 i c (a) e (mws) e off e on erec 0 1 2 3 4 5 6 7 0 1530456075 r g ( ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 1530456075 r g ( ) t ( s) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page7 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 output inverter figure 9. typical reverse recovery time as a figure 10. typical reverse recovery current as a function of igbt turn on gate resistor function of igbt turn on gate resistor output inverter fred diode output inverter fred diode t rr = f (rgon) i rrm = f (rgon) tj = 125 c tj = 125 c v r = 600 v v r = 600 v i f = 25 a i f = 25 a v ge = 15 v v ge = 15 v figure 11. typical reverse recovery charge as a figure 12. typical rate of fall of forward function of igbt turn on gate resistor and reverse recovery current as a output inverter fred diode function of igbt turn on gate resistor q rr = f (rgon) output inverter fred diode di0/dt,direc/dt = f (rgon) tj = 125 c tj = 125 c v r = 600 v v r = 600 v i f = 25 a i f = 25 a v ge = 15 v v ge = 15 v 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0 1530456075 r gon ( ) t rr ( s) 0 5 10 15 20 25 30 35 40 0 1530456075 r gon ( ) irr m (a) 0 1 2 3 4 5 6 7 0 1530456075 r gon ( ) q rr ( c) di0/dt direc/dt 0 200 400 600 800 1000 1200 1400 1600 0 1530456075 r gon ( ) di rec / dt (a/ s) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page8 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 output inverter figure 13. igbt transient thermal impedance figure 14. fred transient thermal impedance as a function of pulse width as a function of pulse width z th jh = f(tp) z th jh = f(tp) parameter: d = tp / t rthjh = 1,25 k/w parameter: d = tp / t rthjh = 1,71 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,05 2,1e+01 0,06 1,9e+01 0,13 1,5e+00 0,16 1,2e+00 0,61 2,0e-01 0,65 1,8e-01 0,33 5,3e-02 0,48 4,7e-02 0,10 7,0e-03 0,23 7,4e-03 0,05 4,9e-04 0,15 8,3e-04 0,05 1,2e-04 0,09 4,7e-04 0,00 0,0e+00 0,06 1,4e-04 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page9 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 output inverter fi gure 15 . power dissipation as a fi gure 16 . collector current as a function of heatsink temperature function of heatsink temperature output inverter igbt output inverter igbt p tot = f (th) i c = f (th) parameter: tj = 150c parameter: tj = 150c v ge = 15 v fi gure 17 . power dissipation as a fi gure 18 . forward current as a function of heatsink temperature function of heatsink temperature output inverter fred output inverter fred p tot = f (th) i f = f (th) parameter: tj = 150c parameter: tj = 150c 0 25 50 75 100 125 150 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 25 30 35 40 0 50 100 150 200 th ( o c) i c (a) 0 20 40 60 80 100 120 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 25 30 35 40 0 50 100 150 200 th ( o c) i f (a) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page10 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 brake fi gure 19 . typical output characteristics fi gure 20 . typical output characteristics brake igbt brake igbt ic= f(v ce ) ic= f(v ce ) parameter: tp = 250 us tj = 25 c parameter: tp = 250 us tj = 125 c v ge parameter: from: 7 v to 17 v v ge parameter: from: 7 v to 17 v in 1 v steps in 1 v steps figure 21. typical transfer characteristics figure 22. typical diode forward current as brake igbt a function of forward voltage ic= f(v ge ) brake fred i f =f(v f ) parameter: tp = 250 us v ce = 10 v parameter: tp = 250 us 0 10 20 30 40 50 60 012345 v ce (v) i c (a) v ge =17v v ge =7v 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 v ge (v) i c (a) tj=125c tj= 25c 0 10 20 30 40 50 60 0 0,5 1 1,5 2 2,5 3 v f (v) i f (a) tj=125c tj= 25c 0 10 20 30 40 50 60 012345 v ce (v) i c (a) v ge =17v v ge =7v miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page11 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 brake figure 23. typical switching energy losses figure 24. typical switching energy losses as a function of collector current as a function of gate resistor brake igbt brake igbt e = f (ic) e = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v rgon = 36 ic = 25 a rgoff = 36 figure 25. typical switching times as a figure 26. typical switching times as a function of collector current function of gate resistor brake igbt brake igbt t = f (ic) t = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v rgon = 36 ic = 25 a rgoff = 36 t doff t f t don t r 0,001 0,01 0,1 1 0 1020304050 ic (a) t ( s) e off e on erec 0 1 2 3 4 5 6 7 0 1020304050 i c (a) e (mws) e off e on erec 0 1 2 3 4 5 6 7 0 1530456075 r g ( ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 1530456075 r g ( ) t ( s) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page12 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 brake figure 27. igbt transient thermal impedance figure 28. fred transient thermal impedance as a function of pulse width as a function of pulse width z th jh = f(tp) z th jh = f(tp) parameter: d = tp / t rthjh = 1,01 k/w parameter: d = tp / t rthjh = 1,54 k/w figure 29. power dissipation as a figure 30. collector current as a function of heatsink temperature function of heatsink temperature brake igbt brake igbt p tot = f (th) i c = f (th) parameter: tj = 150c parameter: tj = 150c v ge = 15 v t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 0 20 40 60 80 100 120 140 160 0 50 100 150 200 th ( o c) p tot (w) th ( o c) i c (a) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page13 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 brake figure 31. power dissipation as a figure 32. forward current as a function of heatsink temperature function of heatsink temperature brake fred brake fred p tot = f (th) i f = f (th) parameter: tj = 150c parameter: tj = 150c 0 20 40 60 80 100 120 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 25 30 35 40 0 50 100 150 200 th ( o c) i f (a) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page14 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 input rectifier bridge figure 33. typical diode forward current as figure 34. diode transient thermal impedance a function of forward voltage as a function of pulse width rectifier diode i f =f(v f )z th jh = f(tp) parameter: tp = 250 us parameter: d = tp / t rthjh = 1,39 k/w figure 35. power dissipation as a figure 36. forward current as a function of heatsink temperature function of heatsink temperature rectifier diode rectifier diode p tot = f (th) i f = f (th) parameter: tj = 150c parameter: tj = 150c 0 10 20 30 40 50 60 70 80 0 0,4 0,8 1,2 1,6 2 v f (v) i f (a) tj=125c tj= 25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 0 20 40 60 80 100 120 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 th ( o c) i f (a) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page15 power.switches@tycoelectronics.com copyright by vincotech revision:1
v23990-k229-a-pm preliminary datasheet miniskiip ? 2nd gen. pim size 2, 1200v / 25 a v23990-k229-a-01-14 thermistor figure 37. typical ptc characteristic as afunction of temperature r t = f (t) ptc-typical temperature characteristic 0 500 1000 1500 2000 2500 3000 25 50 75 100 125 150 t (c) r() miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page16 power.switches@tycoelectronics.com copyright by vincotech revision:1

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