SGL50N60RUFD 600 v, 50 a short circuit rated igbt april 2013 ?1999 fairchild semiconductor corporation 1 www.fairchildsemi.com SGL50N60RUFD rev. c0 SGL50N60RUFD 600 v, 50 a short circuit rated igbt general description fairchild ? ?s rufd series of insulated gate bipolar transistors (igbts) provide low conduction and switching losses as well as short circuit ruggedness. the rufd series is designed for applicati ons such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? 50 a, 600 v, t c = 100c ? low saturation voltage: v ce (sat) = 2.2 v @ i c = 50 a ? typical fall time. . . . . . . . . .261ns at t j = 125c ? high speed switching ? high input impedance ? short circuit rating absolute maximum ratings t c = 25 ? c unless otherwise noted symbol description SGL50N60RUFD unit v ces collector-emitter voltage 600 v v ges gate-emitter voltage ? 20 v i c collector current @ t c = 25 ? c 80 a collector current @ t c = 100 ? c 50 a i cm (1) pulsed collector current 150 a i f diode continuous forward current @ t c = 100 ? c 30 a i fm diode maximum forward current 90 a t sc short circuit withstand time @ t c = 100 ? c 10 us p d maximum power dissipation @ t c = 25 ? c 250 w maximum power dissipation @ t c = 100 ? c 100 w t j operating junction temperature -55 to +150 ? c t stg storage temperature range -55 to +150 ? c t l maximum lead temp. for soldering ? purposes, 1/8? from case for 5 seconds 300 ? c notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction-to-case -- 0.5 ? c/w r ? jc (diode) thermal resistance, junction-to-case -- 1.0 ? c/w r ? ja thermal resistance, junction-to-ambient -- 25 ? c/w applications motor control, ups, general inverter. g c e to-264 g c e g c e
?1999 fairchild semiconductor corporation 2 www.fairchildsemi.com SGL50N60RUFD rev. c0 SGL50N60RUFD 600 v, 50 a short circuit rated igbt electrical characteristics of the igbt t c = 25 ? c unless otherwise noted symbol parameter test conditions min. typ. max. unit ? off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ ? c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na ? on characteristics v ge(th) g-e threshold voltage ic = 50ma, v = v ge 5.0 6.0 8.5 v v ce(sat) collector to emitter ? saturation voltage i c = 50a , v ge = 15v -- 2.2 2.8 v i c = 80a , v ge = 15v -- 2.5 -- v ? dynamic characteristics c ies input capacitance v ce =30v , v ge = 0v, f = 1mhz -- 3311 -- pf c oes output capacitance -- 399 -- pf c res reverse transfer capacitance -- 139 -- pf ? switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 50a, r g = 5.9 ? , v ge = 15v, inductive load, t c = 25? c -- 26 -- ns t r rise time -- 89 -- ns t d(off) turn-off delay time -- 66 100 ns t f fall time -- 118 200 ns e on turn-on switching loss -- 1.68 -- mj e off turn-off switching loss -- 1.03 -- mj e ts total switching loss -- 2.71 3.8 mj t d(on) turn-on delay time v cc = 300 v, i c = 50a, r g = 5.9 ? , v ge = 15v, inductive load, t c = 125 ? c -- 28 -- ns t r rise time -- 91 -- ns t d(off) turn-off delay time -- 68 110 ns t f fall time -- 261 400 ns e on turn-on switching loss -- 1.7 -- mj e off turn-off switching loss -- 2.31 -- mj e ts total switching loss -- 4.01 5.62 mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 ? c 10 -- -- us q g total gate charge v ce = 300 v, i c = 50a, v ge = 15v -- 145 210 nc q ge gate-emitter charge -- 25 35 nc q gc gate-collector charge -- 70 100 nc l e internal emitter inductance measured 5mm from pkg -- 18 -- nh electrical characteristics of diode t c = 25 ? c unless otherwise noted symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 30a t c = 25? c -- 1.9 2.8 v t c = 100 ? c -- 1.8 -- t rr diode reverse recovery time i f = 30a, di/dt = 200 a/us t c = 25? c -- 70 100 ns t c = 100 ? c -- 140 -- i rr diode peak reverse recovery current t c = 25? c -- 6 7.8 a t c = 100 ? c -- 8 -- q rr diode reverse recovery charge t c = 25? c -- 200 360 nc t c = 100 ? c -- 580 -- ce
?1999 fairchild semiconductor corporation 3 www.fairchildsemi.com SGL50N60RUFD rev. c0 SGL50N60RUFD 600 v, 50 a short circuit rated igbt fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 20 40 60 80 100 120 140 20v 12v 15v v ge = 10v common emitter t c = 25
?1999 fairchild semiconductor corporation 4 www.fairchildsemi.com SGL50N60RUFD rev. c0 SGL50N60RUFD 600 v, 50 a short circuit rated igbt fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110 0 1000 2000 3000 4000 5000 6000 7000 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25
?1999 fairchild semiconductor corporation 5 www.fairchildsemi.com SGL50N60RUFD rev. c0 SGL50N60RUFD 600 v, 50 a short circuit rated igbt 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] ?
?1999 fairchild semiconductor corporation 6 www.fairchildsemi.com SGL50N60RUFD rev. c0 SGL50N60RUFD 600 v, 50 a short circuit rated igbt fig 19. reverse recovery current fig 18. forward characteristics fig 20. stored charge fig 21. reverse recovery time 1 10 100 01234 t c = 25
?1999 fairchild semiconductor corporation 7 www.fairchildsemi.com SGL50N60RUFD rev. c0 SGL50N60RUFD 600 v, 50 a short circuit rated igbt mechanical dimensions to-264a03 dimensions in millimeters
?1999 fairchild semiconductor corporation 8 www.fairchildsemi.com SGL50N60RUFD rev. c0 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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SGL50N60RUFD 600 v, 50 a short circuit rated igbt
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