unit: mm sod-323 1.7 +0.1 -0.1 2.6 +0.1 -0.1 1.3 +0.1 -0.1 0.1 +0.05 -0.02 0.475 0.375 0.3 +0.05 -0.05 0.85 +0.05 -0.05 1.0max BAP65-03 features high voltage, current controlled rf resistor for rf switches low diode capacitance low diode forward resistance (low loss) very low series inductance. absolute maximum ratings ta = 25 parameter symbol min max unit continuous reverse voltage v r 30 v continuous forward current i f 100 ma total power dissipation t s 90 p tot 500 mw storage temperature t stg -65 +150 junction temperature t j -65 +150 thermal resistance from junction to soldering point r th j-s 120 k/w product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol conditions typ max unit forward voltage v f i f = 50 ma 0.95 1.1 v reverse leakage current i r v r =20v 20 na v r =0;f=1mhz 0.65 v r =1v;f=1mhz 0.55 0.9 v r =3v;f=1mhz 0.5 0.8 v r = 20v; f = 1 mhz 0.375 i f = 1 ma; f = 100 mhz; note 1 1 i f = 5 ma; f = 100 mhz; note 1 0.65 0.95 i f = 10 ma; f = 100 mhz; note 1 0.56 0.9 i f = 100 ma; f = 100 mhz 0.35 v r =0;f=900mhz 10.2 v r = 0; f = 1800 mhz 5.8 v r = 0; f = 2450 mhz 4.1 v r =1;f=900mhz 0.1 v r = 1; f = 1800 mhz 0.14 v r = 1; f = 2450 mhz 0.18 v r =5;f=900mhz 0.06 v r = 5; f = 1800 mhz 0.1 v r = 5; f = 2450 mhz 0.14 v r = 10; f = 900 mhz 0.06 v r =10;f=1800mhz 0.1 v r =10;f=2450mhz 0.13 v r =100;f=900mhz 0.05 v r = 100; f = 1800 mhz 0.1 v r = 100; f = 2450 mhz 0.14 when switched from i f =10matoi r =6ma; r l =100 ;measured at i r =3ma series inductance l s i f = 100 ma; f = 100 mhz 1.5 nh note 1. guaranteed on aql basis: inspection level s4, aql 1.0. s l charge carrier life time 0.17 diode capacitance c d r d diode forward resistance insertion loss insertion loss insertion loss |s21| 2 |s21| 2 |s21| 2 |s21| 2 |s21| 2 isolation insertion loss db db db pf db db marking marking d3 sales@twtysemi.com 2 of 2 http://www.twtysemi.com BAP65-03 product specification 4008-318-123
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