CRF02 2006-11-07 1 toshiba fast recovery diode silicon diffused type CRF02 power supply applications strobo flasher applications ? repetitive peak reverse voltage: v rrm = 800 v ? average forward current: i f (av) = 0.5 a ? low forward voltage: v fm = 3.0 v (max.) ? very fast reverse-recovery time: t rr = 100 ns (max.) ? suitable for compact assembly due to its small surface-mount package, the ?s ? flat tm ? (toshiba package name) absolute maximum ratings (ta = 25c) characteristics symbol rating unit repetitive peak reverse voltage v rrm 800 v average forward current i f(av) 0.5 (note 1) a peak one-cycle surge forward current (non-repetitive) i fsm 10 (50 hz) a junction temperature t j ? 40~150 c storage temperature range t stg ? 40~150 c note 1: ta = 84c: device mounted on a ceramic board board size: 50 mm 50 mm, soldering land size: 2 mm 2 mm board thickness: 0.64 t rectangular waveform ( = 180) note 2: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewi ng the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm jedec D jeita D toshiba 3-2a1a weight: 0.013 g (typ.)
CRF02 2006-11-07 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit peak forward voltage v fm i fm = 0.5 a ? 2.2 3.0 v repetitive peak reverse current i rrm(1) v rrm = 400 v ? ? 3.0 a repetitive peak reverse current i rrm(2) v rrm = 800 v ? ? 50 a reverse recovery time t rr i f = 1 a, di/dt = ? 30 a/ s ? ? 100 ns device mounted on a ceramic board (board size: 50 mm 50 mm) (soldering land: 2 mm 2 mm) (board thickness: 0.64 t) ? ? 70 device mounted on a glass-epoxy board (board size: 50 mm 50 mm) (soldering land: 6 mm 6 mm) (board thickness: 1.6 t) ? ? 140 thermal resistance r th (j-a) device mounted on a glass-epoxy board (board size: 50 mm 50 mm) (soldering land: 1.2 mm 1.2 mm) (board thickness: 1.6 t) ? ? 240 c/w thermal resistance (junction to lead) r th (j- ? ) ? ? ? 20 c/w marking standard soldering pad abbreviation code part no. f2 CRF02 handling precaution the absolute maximum ratings mean the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. the followings are the general derating method that we recommend for designing a circuit using this device. vrrm: we recommend that the worst-case voltage, including surge voltage, be no greater than 80% of the absolute maximum rating of vrrm for a dc circuit; and no greater than 50% of that of vrrm for an ac circuit. vrrm has a temperature coefficient (0.1%/ ). be sure to take this temperature coefficient into account when designing a device at low temperature. if(av): we recommend that the worst case current be no greater than 80% of the absolute maximum rating of if(av). carry out sufficient heat design. if it is not possible to design a circuit with excellent heat radiation, set a margin by using an allowable tamax-if (av) curve. this rating specifies the non-repetitive peak current in one cycle of a 50-hz sine wave, condition angle 180 . therefore this applies only to abnormal operation, which seldom occurs during the lifespan of the device. for this device, we recommend a tj of below 120 under the worst load and heat radiation conditions. thermal resistance between junction and ambient fluctuates depending on the mounting condition of the device. when using the device, be sure to design the circuit board and soldering land size to match the appropriate thermal resistance value. refer to the rectifier databook for further information. 2.8 1.2 1.2 unit: mm
CRF02 2006-11-07 3 0 4 12 10 8 1 100 10 3 5 30 50 ta = 25c f = 50 hz 6 2 0 1.0 0.01 0.1 1 10 2.0 3.0 4.0 5.0 7.0 25c 75c t j = 150c pulse test 6.0 i f ? v f ta m a x ? i f (av) average forward current i f (av) (a) ta m a x ? i f (av) maximum allowable ambient temperature ta m a x ( c ) number of cycles surge forward current peak surge forward current i fsm (a) average forward current i f (av) (a) p f (av) ? i f (av) average forward power dissipation p f (av) (w) time t (ms) r th (j-a) ? t transient thermal impedance r th (j-a) (c/w) average forward current i f (av) (a) maximum allowable ambient temperature ta m a x ( c ) instantaneous forward voltage v f (v) instantaneous forward current i f (a) 0 0.4 0.2 0.6 0.8 0 0.2 0.6 0.8 0.4 = 60 120 180 1.0 rectangular waveform 0 360 conduction angle: 0 0 40 160 0.1 0.3 0.4 0.5 0.7 0.8 20 60 120 100 0.2 0.6 80 140 = 60 120 180 rectangular waveform 0 360 conduction angle: device mounted on a ceramic board (board size: 50 mm 50 mm, land size: 2 mm 2 mm) 160 0 0 40 0.1 0.3 0.4 0.5 0.7 0.8 20 60 120 100 0.2 0.6 80 140 = 60 120 180 rectangular waveform 0 360 conduction angle: device mounted on a glass-epoxy board (board size: 50 mm 50 mm, land size: 6 mm 6 mm) 1 100 1000 0.001 1000 1 0.01 0.1 10 100 10 device mounted on a glass-epoxy board (board size: 50 mm 50 mm, land size: 1.2 mm 1.2 mm, board thickness: 1.6 t) device mounted on a ceramic board (board size: 50 mm 50 mm, land size: 2 mm 2 mm, board thickness: 0.64 t) device mounted on a glass-epoxy board (board size: 50 mm 50 mm, land size: 6 mm 6 mm, board thickness: 1.6 t)
CRF02 2006-11-07 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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