rgf1a thru rgf1m document number 88697 10-aug-05 vishay general semiconductor www.vishay.com 1 p a t e n t e d * ? do-214ba (gf1) * glass-plastic encapsulation technique is covered by patent no. 3,996,602, brazed-lead assembly by patent no. 3,930,306 and lead forming by patent no. 5,151,846 surface mount glass passivated junction fast switching rectifier major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 1000 v i fsm 30 a v f 1.3 v t rr 150 ns, 250 ns, 500 ns t j max. 175 c features ? superectifier structure for high reliability condition ? patented glass-plastic encapsulation technique ? ideal for automated placement ? fast switching for high efficiency ? low leakage current ? high forward surge capability ? meets environmental standard mil-s-19500 ? meets msl level 1, per j-std-020c ? solder dip 260 c, 40 seconds typical applications for use in fast switching re ctification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication mechanical data case: do-214ba, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating maximum ratings (t a = 25 c unless otherwise noted) parameter symbol rgf1a rgf1b rgf1d rgf1g rgf1j rgf1k rgf1m unit device marking code ra rb rd rg rj rk rm maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current at t l = 120 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a max. full load reverse current, full cycle average t a = 55 c i r(av) 50 a operating junction and storage temperature range t j ,t stg - 65 to + 175 c
www.vishay.com 2 document number 88697 10-aug-05 rgf1a thru rgf1m vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) note: (1) thermal resistance from junction to am bient and from junction to lead, p.c.b. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper p ad areas ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol rgf1a rgf1b rgf1d rgf1g rgf1j rgf1k rgf1m unit maximum instantaneous forward voltage at 1.0 a v f 1.3 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 100 a ty p i c a l r eve r s e recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 150 250 500 ns typical junction capacitance at 4.0 v, 1 mhz c j 8.5 pf parameter symbol rgf1a rgf1b rgf1d rgf1g rgf1j rgf1k rgf1m unit typical thermal resistance (1) r ja r jl 80 28 c/w figure 1. forward current derating curve 0.5 100 110 120 130 140 150 160 175 0 1 p. c . b . m o u nted on 0.2 x 0.2? (5.0 x 5.0mm) copper pad areas 60 hz resisti v e or ind u cti v e load lead temperat u re (c) a v erage for w ard rectified c u rren t (a) figure 2. maximum non-repetitive peak forward surge current 1 10 100 0 5 10 15 20 25 30 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
rgf1a thru rgf1m document number 88697 10-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 t j = 25 c p u lse w idth = 300 s 1% d u ty cycle instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0 20 40 60 8 0 100 0.01 0.1 1 10 t j = 125 c t j = 100 c t j = 25 c percent of rated peak re v erse v oltage (%) instan taneo u s re v erse c u rrent ( a) figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance 1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) 0.01 0.1 1 10 100 0.1 1 10 100 mo u nted on 0.2 x 02.? (5.0 x 7mm) copper pad areas t, p u lse d u ration (sec.) transient thermal impedanc e (c/ w ) 0.167 (4.24) 0.1 8 7 (4.75) 0.0065 (0.17) 0.015 (0.3 8 ) 0.030 (0.76) 0.060 (1.52) 0.196 (4.9 8 ) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.100 (2.54) 0.11 8 (3.00) 0.040 (1.02) 0.066 (1.6 8 ) 0.09 8 (2.49) 0.10 8 (2.74) 0.006 (0.152) typ. do-214ba (gf1) 0.076 max. (1.93 max.) 0.220 (5.5 8 )ref 0.060 mi n . (1.52 mi n .) mountin g pad layout cathode band 0.066 mi n . (1.6 8 mi n .)
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