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SB220 9425G 3216C SWF634 BAS11 B8806 Z3PK845H BA100
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  circuit ? outline drawing dimension:mm ?? aximum ratings ?R grade ? parameter ? symbol PHT250N16 g unit ??`?R repetitive peak off-state voltage v drm 1600 v ???`?R non repetitive peak off-state voltage v dsm 1700 v ??`?R repetitive peak reverse voltage v rrm 1600 v ???`?R non repetitive peak reverse voltage v rsm 1700 v ? parameter ? symbol conditions max.rated value g unit ? average on-state current io (av) ? 180 ? tc=84 half sine wave 250 a g rms on-state current i t(rms) 390 a ` surge on-state current i tsm 50hz ??1 ?????? half sine wave, 1p ulse, non-repetitive 4000 a \rge i squared t i 2 t 2 10ms 80000 a 2 R?N critical rate of rise of turned-on current di/dt v d =2/3 v drm , i tm =2 ? io, tj=125 i g =300ma, di g /dt =0.2a/ s 100 a/ s ?``p? peak gate power p gm 5 w ?`p? average gate power p g(av) 1 w ?`` peak gate current i gm 2 a ?``?R peak gate voltage v gm 10 v ?``?R peak gate reverse voltage v rgm 5 v ??? operating junction temperature range tjw -40 +125 ?? storage temperature range tstg -40 +125 ~F?R isolation voltage viso ??`g ac 1 g terminal to base, ac 1min. 2500 v ?` mounting ????????????T greased m5 2.4 2.8 n ? m ?? mounting torque ? terminal m5 2.4 2.8 n ? m ( ? ) `??`ggx 5mm ?? ul1557,400v ??? ????gx? . the striking distance between th e anode and the cathode of thi s module is 5mm, filing wit h ul1557, but when used by th e system of 400v ac, take a n enough striking distance and wire. PHT250N16 250 vg 1600 olts
?? electrical c haracter istics ? maximum value ? parameter ? symbol conditions min ? typ max g unit ?` peak off-state current i dm tj = 125 , v dm = v drm 80 ma ?` peak reverse current i rm tj = 125 , v rm = v rrm 80 ma ?`?R peak off-state voltage v tm tj = 25 , i tm = 800a 1.5 v tj = 40 300 tj = 25 150 ??` gate current to trigger i gt v d = 6 v, i t = 1a tj = 125 80 ma tj = 40 5 tj = 25 3 ??`?R gate voltage to trigger v gt v d = 6 v, i t = 1a tj = 125 2 v ???`?R gate non-trigger voltage v gd tj =125 , v d = 2/3 v drm 0.25 v R?R?N critical rate of rise of off-state voltage dv/dt tj =125 , v d = 2/3 v drm 500 v/ s `???rg turn-off time t q tj =125 , i tm = io, v d = 2/3 v drm dv/dt = 20v/ s, v r = 100v, \ di/dt = 20a/ s 200 s `??rg turn-on time t gt 6 s Wrg delay time t d 2 s ?rg rise time t r tj =25 , v d = 2/3 v drm i g = 300ma, di g /dt = 0.2a/ s 4 s ? latching current i l tj =25 150 ma holding current i h tj =25 100 ma ? thermal resistance r th(j-c) ??`g junction to case 0.1 /w ?? thermal resistance r th(c-f) ??? - ???g????????????T case to fin, greased 0.1 /w | s 250 g `?? value per 1 arm. approximate weight
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