sanrex sanrex thyristor / diode (isolated type) pk(pd)160fg40/80/120/160 i t(av) = 160a , v rrm = 400 - 1600v sanrex thyristor/ thyristor modules ( pk series ), thyristor/ diode modules ( pd series ) are designed for general purpose high voltage applications such as motor controls, temperature controls, lighting controls and ups. features * glass- passivated junctions features * high surge current * low loss (v tm =1.5v) typical applications * motor controls * temperature controls * lighting controls < maximum ratings > ( tj = 25 c unless otherwise noted) ratings symbol item pk160fg40 pk160fg80 pk160fg120 pk160fg160 unit v rrm repetitive peak reverse voltage 400 800 1200 1600 v v rsm non-repetitive peak reverse voltage 480 960 1300 1700 v v drm repetitive peak off-state voltage 400 800 1200 1600 v i t(av) average on-state current t c = 84c 160 a i t(rms) r.m.s. on-state current t c = 84c 251 a i tsm surge on-state current 1/2 cycle, 50hz/60hz, peak value, non-repetitive 5000/5400 a i 2 t i 2 t (for fusing) value for one cycle surge current 125000 a 2 s p gm peak gate power dissipation 10 w p g(av) average gate power dissipation 3 w i fgm peak gate current 3 a v fg m peak gate voltage (forward) 10 v v rg m peak gate voltage (reverse) 5 v di/ dt critical rate of rise of on-state current i g =100ma, v d =1/2v drm, dig/dt=0.1a/ f s 200 a/ f s v iso isolation breakdown voltage a.c. 1 minute 2500 tj operating junction temperature -40 to +125 c t s t g storage temperature -40 to +125 c mounting m6 recommended value 2.5 to 3.9 4.7 mounting torque terminals m6 recommended value 2.5 to 3.9 4.7 n*m mass typical value 210 g < electrical characteristics > ( tj = 25 c unless otherwise noted) ratings symbol item conditions min. typ. max. unit i drm repetitive peak off-state current t j = 125c, v d = v drm 35 ma i rrm repetitive peak reverse current t j = 125c, v r = v rrm 35 ma v tm peak on-state voltage i t = 480a 1.5 v i gt gate trigger current vd=6v, it=1a 100 ma v gt gate trigger voltage vd=6v, it=1a 3 v v g d non-trigger gate voltage tj = 125 c, v d =1/2v drm 0.25 v dv/ dt critical rate of rise of off-state voltage tj = 125 c, v d =2/3v drm 500 v/ f s rth(j-c) thermal resistance junction to case 0.18 c/w sanrex 50 seaview blvd. port washington, ny 11050- 4618 ph.(516) 625-1313 fax( 516) 625-8845 e-mail: semi@sanrex.com pk series pd series
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