1 p-channel 20-v (d-s) mosfet features ? halogen-free acco r ding to iec 61249-2-21 definition ? trenchfet ? power mosfet ? compl iant to rohs directive 2002/95/ec product summary v ds (v) r ds(on) ( )i d (a) - 20 0.040 at v gs = - 10 v - 6.6 0.045 at v gs = - 6 v - 5.0 0. 050 at v gs = - 4.5 v - 4.4 sd sd s d g d so-8 5 6 7 8 t op vie w 2 3 4 1 s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c , unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds - 20 v gate-source v o ltage v gs 12 contin uous drain current (t j = 150 c) a t a = 25 c i d - 6.6 - 4.1 a t a = 70 c - 4.6 - 3.2 pulsed dra in current i dm - 30 continuous source current (d iode conduction) a i s - 2.3 - 1.1 max i mum power dissipation a t a = 25 c p d 2.5 1.3 w t a = 70 c 1.6 0.8 oper ating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance rat i ngs paramet e r symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 40 50 c/w steady state 70 95 maxim um j unction-to-foot (drain) steady state r thjf 24 30 www.din-tek.jp dt m 94 25
2 not e s: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c , unless otherwise noted para meter symbol test conditions min. typ. a max. unit static gate th reshold v oltage v gs(th) v ds = v gs , i d = - 250 a - 1 . 0 - 3.0 v gate-bo dy lea kage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v , v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 70 c - 5 on-state dr ain current b i d(on) v ds - 10 v, v gs = - 10 v - 20 a v ds - 5 v, v gs = - 4.5 v - 5 drain-source on-state re sista nce b r ds(o n ) v gs = - 10 v , i d = - 5.8 a 0.033 0.040 v gs = - 6 v , i d = - 5 a 0.043 0.045 v gs = - 4.5 v , i d = - 4.4 a 0.056 0.050 f orward transconductance b g fs v ds = - 15 v, i d = - 5.8 a 13 s diode forw a rd voltage b v sd i s = - 2 .3 a, v gs = 0 v - 0.8 - 1.1 v dy nam i c a to tal gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 3.5 a 16 24 nc gate-source charge q gs 2.3 gate-dr a in charge q gd 4.5 ga te re sistance r g 8.8 tu r n - o n d e l ay t i m e t d(o n) v dd = - 15 v, r l = 15 i d ? - 1 a, v gen = - 10 v , r g = 6 14 2 5 ns rise time t r 14 2 5 t urn-off delay time t d(off) 42 7 0 fa ll time t f 30 5 0 source-dr ain re v erse re co very time t rr i f = - 1.2 a, di/dt = 100 a/s 30 6 0 www.din-tek.jp dt m 94 25
3 typica l c har ac teri stic s 25 c, unless otherwise noted output charac teristic s on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 01234 5 v gs = 10 v thr u 6 v v ds - drain-to-source v oltage (v) i d - drain current (a) 3 v 5 v 4 v r ds(on) - on-resistance ( ) 0.00 0.03 0.06 0.09 0.12 0.15 04 81 2 1620 i d - drain current (a) v gs = 6 v v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0.0 3.2 6.4 9.6 12.8 16.0 v ds = 15 v i d = 3.5 a v gs - gate-to-source v oltage (v) q g - t otal gate charge (nc) transfer characteristics cap acitance on-resistance vs. junction temperature 0 5 10 15 20 25 30 01234 5 t c = 125 c - 55 c 25 c v gs - gate-to-source v oltage (v) i d - drain current (a) 0 220 440 660 880 1100 0 5 10 15 20 25 30 v ds - drain-to-source v oltage (v) c rss c - capacitance (pf) c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 5.7 a t j - j unction temperature (c) r ds( on) - on-resistance (nor maliz ed) www.din-tek.jp dt m 94 25
4 ty pi cal ch ara cteristics 25 c , unless otherwise noted sour ce-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c 50 1 v sd - source-to-drain v oltage (v) i s - source current (a) 10 t j = 25 c - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a var iance (v) v gs(th) t j - t emperature (c) on-resistan ce vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.04 0.08 0.12 0.16 0.20 0 24681 0 i d = 5.8 a r ds(on) - on-resistance ( ) v gs - gate-to-source v oltage (v) 0 90 150 30 60 po w er (w) time (s) 120 11 0 10 -1 10 - 2 10 - 3 safe operating a r ea, junction-to-foot 100 1 0.1 1 10 100 0.01 10 100 ms 0.1 t c = 25 c single pulse 1 s 10 s dc 10 ms 1 ms limited by r ds(on) * v ds - drain-to-source v oltage (v) * v ds > minimum v gs at which r ds(on) is specified i d - drain current (a) www.din-tek.jp dt m 94 25
5 typica l c har ac teri stic s 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wav e pulse duration (s) normaliz ed ef f ective transient thermal impedance 1. duty cycle , d = 2. per unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm nor m alized thermal transient impedance, junction-to-foot 10 - 3 10 - 2 11 0 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wav e pulse duration (s) normaliz ed ef f ective transient thermal impedance www.din-tek.jp dt m 94 25
1 di m millimeter s inc hes min ma x min max a 1 .35 1.75 0.053 0.069 a 1 0 .10 0.20 0.004 0.008 b 0.35 0.51 0.01 4 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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