1 semiconductor caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. copyright ? harris corporation 1998 CA3083 general purpose high current npn transistor array the CA3083 is a versatile array of ?ve high current (to 100ma) npn transistors on a common monolithic substrate. in addition, two of these transistors (q 1 and q 2 ) are matched at low current (i.e., 1ma) for applications in which offset parameters are of special importance. independent connections for each transistor plus a separate terminal for the substrate permit maximum ?exibility in circuit design . pinout CA3083 (pdip, soic) top view features ? high i c . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100ma (max) ?low v ce sat (at 50ma) . . . . . . . . . . . . . . . . . . 0.7v (max) ? matched pair (q 1 and q 2 ) -v io (v be match) . . . . . . . . . . . . . . . . . . . . 5mv (max) -i io (at 1ma). . . . . . . . . . . . . . . . . . . . . . . . 2.5 m a (max) ? 5 independent transistors plus separate substrate connection applications ? signal processing and switching systems operating from dc to vhf ? lamp and relay driver ? differential ampli?er ? temperature compensated ampli?er ? thyristor firing ? see application note an5296 applications of the ca3018 circuit transistor array for suggested applications ordering information part number (brand) temp. range ( o c) package pkg. no. CA3083 -55 to 125 16 ld pdip e16.3 CA3083m (3083) -55 to 125 16 ld soic m16.15 CA3083m96 (3083) -55 to 125 16 ld soic tape and reel m16.15 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 substrate q 1 q 2 q 3 q 4 q 5 september 1998 file number 481.4
2 absolute maximum ratings thermal information the following ratings apply for each transistor in the device: collector-to-emitter voltage, v ceo . . . . . . . . . . . . . . . . . . . . . . 15v collector-to-base voltage, v cbo . . . . . . . . . . . . . . . . . . . . . . . . 20v collector-to-substrate voltage, v cio (note 1) . . . . . . . . . . . . . . 20v emitter-to-base voltage, v ebo . . . . . . . . . . . . . . . . . . . . . . . . . . 5v collector current (i c ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100ma base current (i b ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20ma operating conditions temperature range . . . . . . . . . . . . . . . . . . . . . . . . . -55 o c to 125 o c thermal resistance (typical, note 2) q ja ( o c/w) q jc ( o c/w) pdip package . . . . . . . . . . . . . . . . . . . 135 n/a soic package . . . . . . . . . . . . . . . . . . . 200 n/a maximum power dissipation (any one transistor) . . . . . . . 500mw maximum junction temperature (plastic package) . . . . . . . 150 o c maximum storage temperature range . . . . . . . . . . -65 o c to 150 o c maximum lead temperature (soldering 10s) . . . . . . . . . . . . 300 o c (soic - lead tips only) caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio nofthe device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied. notes: 1. the collector of each transistor of the CA3083 is isolated from the substrate by an integral diode. the substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. to avoid undesired coupling between transistors, the substrate terminal (5) should be maintained at either dc or signal (ac) ground. a suitable bypass capacitor can be used to establish a signal ground. 2. q ja is measured with the component mounted on an evaluation pc board in free air. electrical speci?cations for equipment design, t a = 25 o c parameter symbol test conditions min typ max units for each transistor collector-to-base breakdown voltage v (br)cbo i c = 100 m a, i e = 0 20 60 - v collector-to-emitter breakdown voltage v (br)ceo i c = 1ma, i b = 0 15 24 - v collector-to-substrate breakdown voltage v (br)cio i ci = 100 m a, i b = 0, i e = 0 20 60 - v emitter-to-base breakdown voltage v (br)ebo i e = 500 m a, i c = 0 5 6.9 - v collector-cutoff-current i ceo v ce = 10v, i b = 0 - - 10 m a collector-cutoff-current i cbo v cb = 10v, i e = 0 - - 1 m a dc forward-current transfer ratio (note 3) (figure 1) h fe v ce = 3v i c = 10ma 40 76 - i c = 50ma 40 75 - base-to-emitter voltage (figure 2) v be v ce = 3v, i c = 10ma 0.65 0.74 0.85 v collector-to-emitter saturation voltage (figures 3, 4) v ce sat i c = 50ma, i b = 5ma - 0.40 0.70 v gain bandwidth product f t v ce = 3v, i c = 10ma - 450 - mhz for transistors q 1 and q 2 (as a differential ampli?er) absolute input offset voltage (figure 6) |v io |v ce = 3v, i c = 1ma - 1.2 5 mv absolute input offset current (figure 7) |i io |v ce = 3v, i c = 1ma - 0.7 2.5 m a note: 3. actual forcing current is via the emitter for this test. CA3083
3 typical performance curves figure 1. h fe vs i c figure 2. v be vs i c figure 3. v ce sat vs i c figure 4. v ce sat vs i c figure 5. v be sat vs i c figure 6. v io vs i c (transistors q 1 and q 2 as a differential amplifier) v ce = 3v collector current (ma) dc forward current transfer ratio t a = 0 o c t a = 25 o c 0.1 1 10 100 60 50 70 80 90 100 t a = 70 o c v ce = 3v collector current (ma) base-to-emitter voltage (v) t a = 70 o c t a = 25 o c 0.1 1 10 100 0.6 0.5 0.7 0.8 0.9 t a = 0 o c h fe = 10, t a = 25 o c collector current (ma) collector-to-emitter 1 10 100 0.2 0 0.4 0.6 0.8 1 maximum typical saturation voltage (v) collector current (ma) collector-to-emitter 1 10 100 0.2 0 0.4 0.6 0.8 1 1.2 maximum h fe = 10, t a = 70 o c typical saturation voltage (v) h fe = 10, t a = 25 o c collector current (ma) base-to-emitter 1 10 100 0.6 0.5 0.7 0.8 0.9 1 saturation voltage (v) v ce = 3v, t a = 25 o c collector current (ma) absolute input offset voltage (mv) 0.1 1 10 1 0 2 3 4 5 6 CA3083
4 figure 7. i io vs i c (transistors q 1 and q 2 as a differential amplifier) typical performance curves (continued) v ce = 3v, t a = 25 o c collector current (ma) absolute input offset current ( m a) 0.1 1 10 1 10 0.1 CA3083
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