analog power AM4520H p & n-channel 20-v (d-s) mosfet
v ds (v) i d (a) 6.6 6.2 -5.2 -4.4 symbol nch limit pch limit units v ds 20 -20 v gs 8 8 t a =25c 6.6 -5.2 t a =70c 5 -3.8 i dm 20 -20 i s 2.2 -2.2 a t a =25c 2.1 2.1 t a =70c 1.3 1.3 t j , t stg c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature -55 to 150 v steady state r ja a w c/w parameter thermal resistance ratings continuous drain current a i d power dissipation a p d pulsed drain current b continuous source current (diode conduction) a operating junction and storage temperature range parameter drain-source voltage gate-source voltage absolute maximum ratings (t a = 25c unless otherwise noted) t <= 10 sec 47 @ v gs = 4.5v 55 @ v gs = 2.5v -20 maximum junction-to-ambient a 79 @ v gs = -4.5v 110 @ v gs = -2.5v product summary r ds(on) (m) 20 key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits ? preliminary 1 publication order number: ds_AM4520H_1a
analog power AM4520H parameter symbol test conditions min typ max unit v ds = v gs , i d = 250 ua (n-ch) 1 v v ds = v gs , i d = -250 ua (p-ch) -1 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 8 v, v gs = 0 v (n-ch) 1 v ds = -8 v, v gs = 0 v (p-ch) -1 v ds = 5 v, v gs = 4.5 v (n-ch) 10 a v ds = -5 v, v gs = -4.5 v (p-ch) -10 a v gs = 4.5 v, i d = 5.3 a (n-ch) 47 v gs = 2.5 v, i d = 5 a (n-ch) 55 v gs = -4.5 v, i d = -4.2 a (p-ch) 79 v gs = -2.5 v, i d = -3.8 a (p-ch) 110 v ds = 10 v, i d = 5.3 a (n-ch) 10 s v ds = -10 v, i d = -4.2 a (p-ch) 10 s i s = 1.1 a, v gs = 0 v (n-ch) 0.7 v i s = -1.1 a, v gs = 0 v (p-ch) -0.73 v total gate charge q g 6 gate-source charge q gs 0.9 gate-drain charge q gd 2.1 turn-on delay time t d(on) 7 rise time t r 24 turn-off delay time t d(off) 35 fall time t f 19 input capacitance c iss 439 output capacitance c oss 78 reverse transfer capacitance c rss 68 total gate charge q g 11 gate-source charge q gs 2.8 gate-drain charge q gd 2.7 turn-on delay time t d(on) 10 rise time t r 20 turn-off delay time t d(off) 49 fall time t f 21 input capacitance c iss 683 output capacitance c oss 90 reverse transfer capacitance c rss 75 v gs(th) ua p - channel v ds = -15 v, v gs = 0 v, f = 1 mhz pf nc i d(on) i dss r ds(on) m m p - channel v dd = -10 v, r l = 2.3 , i d = -4.2 a, v gen = -4.5 v, r gen = 6 ns v sd dynamic n - channel v ds = 10 v, v gs = 4.5 v, i d = 5.3 a forward transconductance g fs diode forward voltage p - channel v ds = -10 v, v gs = 4.5 v, i d = -4.2 a nc n - channel v dd = 10 v, r l = 1.8 , i d = 5.3 a, v gen = 4.5 v, r gen = 6 ns n - channel v ds = 15 v, v gs = 0 v, f = 1 mhz pf zero gate voltage drain current drain-source on-resistance static electrical characteristics gate-source threshold voltage on-state drain current ? preliminary 2 publication order number: ds_AM4520H_1a
analog power AM4520H 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics - n-channel 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 2 4 6 8 10 rds(on) - on - resistance( ) id - drain current (a) 2.5v 3.5v,4v,4.5v,6v 3v 2v 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 id - drain current (a) vds - drain - to - source voltage (v) 6v,4.5 v,4v,3.5v 2.5v 2v 3v 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 6 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c i d = 5.3 a 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 100 200 300 400 500 600 700 800 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz 0 2 4 6 8 10 0 1 2 3 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c ? preliminary 3 publication order number: ds_AM4520H_1a
analog power AM4520H 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient typical electrical characteristics - n-channel 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 vgs - gate - to - source voltage (v) qg - total gate charge (nc) i d = 5.3 a v ds = 10 v 0.01 0.1 1 10 100 0.1 1 10 100 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja r ja = 110 c /w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0.2 0.1 0.05 0.02 p( pk ) t 1 t 2 d = 0.5 single pulse 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) ? preliminary 4 publication order number: ds_AM4520H_1a
analog power AM4520H 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics - p-channel 0 0.04 0.08 0.12 0.16 0 2 4 6 8 rds(on) - on - resistance( ) id - drain current (a) 2v 3.5v,4v,4.5v,6v 2.5v 3v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 id - drain current (a) vds - drain - to - source voltage (v) 6v,4.5v,4v,3.5v,3v 2v 2.5v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c i d = - 4.2 a 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz ? preliminary 5 publication order number: ds_AM4520H_1a
analog power AM4520H 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation typical electrical characteristics - p-channel 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient 0 1 2 3 4 5 6 7 8 0 5 10 15 20 vgs - gate - to - source voltage (v) qg - total gate charge (nc) i d = - 4.2 a v ds = - 10 v 0.01 0.1 1 10 100 0.1 1 10 100 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja r ja = 110 c /w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0.2 0.1 0.05 0.02 p( pk ) t 1 t 2 d = 0.5 single pulse 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) ? preliminary 6 publication order number: ds_AM4520H_1a
analog power AM4520H package information note: 1. all dimension are in mm. 2. package body sizes exclude mold flash, protrusion or gate burrs. mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 3. package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 4. the package top may be smaller than the package bottom. 5. dimension "b" does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of "b" dimension at maximum material condition. the dambar cannot be located on the lower radius of the foot. ? preliminary 7 publication order number: ds_AM4520H_1a
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