photomicrosensor (transmissive) ee-sh3 series 169 photomicrosensor (transmissive) ee-sh3 series dimensions note: all units are in millimeter s unless otherwise indicated. features ? high-resolut ion model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. ? solder terminal models: ee- sh3/-sh3-cs/-sh3-ds/-sh3-gs ? pcb terminal models: ee-sh3-b/-sh3 -c/-sh3-d/-sh3-g ? rohs compliant. absolute maximum ratings (ta = 25 c) note: 1. refer to the tem perature rating chart if the ambient tempera- ture exceeds 25 c. 2. the pulse width is 10 s maximum with a frequency of 100 hz. 3. complete soldering w ithin 10 seconds. ordering information electrical and optical ch aracteristics (ta = 25 c) internal cir c uit k a c e terminal no. name a anode k cathode c collector e emitter dimensions toleran c e 3 mm max. 0.2 3 < mm 6 0.24 6 < mm 10 0.29 10 < mm 18 0.35 18 < mm 30 0.42 four, 0.25 two, c1.5 four, r1 matted center mark solder terminal cross section aa pcb terminal cross section aa 19 0.15 25.4 3.4 0.2 2.54 0.2 7.2 0.2 7.2 0.2 7.6 0.3 6.2 10.2 model aperture (a x b) ee-sh3(-b) 2.1 x 0.5 ee-sh3-c(s) 2.1 x 1.0 ee-sh3-d(s) 2.1 x 0.2 ee-sh3-g(s) 0.5 x 2.1 unless otherwise specified, the tolerances are as shown below. two, 3.2 0.2 dia. holes item symbol rated value emitter forward current i f 50 ma (see note 1) pulse forward current i fp 1 a (see note 2) reverse voltage v r 4 v detector collector?emitter voltage v ceo 30 v emitter?collector voltage v eco --- collector current i c 20 ma collector dissipation p c 100 mw (see note 1) ambient tem- perature operating t opr ?25 c to 85 c storage t stg ?30 c to 100 c soldering temperature t sol 260 c (see note 3) description aperture (a x b) model photomicrosensor (transmissive) 2.1 x 0.5 ee-sh3(-b) 2.1 x 1.0 ee-sh3-c(s) 2.1 x 0.2 ee-sh3-d(s) 0.5 x 2.1 ee-sh3-g(s) item symbol value condition ee-sh3(-b) ee-sh3-c(s) ee-sh3-d(s) ee-sh3-g(s) emitter forward voltage v f 1.2 v typ., 1.5 v max. i f = 30 ma reverse current i r 0.01 a typ., 10 a max. v r = 4 v peak emission wavelength p 940 nm typ. i f = 20 ma detector light current i l 0.5 to 14 ma typ. 1 to 28 ma typ. 0.1 ma min. 0.5 to 14 ma i f = 20 ma, v ce = 10 v dark current i d 2 na typ., 200 na max. v ce = 10 v, 0 l x leakage current i leak --- --- collector?emitter saturated voltage v ce (sat) 0.1 v typ., 0.4 v max. --- 0.1 v typ., 0.4 v max. i f = 20 ma, i l = 0.1 ma peak spectral sensitivity wavelength p 850 nm typ. v ce = 10 v rising time tr 4 s typ. v cc = 5 v, r l = 100 , i l = 5 ma falling time tf 4 s typ.
170 photomicrosensor (transmissive) ee-sh3 series engineering data forward current vs. colle c tor dissipation temperature rating forward current vs. forward voltage chara c teristi c s (typi c al) light current vs. forward current chara c teristi c s (typi c al) light current vs. colle c tor ? emitter voltage chara c teristi c s (ee-sh3(-b)) dark current vs. ambient temperature chara c teristi c s (typi c al) sensing position chara c teristi c s (ee-sh3-d(s)) distance d (mm) sensing position chara c teristi c s (ee-sh3(-b)) distance d (mm) sensing position chara c teristi c s (ee-sh3- g (s)) distance d (mm) sensing position chara c teristi c s (ee-sh3-c(s)) distance d (mm) input output input output 90 % 10 % center of optical axis center of optical axis center of optical axis center of optical axis d 0 ? + response time measurement cir c uit ambient temperature ta ( c) collector dissipation p c (mw) forward volta g e v f (v) forward current i f (ma) forward current i f (ma) forward current i f (ma) li g ht current i l (ma) collector ? emitter volta g e v ce (v) li g ht current i l (ma) ambient temperature ta ( c) load resistance r l (k ) ta = ? 30 c ta = 25 c ta = 70 c ta = 25 c v ce = 10 v i f = 40 ma i f = 30 ma i f = 20 ma i f = 10 ma ta = 25 c v ce = 10 v 0 l x i f = 20 ma v ce = 5 v i f = 20 ma v ce = 10 v ta = 25 c v cc = 5 v ta = 25 c response time tr, tf ( s) relative li g ht current i l (%) dark current i d (na) i f = 50 ma ambient temperature ta ( c) i f p c relative li g ht current i l (%) i f = 20 ma v ce = 10 v ta = 25 c relative li g ht current i l (%) i f = 20 ma v ce = 10 v ta = 25 c relative li g ht current i l (%) i f = 20 ma v ce = 10 v ta = 25 c relative li g ht current i l (%) relative light current vs. ambi- ent temperature chara c teristi c s (typi c al) response time vs. load resist- an c e chara c teristi c s (typi c al)
photomicrosensor (transmissive) ee-sh3 series memo
photomicrosensor (transmissive) ee-sh3 series omron on-line global - http://www.omron.com usa - http://www.components.omron.com cat. no. x305-e-1 printed in usa omron electronic components llc 55 e. commerce drive, suite b schaumburg, il 60173 847-882-2288 10/10 specificat ions subject to change without notice all sales are subject to omron electronic components llc standard terms and conditions of sale, which can be found at http://www.components.omron.com/compon ents/web/webfiles.ns f/sales_terms.html all dimensions shown are in millimeters. to convert millimeters into inches, multiply by 0.0393 7. to convert grams into ounces, multiply by 0.03527.
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