specification for approval document : sig201612h-xxx revision : a4 page : 1 of 11 sig201612h-xxx sealed choke coil 1. features low profile 2.0mm x 1.6mm x 1.2mm low coil resistance with large currents. high magnetic shield construction should actualize high resolution for emc protection. 100% lead (pb) free meet rohs standard 2. application cellular phones, lcd displays, hdds, dvcs, dscs, pdas etc.. 3. type designation sig 201612 h ? xxx (1) (2) (3) (4) where (1) series no : (2) size : 201612 = 2.0mm x 1.6mm x 1.2mm (3) characteristic: l : low resistance type h: high current type (4) inductance value : 2r2 = 2.2 h 4. outline dimensions note : this graph is only regard to dimensions spec. for outer appearance, please refer to actual product. code dimensions (mm) l 1.6 0.1 w 2.0 0.1 t 1.2 max p 0.6 0.2 l p t w p
specification for approval document : sig201612h-xxx revision : a4 page : 2 of 11 b c a 5. recommend land pattern dimensions the customer shall determine the land dimensi ons shown above after confirming and safety. 6. specifications r dc ( m ) heat rating current dc amps. idc ( a ) saturation current dc amps. isat ( a ) part number l0 inductance ( h ) @ (0a) typical maximum typical maximum typical maximum sig201612h-r47 0.47 40 45 2.35 2.11 2.90 2.64 sig201612h-r50 0.5 48 58 2.20 2.07 2.50 2.25 sig201612h-1r0 1.0 76 92 1.70 1.44 1.77 1.59 sig201612h-1r5 1.5 124 149 1.44 1.29 1.75 1.57 sig201612h-1r8 1.8 138 166 1.36 1.22 1.50 1.35 sig201612h-2r0 2.0 140 168 1.35 1.21 1.37 1.23 sig201612h-2r2 2.2 154 185 1.29 1.16 1.26 1.13 sig201612h-3r3 3.3 213 256 1.10 0.99 1.10 0.99 sig201612h-4r7 4.7 280 336 0.96 0.86 0.90 0.81 sig201612h-6r8 6.8 399 479 0.80 0.72 0.73 0.65 sig201612h-8r2 8.2 481 577 0.73 0.65 0.71 0.63 SIG201612H-100 10.0 528 634 0.70 0.63 0.63 0.56 sig201612h-150 15.0 1.455 1,746 0.46 0.41 0.54 0.48 sig201612h-220 22.0 1,610 1,932 0.35 0.31 0.42 0.37 * if you require another part number please contact with us. ** inductance tolerance 20% note 1. all test data is referenced to 25 ambient. note 2. idc : dc current (a) that will cause an approximate t of 40 note 3. isat : dc current (a) that will cause lo to drop approximately 30% note 4. operating temperature range -55 to + 125 note 5. the part temperature (ambient + temp rise ) should not exceed 125 under worse case operating conditions. circuit design , compone nt placement, pwb trace size and thickness, airflow and other cooling provision all affect the part temperature. part temperature should be verified in the end application. note 6. the rated current as listed is either th e saturation current or the heating current depending on which value is lower. a 1.7 b 0.6 c 2.3 unit : mm
specification for approval document : sig201612h-xxx revision : a4 page : 3 of 11 6-1 current characteristic sig201612h-r47 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-r50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-1r0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-1r5 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-1r8 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-2r0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-2r2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 dc bias(amps) inductance( h) 0 15 30 45 60 75 90 temp rise( ) inductance( h) temp rise ( ) sig201612h-3r3 0.0 0.6 1.2 1.8 2.4 3.0 3.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise (
specification for approval document : sig201612h-xxx revision : a4 page : 4 of 11 sig201612h-4r7 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-6r8 0.0 2.0 4.0 6.0 8.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-8r2 0.0 2.0 4.0 6.0 8.0 10.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) SIG201612H-100 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( ) sig201612h-150 0.0 3.0 6.0 9.0 12.0 15.0 18.0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp.rise( ) sig201612h-220 0.0 4.5 9.0 13.5 18.0 22.5 27.0 0.00 0.06 0.12 0.18 0.24 0.30 0.36 0.42 0.48 0.54 0.60 dc bias(amps) inductance( h) 0 20 40 60 80 100 temp rise( ) inductance( h) temp rise ( )
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