visible laser diode optical and electrical characteristics ( tc=25oc ) description symbol min. typical max. test condition lasing wavelength (nm) l l p 645 655 665 p o = 30 mw threshold current (ma) ith 30 50 70 p o = 30 mw operation current (ma) iop 60 80 100 p o = 30 mw operation voltage (v) vop 2.0 2.2 2.7 p o = 30 mw monitor current (a) im 10 - - p o = 30 mw, vr= 5 v slope efficiency (mw/ma) ? 0.3 0.4 0.7 *** beam divergence | (o) q q | 8 10 11 p o = 30 mw beam divergence ^ ^ (o) q^ q^ 25 31 40 p o = 30 mw astigmatism (m) as *** 11 *** p o = 30 mw, na= 0.4 absolute maximum ratings ( tc=25oc ) description symbol rated value optical p ower (mw) p o 30 operation temperature (oc) top - 10 to +40 storage temperature (oc) tstg - 40 to +85 ld r everse v oltage (v) vldr 2 pd r everse v oltage (v) vpdr 30 features index guided mqw structure wavelength : 655 nm (typ.) optical power : 30 mw cw threshold current : 50 ma ( typ. ) sta ndard package : 9.0 mm ? RLT6530G
|
