CZDM1003N surface mount silicon n-channel enhancement-mode mosfet description: the central semiconductor CZDM1003N is a 3.0 amp, 100 volt silicon n-channel enhancement- mode mosfet, designed for motor control and relay driver applications. this mosfet offers high current, low r ds(on) , and low gate charge. marking: full part number maximum ratings: (t a =25c) symbol units drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current (steady state) i d 3.0 a maximum pulsed drain current, tp=10s i dm 12 a power dissipation p d 2.0 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 62.5 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =100v, v gs =0 1.0 a bv dss v gs =0, i d =250a 100 v v gs(th) v gs =v ds , i d =250a 2.0 4.0 v v sd v gs =0, i s =3.0a 1.3 v r ds(on) v gs =10v, i d =2.0a 70 150 m c rss v ds =25v, v gs =0, f=1.0mhz 55 70 pf c iss v ds =25v, v gs =0, f=1.0mhz 705 975 pf c oss v ds =25v, v gs =0, f=1.0mhz 55 80 pf q g(tot) v ds =80v, v gs =10v, i d =9.2a 15 nc q gs v ds =80v, v gs =10v, i d =9.2a 3.0 nc q gd v ds =80v, v gs =10v, i d =9.2a 5.5 nc t on v dd =50v, v gs =10v, i d =9.2a 40 80 ns t off r g =18 60 155 ns features: ? low r ds(on) ? high current ? low gate charge applications: ? motor control ? relay driver ? dc-dc converters sot-223 case r1 (21-january 2013) www.centralsemi.com
CZDM1003N surface mount silicon n-channel enhancement-mode mosfet pin configuration lead code: 1) gate 2) drain 3) source 4) drain sot-223 case - mechanical outline 12 4 3 marking: full part number www.centralsemi.com r1 (21-january 2013)
CZDM1003N surface mount silicon n-channel enhancement-mode mosfet typical electrical characteristics r1 (21-january 2013) www.centralsemi.com
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