BC347 transistor (npn) features power dissipation p cm: 0.3 w (tamb=25 ) collector current i cm : 0.1 a collector-base voltage v (br)cbo : 50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 45 v emitter-base breakdown voltage v (br)ebo i e = 100a, i c =0 5 v collector cut-off current i cbo v cb =50v, i e =0 0.1 a collector cut-off current i ceo v ce =35v, i b =0 0.1 a emitter cut-off current i ebo v eb = 3v, i c =0 0.1 a dc current gain h fe v ce =5 v, i c = 2ma 40 450 collector-emitter saturation voltage v cesat i c = 10ma, i b = 1ma 0.3 v base-emitter saturation voltage v besat i c = 10ma, i b = 1ma 1 v transition frequency f t v ce =5v, i c =10ma, f=30mhz 125 mhz 1 2 3 to-92 1. emitter 2. base 3. collector b c347 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
