BSD816SN optimos?2 small-signal-transistor features ? n-channel ? enhancement mode ? ultra logic level (1.8v rated) ? avalanche rated ? qualified according to aec q101 ? 100% lead-free; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c 1.4 a t a =70 c 1.1 pulsed drain current i d,pulse t a =25 c 5.6 avalanche energy, single pulse e as i d =1.4 a, r gs =25 ? 3.7 mj reverse diode d v /d t d v /d t i d =1.4 a, v ds =16 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 8 v power dissipation 1) p tot t a =25 c w operating and storage temperature t j , t stg -55 ... 150 c esd class jesd22-a114 -hbm 0 (<250v) soldering temperature 260 c iec climatic category; din iec 68-1 55/150/56 value 0.5 pg-sot363 3 2 1 6 5 4 type package tape and reel information marking lead free packing BSD816SN pg-sot363 l6327: 3000 pcs/ reel xas yes non dry v ds 20 v r ds(on),max v gs =2.5 v 160 m ? v gs =1.8 v 240 i d 1.4 a product summary rev 2.2 page 1 2010-03-25
BSD816SN parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - ambient r thja minimal footprint 1) - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 - - v gate threshold voltage v gs(th) v ds =v gs , i d =3.7 a 0.3 0.55 0.95 drain-source leakage current i dss v ds =20 v, v gs =0 v, t j =25 c --1 a v ds =20 v, v gs =0 v, t j =150 c - - 100 gate-source leakage current i gss v gs =8 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =1.8 v, i d =0.44 a - 158 240 m ? v gs =2.5 v, i d =1.4 a - 112 160 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =1.1 a 4.8 - s values 1) performed on 40mm 2 fr4 pcb. the traces are 1mm wide 70 m thick and 20mm long; they are present on both sides of the pcb. rev 2.2 page 2 2010-03-25
BSD816SN parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 126 180 pf output capacitance c oss -4767 reverse transfer capacitance c rss -710 turn-on delay time t d(on) - 5.3 - ns rise time t r - 9.0 - turn-off delay time t d(off) -11- fall time t f - 2.2 - gate charge characteristics gate to source charge q gs - 0.2 - nc gate to drain charge q gd - 0.2 - gate charge total q g - 0.6 - gate plateau voltage v plateau - 1.6 - v reverse diode diode continous forward current i s - - 0.5 a diode pulse current i s,pulse --6 diode forward voltage v sd v gs =0 v, i f =1.4 a, t j =25 c - 0.87 1.1 v reverse recovery time t rr - 8.1 - ns reverse recovery charge q rr - 1.4 - nc v r =10 v, i f =1.4 a, d i f /d t =100 a/s t a =25 c values v gs =0 v, v ds =10 v, f =1 mhz v dd =10 v, v gs =2.5 v, i d =1.4 a, r g =6 ? v dd =10 v, i d =1.4 a, v gs =0 to 2.5 v rev 2.2 page 3 2010-03-25
BSD816SN 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs 2.5 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 -2 10 -1 10 0 10 1 10 2 10 -3 10 -2 10 -1 10 0 10 1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 2 10 1 10 0 10 -1 t p [s] z thja [k/w] 0 0.125 0.25 0.375 0.5 0 40 80 120 160 t a [c] p tot [w] 0 0.25 0.5 0.75 1 1.25 1.5 0 40 80 120 160 t a [c] i d [a] rev 2.2 page 4 2010-03-25
BSD816SN 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c 0 2 4 6 8 10 01234 i d [a] g fs [s] 25 c 150 c 0 0.5 1 1.5 01122 v gs [v] i d [a] 1.2 v 1.3 v 1.4 v 1.5 v 1.6 v 1.8 v 2 v 2.5 v 0 0.5 1 1.5 2 2.5 3 0.0 0.2 0.4 0.6 0.8 1.0 v ds [v] i d [a] 1.3 v 1.4 v 1.5 v 1.6 v 1.8 v 2 v 2.5 v 0 50 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 i d [a] r ds(on) [m ? ] rev 2.2 page 5 2010-03-25
BSD816SN 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =1.4 a; v gs =2.5 v v gs(th) =f( t j ); v ds =v gs ; i d =3.7 a parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz; t j =25c i f =f( v sd ) parameter: t j typ 98% 0 40 80 120 160 200 240 280 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] typ 98% 2% -0.4 0 0.4 0.8 1.2 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 0 10 1 10 2 10 3 0 5 10 15 20 v ds [v] c [pf] 25 c 150 c 150c, 98% 25c, 98% 10 -3 10 -2 10 -1 10 0 10 1 0 0.2 0.4 0.6 0.8 1 1.2 v sd [v] i f [a] rev 2.2 page 6 2010-03-25
BSD816SN 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =1.4 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =250 a 16 17 18 19 20 21 22 23 24 25 -60 -20 20 60 100 140 t j [c] v br(dss) [v] 4 v 10 v 16 v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.25 0.5 0.75 1 1.25 q gate [nc] v gs [v] 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t av [s] i av [a] v gs q gate v gs(th) q g(th) q gs q gd q sw q g rev 2.2 page 7 2010-03-25
BSD816SN sot363 package outline: footprint: packing: reflow soldering: dimensions in mm rev 2.2 page 8 2010-03-25
BSD816SN published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev 2.2 page 9 2010-03-25
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