KI4511DY features trenchfet power mosfet absolute maximum ratings t a =25 10 sec steady state 10 sec steady state drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 9.6 7.2 -6.2 -4.6 a t a =70 7.7 5.8 -4.9 -3.7 a pulsed drain current i dm a continuous source current (diode conduction)* i s 1.7 0.9 -1.7 0.9 a maximum power dissipation* t a =25 21.121.1w t a =70 1.3 0.7 1.3 0.7 w operating junction and storage temperature range t j ,t stg *surface mounted on fr4 board;t 10 sec. 40 -40 -55to150 symbol parameter i d p d unit 20 16 -20 12 n-channel p-channel thermal resistance ratings t a =25 typ max typ max t 10 sec 50 62.5 50 62.5 steady state 85 110 90 110 maximum junction-to-foot steady state r thjc 30 40 30 35 *surface mounted on fr4 board. maximum junction-to-ambient* r thja /w n-channel p-channel symbol parameter unit smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d =250 a n-ch 0.6 1.8 v ds =v gs ,i d =-250 a p-ch -0.6 1.4 v ds =0vv gs = 16 v n-ch 100 v ds =0vv gs = 12 v p-ch 100 v ds =20v,v gs =0v n-ch 1 v ds =-16v,v gs =0v p-ch -1 v ds =20v,v gs =0v,t j =55 n-ch 5 v ds =-16v,v gs =0v,t j =55 p-ch -5 v ds =5 v, v gs = 10 v n-ch 40 v ds =-5 v, v gs =-4.5v p-ch -40 v gs =10v,i d = 9.6a n-ch 0.0115 0.0145 v gs =-4.5v,i d = -6.2a p-ch 0.022 0.033 v gs =4.5v,i d = 8.6a n-ch 0.0135 0.017 v gs =-2.5v,i d = -5a p-ch 0.035 0.050 v ds =15v,i d =9.6a n-ch 33 v ds =-15v,i d = -6.2a p-ch 17 i s =1.7a,v gs =0v n-ch 0.8 1.2 i s = -1.7a, v gs =0v p-ch ?0.8 -1.2 n-channel n-ch 11.5 18 v ds =10v,v gs =4.5v,i d =9.6a p-ch 17 20 n-ch 3.7 p-channel p-ch 4.1 v ds =-10v,v gs =-4.5v,i d = -6.2a n-ch 3.3 p-ch 4.3 n channel n-ch 12 20 v dd =10v,r l =10 p-ch 25 40 i d =1a,v gen =10v,r g =6 n-ch 12 20 p-ch 30 45 p-channel n-ch 55 85 v dd =-10v,r l =10 p-ch 70 105 i d =-1a,v gen =-4.5v,r g =6 n-ch 15 25 p-ch 50 75 i f =1.7a,d i /d t =100a/ s n-ch 50 100 i f =-1.7a,d i /d t =100a/ s p-ch 40 80 * pulse test; pulse width 300 s, duty cycle 2%. rise time turn off delay time r ds(on) drainsourceonstateresistance* diode forward voltage* total gate charge gate source charge gate drain charge v sd q gs q gd i d(on) g fs forward transconductance* i dss testconditons q g gate threshold voltage gate body leakage zero gate voltage drain current on state drain currenta v na a v gs( th) i gss a s v nc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time KI4511DY smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
|
