20v n-channel enhancement mode mosfet ZXM61N02F summary v (br)dss =20v; r ds(on) =0.18 v ; i d =1.7a description this new generation of high density mosfets from ty utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features low on-resistance fast switching speed low threshold low gate drive sot23 package applications dc - dc converters power management functions disconnect switches motor control ordering information device reel size (inches) tape width (mm) quantity per reel ZXM61N02Fta 7 8mm embossed 3000 units ZXM61N02Ftc 13 8mm embossed 10000 units device marking n02 top view sot23 1 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com sales@twtysemi.com 1 of 3 http://www.twtysemi.com
ZXM61N02F absolute maximum ratings. parameter symbol limit unit drain-source voltage v dss 20 v gate source voltage v gs 12 v continuous drain current (v gs =4.5v; t a =25c)(b) (v gs =4.5v; t a =70c)(b) i d 1.7 1.3 a pulsed drain current (c) i dm 7.4 a continuous source current (body diode) (b) i s 0.8 a pulsed source current (body diode) i sm 7.4 a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c thermal resistance parameter symbol value unit junction to ambient (a) r q ja 200 c/w junction to ambient (b) r q ja 155 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t < 5 secs. (c) repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. 2 issue 1 - june 2004 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electrical characteristics (at t a = 25c unless otherwise stated). parameter symbol min. typ.(3) max. unit conditions. static drain-source breakdown voltage v (br)dss 20 v i d =250 m a, v gs =0v zero gate voltage drain current i dss 1 m a v ds =20v, v gs =0v gate-body leakage i gss 100 na v gs = 12v, v ds =0v gate-source threshold voltage v gs(th) 0.7 v i d =250 m a, v ds = v gs static drain-source on-state resistance (1) r ds(on) 0.18 0.24 w w v gs =4.5v, i d =0.93a v gs =2.7v, i d =0.47a forward transconductance (3) g fs 1.3 s v ds =10v,i d =0.47a dynamic (3) input capacitance c iss 160 pf v ds =15 v, v gs =0v, f=1mhz output capacitance c oss 50 pf reverse transfer capacitance c rss 30 pf switching (2) (3) turn-on delay time t d(on) 2.4 ns v dd =10v, i d =0.93a r g =6.2 w , r d =11 w (refer to test circuit) rise time t r 4.2 ns turn-off delay time t d(off) 7.8 ns fall time t f 4.2 ns total gate charge q g 3.4 nc v ds =16v,v gs =4.5v, i d =0.93a (refer to test circuit) gate-source charge q gs 0.41 nc gate-drain charge q gd 0.8 nc source-drain diode diode forward voltage (1) v sd 0.95 v t j =25c, i s =0.93a, v gs =0v reverse recovery time (3) t rr 12.9 ns t j =25c, i f =0.93a, di/dt= 100a/ m s reverse recovery charge (3) q rr 5.2 nc notes (1) measured under pulsed conditions. width 300 m s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. ZXM61N02F product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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