features tr1: low v ce(sat) di : low v f sm all pack age absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit collector-ba se voltage v cbo 15 v collector-emit ter voltage v ceo 12 v em itt er- base voltage v ebo 6 v collector current i c 1.5 a pow er dissi pation p d 200 m w oper ating and storage an d tem pera ture ran ge t j , t stg -40 to +125 paramet er sym bol rating unit rea k rev erse voltage v rm 25 v rev erse voltage (dc) v r 20 v avera ge rectifi ed forw ard curre nt i f 700 m a forw ard curre nt s urge peak (60hz, 1 ) i fsm 3 a oper ating and storage an d tem pera ture ran ge t j , t stg -40 to +125 tr1 di2 1 23 4 5 unit: mm tr1 di2 (1) (2) (3) (4) (5) sales@twtysemi.com 1 of 3 http://www.twtysemi.com s m d ty p e t r a n s i s t o r s fm l10 s m d ty p e i c s m d ty p e t r a n s i s t o r s s m d ty p e d i o d e s smd type transistors smd type transistors smd type transistors product specification 4008-318-123
s m d ty p e el ectrical character istics t a = 2 5 paramet er sym bol test c onditions min typ ma x unit collector-base breakdow n voltage v (br)cbo i c = 10 a, i e = 0 15 v collector-em itt er breakdow n voltage v (br)ceo i c = 1 m a, i b = 0 12 v em itt er- base b reakdow n voltage v (br)ebo i c = 10 a, i c = 0 6 v collector cutof f c urr ent i cbo v cb =15v, i e =0 100 na em itt er cutoff c urr ent i ebo v eb =6v, i c =0 100 na dc curre nt gain h fe v ce =2v, i c = 200ma 270 680 collect or- em itt er saturation voltage * v ce(sat) i c = 500 m a; i b = 25 m a 0.2 v transition frequency f t i c = 200 m a; v ce = 2 v ; f = 100 mh z 400 mh z collector output capacit ance c ob v cb =10v, i e =0a, f =1m hz 12 pf forw ard v oltage v f i f =700 m a 490 m v rev erse current i r v r =20v 200 a * pulse t est: puls e w idth 300s, duty cy cle 2.0%. transistor tr1 di2 mark ing mar king l10 t r a n s i s t o r s sales@twtysemi.com 2 of 3 http://www.twtysemi.com s m d ty p e t r a n s i s t o r s fm l10 s m d ty p e i c s m d ty p e t r a n s i s t o r s s m d ty p e d i o d e s smd type transistors smd type transistors smd type transistors product specification 4008-318-123
s m d ty p e t r a n s i s t o r s tr 1 0.001 0.01 0.1 1 1 0 collector current : i c (a) fig.1 dc current gain vs. collector current 10 dc current gain : h fe 100 1000 ta = 25 c ta = ? 40 c ta = 100 c v ce = 2v pulsed 0.001 0.01 0.1 1 1 0 collector current : i c (a) fig.2 collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 0.001 base saturation voltage : v be (sat) (v) collector saturation voltage : v ce (sat) (v) 0.1 0.01 10 1 ta = 25 c ta = 25 c ta = ? 40 c ta = ? 40 c ta = 100 c ta = 100 c v be(sat) v ce(sat) i c /i b = 20 pulsed i c /i b = 20/1 pulsed 0.001 0.01 0.1 1 1 0 collector current : i c (a) fig.3 collector-emitter saturation voltage vs. collector current 0.001 collector saturation voltage : v ce(sat) (v) 0.01 0.1 1 ta = 25 c v ce = 2v i c /i b = 50/1 i c /i b = 20/1 i c /i b = 10/1 0 0.001 0.01 0.1 1 10 base to emitter voltage : v be (v) fig.4 grounded emitter propagation characteristics collector current : i c (a) 1.5 1.0 0.5 v ce = 2v pulsed ta = 25 c ta = ? 40 c ta = 100 c ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 emitter current : i e (a) fig.5 gain bandwidth product vs. emitter current 10 transition frequency : f t (mhz) 100 1000 v ce = 2v ta = 25 c pulsed 0.001 0.01 0.1 1 collector current : i c (a) fig.6 switching time 1 switching time : (ns) 10 100 1000 ic=20 ib1=-20ib2 ta = 25 c f = 100mhz tstg tdon tr tf 0.1 1 1 0 100 emitter to base voltage : v eb (v) collector to base voltage : v cb (v) fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 1 emitter input capacitance : cib (pf) collector output capacitance : cob (pf) 10 100 cib cob i e = 0a f = 1mhz ta = 25 c di2 0.1m 1m 10m 100m 1 10 for w ard current : i f (a) for w ard v o l t a ge : v f (v) 0 0.1 0.2 0.3 0.4 0.5 0.6 fig.8 forward characteristics ta = 125 c ta = ? 25 c ta = 25 c 0.1 1 10 100 1m 10m 100m 1000m reverse current : i r (a) reverse v o l t a ge : v r (v) 01 0 20 30 40 50 60 70 fig.9 reverse characteristics ta = 25 c ta = ? 25 c ta = 125 c di2 fm l10 t y pical ch aracteristics sales@twtysemi.com 3 of 3 http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s s m d ty p e d i o d e s smd type transistors smd type transistors smd type transistors product specification 4008-318-123
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