package drawings (unit: mm) the m pa800t has built-in 2 low-voltage transistors which are designed to amplify low noise in the vhf band to the uhf band. features ? low noise nf = 1.9 db typ. @ f = 2 ghz, v ce = 1 v, i c = 3 ma ? high gain |s 21e | 2 = 6.5 db typ. @ f = 2 ghz, v ce = 1 v, i c = 3 ma ? a mini mold package adopted ? built-in 2 transistors (2 2sc4228) ordering information part number quantity packing style m pa800t loose products embossed tape 8 mm wide. pin 6 (q1 (50 pcs) base), pin 5 (q2 base), pin 4 (q2 emitter) face to perforation side of the tape. m pa800t-t1 taping products (3 kpcs/reel) remark if you require an evaluation sample, please contact an nec sales representative. (unit sample quantity is 50 pcs.) absolute maximum ratings (t a = 25 c) parameter symbol rating unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 35 ma total power dissipation p t 150 in 1 element mw 200 in 2 elements note junction temperature t j 150 ?c storage temperature t stg C65 to +150 ?c note 110 mw must not be exceeded in 1 element. m pa800t pin configuration (top view) 2.1?.1
1.25?.1
1 2 3 6 5 4 0.2 ? +0.1 0.65 0.65 1.3 2.0?.2 0.9?.1 0.7 0~0.1 0.15 ? +0.1 654 q 1 q 2 123 pin connections
1. collector (q1)
2. emitter (q1)
3. collector (q2)
4. emitter (q2)
5. base (q2)
6. base (q1)
xy product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 c) parameter symbol condition min. typ. max. unit collector cutoff current i cbo v cb = 10 v, i e = 0 1.0 m a emitter cutoff current i ebo v eb = 1 v, i c = 0 1.0 m a dc current gain h fe v ce = 3 v, i c = 5 ma note 1 80 200 gain bandwidth product f t v ce = 3 v, i c = 5 ma 5.5 80 ghz feed-back capacitance c re v cb = 3 v, i e = 0, f = 1 mhz note 2 0.7 pf insertion power gain (1) |s 21e | 2 v ce = 1 v, i c = 3 ma, f = 2 ghz 4.5 6.5 db insertion power gain (2) |s 21e | 2 v ce = 3 v, i c = 5 ma, f = 2 ghz 5.5 7.5 db noise figure (1) nf v ce = 1 v, i c = 3 ma, f = 2 ghz 1.9 3.2 db noise figure (2) nf v ce = 3 v, i c = 5 ma, f = 2 ghz 1.9 3.2 db notes 1. pulse measurement: pw 350 m s, duty cycle 2 % 2. measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. h fe classification rank kb marking rl h fe value 80 to 200 m pa800t product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
