BFG425W product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
features very high power gain low noise figure high transition frequency emitter is thermal lead low feedback capacitance. applications rf front end wideband applications, e.g. analog and digital cellular telephones, cordless telephones (phs, dect, etc.) radar detectors pagers satellite television tuners (satv) high frequency oscillators. description npn double ty wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter sot343r package. pinning pin description 1 emitter 2 base 3 emitter 4 collector fig.1 simplified outline sot343r. marking code: p5. handbook, halfpage top view msb842 21 4 3 quick reference data symbol parameter conditions min. typ. max. unit v cbo collector-base voltage open emitter -- 10 v v ceo collector-emitter voltage open base -- 4.5 v i c collector current (dc) - 25 30 ma p tot total power dissipation t s 103 c -- 135 mw h fe dc current gain i c = 25 ma; v ce =2v; t j =25 c 5080120 c re feedback capacitance i c = 0; v cb = 2 v; f = 1 mhz - 95 - ff f t transition frequency i c = 25 ma; v ce = 2 v; f = 2 ghz; t amb =25 c - 25 - ghz g max maximum power gain i c = 25 ma; v ce = 2 v; f = 2 ghz; t amb =25 c - 20 - db f noise ?gure i c = 2 ma; v ce = 2 v; f = 2 ghz; g s = g opt - 1.2 - db caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to ty specs.: snw-eq-608, snw-fq-302a and snw-fq-302b. product specification BFG425W 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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