2SD2136 transistor (npn) features power dissipation p cm : 1.25 w (tamb=25 ) collector current i cm : 3 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 1 ma, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic= 30 ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e = 1m a, i c =0 6 v collector cut-off current i cbo v cb = 60 v, i e =0 200 a emitter cut-off current i ebo v eb = 6 v, i c =0 1 ma h fe(1) v ce = 4 v, i c = 1 a 40 250 dc current gain h fe(2) v ce = 4 v, i c =3a 10 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 375 ma 1.2 v base-emitter voltage v be v ce = 4 v, i c = 3 a 1.8 v transition frequency f t v ce = 5 v, i c = 0.1 a, f= 200 mhz 30 mhz turn-on time t on 0.5 s storage time t stg 2.5 s switch time fall time t f i c =1a, i b1 =0.1a, i b2 =-0.1a 0.4 s classification of h fe(1) rank p q r range 40-90 70-150 120-250 1 2 3 to-126 1. emitter 2. collector 3. base 2SD2136 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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