vsud360cw40 www.vishay.com vishay semiconductors revision: 10-nov-11 1 document number: 93116 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fred pt? ultrafast soft recovery diode module, 360 a features ? very low q rr and t rr ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? reduced rfi and emi ? higher frequency operation ? reduced snubbing description fred pt ? diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. the softness of the recovery elimin ates the need for a snubber in most applications. these devices are ideally suited for hf welding, power converters an d other applications where switching losses are a significan t portion of the total losses. product summary i f(av) 360 a v r 400 v q rr (typical) 1250 nc t rr 40 ns type modules - diode, fred pt ? to-244 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 400 v continuous forward current per diode i f(av) t c = 25 c 510 a t c = 85 c 305 t c = 116 c 180 single pulse forward current per diode i fsm 1200 maximum power dissipation p d t c = 25 c 570 w t c = 110 c 180 operating junction and storage temperatures t j , t stg - 40 to 150 c electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units breakdown voltage v br i r = 100 a 400 - - v forward voltage v fm i f = 180 a - 1.09 1.27 i f = 360 a - 1.23 1.50 i f = 180 a, t j = 150 c - 0.88 0.96 i f = 360 a, t j = 150 c - 1.04 1.18 reverse leakage current i rm t j = 150 c, v r = v r rated - 0.26 1.28 ma series inductance l s from top of terminal ho le to mounting plane - 5 - nh
vsud360cw40 www.vishay.com vishay semiconductors revision: 10-nov-11 2 document number: 93116 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 40 69 ns t j = 25 c i f = 180 a, di f /dt = 200 a/s, v r = 200 v -74- t j = 150 c - 171 - peak recovery current i rrm i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 5.1 - a i f = 180 a, di f /dt = 200 a/s, v r = 200 v - 6.6 - i f = 180 a, di f /dt = 200 a/s, v r = 200 v, t j = 150 c - 15.2 - reverse recovery charge q rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 125 - nc i f = 180 a, di f /dt = 200 a/s, v r = 200 v - 243 - i f = 180 a, di f /dt = 200 a/s, v r = 200 v, t j = 150 c - 1295 - thermal - mechanical specifications parameter symbol min. typ. max. units thermal resistance, junction to case per leg r thjc --0.19 c/w per module - - 0.095 thermal resistance, case to heatsink (flag greased surface) r thcs -0.10- weight -68- g -2.4-oz. mounting torque 30 (3.4) - 40 (4.6) lbf in (n m) mounting torque center hole 12 (1.4) - 18 (2.1) terminal torque 30 (3.4) - 40 (4.6) vertical pull - - 80 lbf in 2" lever pull - - 35 case style to-244 (to-244ab)
vsud360cw40 www.vishay.com vishay semiconductors revision: 10-nov-11 3 document number: 93116 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop vs. instantaneous forwar d current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) fig. 3 - maximum current ra ting capability (per leg) fig. 4 - typical reverse recovery time vs. di f /dt t j = 125 c (per leg) fig. 5 - forward power loss characteristics i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0 0.5 1.0 1.5 2.0 1 10 1000 100 93116_01 t j = 25 c t j = 125 c i r - reverse current (a) v r - reverse voltage (v) 0 100 200 300 400 0.1 1 10 100 1000 93116_02 t j = 150 c t j = 25 c t c - maximum allowable case temperature i dc - current rating (a) 0 50 100 150 200 100 110 120 140 130 150 160 93116_03 r thjc = 0.19 k/w d = 0.5 dc t rr (ns) di f /dt (a/s) 100 200 300 400 500 140 240 220 160 180 200 93116_04 360 a 180 a 90 a forward power loss (w) forward current (a) 150 100 50 200 0 200 0 100 150 50 93116_05 dc rms limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.25 d = 0.50
vsud360cw40 www.vishay.com vishay semiconductors revision: 10-nov-11 4 document number: 93116 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - reverse recovery parameter test circuit fig. 7 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vsud360cw40 www.vishay.com vishay semiconductors revision: 10-nov-11 5 document number: 93116 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration circuit circuit configuration code circuit drawing two diodes common cathodes c links to related documents dimensions www.vishay.com/doc?95021 1 - vishay semiconductors product suffix 2 - type of device: ud = fred pt ? 3 - current rating (360 = 360 a) 4 5 - circuit configuration: 6 - type of device: - voltage rating (40 = 400 v) c = common cathode w = to-244 wire bondable not isolated device code 5 1 3 2 4 6 vs ud 360 c w 40 base common cathode lug terminal anode 2 lug terminal anode 1
document number: 95021 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 25-jun-07 1 to-244 outline dimensions vishay semiconductors dimensions in millimeters (inches) 3 2 3 1 ? 5.2 (? 0.20) 9.6 (0.37) min. 93 (3.66) max. ?" - 20 unc 80 (3.15) 13 (0.51) 35 (1.37) ref. 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 21 (0.82) 20 (0.78) ? 7.2 (? 0.28) (2 places) 12.6 (0.5)
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