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this is information on a product in full production. march 2013 docid024400 rev 1 1/13 13 STL12P6F6 p-channel 60 v, 0.13 ? typ., 3 a stripfet? vi deepgate? power mosfet in a powerflat? 5x6 package datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * qg industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is a p-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. note: for the p-channel power mosfet the actual polarity of the voltages and the current must be reversed. $09 ' * 6 powerflat? 5x6 1 2 3 4 order code v dss r ds(on)max i d STL12P6F6 60 v 0.16 @ 10 v 3 a table 1. device summary order code marking package packaging STL12P6F6 12p6f6 powerflat 5x6 tape and reel www.st.com
contents STL12P6F6 2/13 docid024400 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid024400 rev 1 3/13 STL12P6F6 electrical ratings 1 electrical ratings note: for the p-channel power mosfet actual polarity of voltages and current has to be reversed. table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d (1) 1. the value is according to r thj-case drain current (continuous) at t c = 25 c 4 a i d (1) drain current (continuous) at t c = 100 c 7 a i d (2) 2. the value is according to r thj-pcb drain current (continuous) at t pcb = 25 c 12 a i d (2) drain current (continuous) at t pcb = 100 c 7 a i dm (2)(3) 3. pulse width is limited by safe operating area. drain current (pulsed) 48 a p tot total dissipation at t c = 25 c 75 w p tot total dissipation at t pcb = 25 c 4.8 w t j p stg operating junction temperature storage temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 2 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 15 mm 2 , 2 oz cu, t<10 sec thermal resistance junction-pcb max 31.3 c/w
electrical characteristics STL12P6F6 4/13 docid024400 rev 1 2 electrical characteristics (tcase = 25 c unless otherwise specified). note: for the p-channel power mosfet actual polarity of voltages and current has to be reversed. table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a60v i dss zero gate voltage drain current (v gs = 0) v ds = 60 v v ds = 60 v, t c =125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2 4v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 1.5 a 0.13 0.16 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 48 v, f = 1 mhz, v gs = 0 - 340 - pf c oss output capacitance - 40 - pf c rss reverse transfer capacitance -20-pf q g total gate charge v dd = 48 v, i d = 3 a, v gs = 10 v (see figure 3 ) -6.4-nc q gs gate-source charge - 1.7 - nc q gd gate-drain charge - 1.7 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 48 v, i d = 1.5 a, r g = 4.7 , v gs = 10 v (see figure 2 ) -6.4-ns t r rise time - 5.3 - ns t d(off) turn-off delay time - 14 - ns t f fall time - 3.7 - ns
docid024400 rev 1 5/13 STL12P6F6 electrical characteristics note: for the p-channel power mosfet actual polarity of voltages and current has to be reversed. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 3 12 a a v sd (2) 2. pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 3 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 5 a, di/dt = 100 a/ s v dd = 16 v, t j = 150 c (see figure 4 ) -20 ns q rr reverse recovery charge - 17.8 nc i rrm reverse recovery current - 1.8 a
test circuits STL12P6F6 6/13 docid024400 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times
docid024400 rev 1 7/13 STL12P6F6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 8. powerflat 5x6 type s-r mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.00 5.20 5.40 e 5.95 6.15 6.35 d2 4.11 4.31 e2 3.50 3.70 e1.27 l 0.60 0.80 k 1.275 1.575
package mechanical data STL12P6F6 8/13 docid024400 rev 1 figure 5. powerflat? 5x6 type s-r drawing 8231817_rev.f_ribbon type s-r 5 8 4 1 pin 1 identification 1 4 5 8 pin 1 identification . bottom view side view top view
docid024400 rev 1 9/13 STL12P6F6 package mechanical data figure 6. powerflat? 5x6 recommended footprint (dimensions are in mm) footprint
packaging mechanical data STL12P6F6 10/13 docid024400 rev 1 5 packaging mechanical data figure 7. powerflat? 5x6 tape (a) figure 8. powerflat? 5x6 package orientation in carrier tape. a. all dimensions are in millimeters. measured from centerline of sprocket hole to centerline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centerline of sprocket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5.300.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6.300.1) f(5.500.1)(iii) w(12.000.3) 1.750.1 4.00.1 (ii) p 0 y y section y-y c l p1(8.000.1) do d1 e 1 (0.30 t ref.r0.50 ref 0.20 base and bulk quantity 3000 pcs 8234350_tape_rev_c pin 1 identification
docid024400 rev 1 11/13 STL12P6F6 packaging mechanical data figure 9. powerflat? 5x6 reel 2.20 ?21.2 13.00 core detail 2.50 1.90 r0.60 77 128 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 18.4 (max) w3 06 ps esd logo at t e n t i o n observe precautions for handling electrostatic sensitive devices 11.9/15.4 12.4 (+2/-0) a 330 (+0/-4.0) all dimensions are in millimeters ?n 178(2.0) 8234350_reel_rev_c
revision history STL12P6F6 12/13 docid024400 rev 1 6 revision history table 9. document revision history date revision changes 20-mar-2013 1 first release.
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