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to - 220 -3l 1. base 2. collector 3. emitter to-220 -3l plastic-encapsulate transistors 2SB861 transistor (pnp) features z low frequency power amplifier color tv vertical deflection output maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-5ma,i e =0 -200 v collector-emitter breakdown voltage v (br)ceo * i c =-50ma,i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e =-5ma,i c =0 -6 v collector cut-off current i cbo v cb =-120v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 a h fe(1) v ce =-4v, i c =-50ma 60 200 dc current gain h fe(2) * v ce =-10v, i c =-500ma 60 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -3 v base-emitter voltage v be v ce =-4v, i c =-50ma -1 v collector output capacitance c ob v cb =-100v,i e =0, f=1mhz 30 pf *pulse test classification of h fe(1) rank b c range 60-120 100-200 symbol parameter value unit v cbo collector-base voltage -200 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -6 v i c collector current -2 a p c collector power dissipation 1.8 w r ja thermal resistance from junction to ambient 69 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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