features trenchfet power mosfet applications crt monitor hd drive circuit h-drive trans switching vn2001l vishay siliconix new product document number: 72654 s-40246?rev. a, 16-feb-04 www.vishay.com 1 n-channel 200-v (d-s) mosfet product summary v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) 200 1.2 @ v gs = 10 v 2 to 4 0.56 200 1.3 @ v gs = 6 v 2 to 4 0.54 top view to-226aa (to-92) s d g 1 2 3 device marking front view ?s? vn 2001l xxyy ?s? = siliconix logo xxyy = date code ?s? = siliconix logo xxyy = date code ordering information: VN2001L-TR1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 200 v gate-source v oltage v gs 20 v continuous drain current t a = 25 c i d 0.56 continuous drain current (t j = 150 c) t a = 70 c i d 0.45 a pulsed drain current a i dm 2 a avalanche current l = 0 1 mh i as 1.5 single pulse avalanche energy l = 0.1 mh e as 0.11 mj power dissipation t a = 25 c p d 0.8 w power dissipation t a = 70 c p d 0.51 w thermal resistance, junction-to-ambient r thja 156 c/w operating junction and storage temperature range t j , t stg ? 55 to 150 c notes a. pulse width limited by maximum junction temperature.
vn2001l vishay siliconix new product www.vishay.com 2 document number: 72654 s-40246?rev. a, 16-feb-04 specifications (t a = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 200 v gate-threshold v oltage v gs(th) v ds = v gs , i d = 250 a 2.0 3.0 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 200 v, v gs = 0 v 1 a zero gate voltage drain current i dss t j = 55 c 10 a on-state drain current a i d(on) v ds = 10 v, v gs = 10 v 1 a drain source on resistance a r ds( ) v gs = 10 v, i d = 0.56 a 0.95 1.2 drain-source on-resistance a r ds(on) v gs = 6 v, i d = 0.54 a 1.0 1.3 forward t ransconductance a g fs v ds = 10 v, i d = 0.56a 1.8 s diode forward voltage a v sd i s = 0.5 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 3.6 6 gate-source charge q gs v ds = 90 v, v gs = 10 v, i d = 0.5 a 0.8 nc gate-drain charge q gd 1.2 gate resistance r g 4 turn-on delay time t d(on) 5.5 10 rise time t r v dd = 100 v, r l = 200 i d 05 a v gen = 10 v 10 16 turn-off delay time t d(off) i d 0.5 a , v gen = 10 v r g = 25 22 40 ns fall time t f g 18 30 source-drain reverse recovery time t rr i f = 0.5 a, di/dt = 100 a/ s 28 45 notes a. pulse test: pw 300 s duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345 0.0 0.4 0.8 1.2 1.6 2.0 012345 v gs = 10 thru 5 v t j = 125 c ? 55 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 3.5 v 4 v 4.5 v
vn2001l vishay siliconix new product document number: 72654 s-40246?rev. a, 16-feb-04 www.vishay.com 3 typical characteristics (25 c unless noted) ? on-resistance ( r ds(on) ) 0 50 100 150 200 250 0 20406080100 0.2 0.6 1.0 1.4 1.8 2.2 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.00 0.40 0.80 1.20 1.60 2.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 90 v i d = 0.56 a i d ? drain current (a) v gs = 10 v i d = 0.56 a gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 0246810 t j = 150 c t j = 25 c i d = 0.56 a 2 0.1 0.001 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v v gs = 10 v 1 0.01
vn2001l vishay siliconix new product www.vishay.com 4 document number: 72654 s-40246?rev. a, 16-feb-04 typical characteristics (25 c unless noted) ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 0.6 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) safe operating area v ds ? drain-to-source voltage (v) 10 0.1 0.1 10 100 1000 0.001 1 0.01 1 ? drain current (a) i d t a = 25 c single pulse i dm limited i d(on) limited r ds(on) limited bv dss limited 1 ms 10 ms 100 ms dc 100 s 1 s 10 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 1 normalized effective transient thermal impedance, junction-to-ambient (to-226aa) normalized effec tive transient thermal impedance t 1 ? square wave pulse duration (sec) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 10 ? 1 10 ? 2 10 ? 3 10 ? 4
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