KDR8702H features n-ch r ds(on) = 54m @v gs =2.5v 3.6a,20v r ds(on) =38m @v gs =4.5v p-ch r ds(on) = 110 m @vgs=-2.5v -2.6 a, -20 v r ds(on) =80m @v gs =-4.5v fast switching speed high performance trench technology for extremely low r ds(on) absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage v dss 20 -20 v gate to source voltage v gs 12 8 v drain current continuous (note 1a) 3.6 -2.6 a drain current pulsed 15 -10 a power dissipation for single operation (note 1a) p d w operating and storage temperature t j ,t stg thermal resistance junction to ambient (note 1a) r ja /w thermal resistance junction to ambient (note 1b) r ja /w thermal resistance junction to case (note 1) r jc /w i d 0.8 -55to150 146 76 40 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 3 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit v gs =0v,i d =250 a n-ch 20 v gs =0v,i d =-250 a p-ch -20 i d = 250 a, referenced to 25 n-ch 36 i d =-250 a, referenced to 25 p-ch -15 v ds = 16v, v gs =0v n-ch 1 v ds =-16v,v gs =0v p-ch -1 v gs = 12 v, v ds =0v n-ch 100 v gs = 8v,v ds =0v p-ch 100 v ds =v gs ,i d =250 a n-ch 0.6 0.8 1.5 v ds =v gs ,i d =-250 a p-ch -0.4 -0.7 -1.6 i d = 250 a, referenced to 25 n-ch -2 i d =-250 a, referenced to 25 p-ch 2.5 v gs =4.5v,i d =3.6a 31 38 v gs =2.5v,i d =3.1a 42 54 v gs =4.5v,i d =3.6 a,tj = 125 41 58 v gs =-4.5v,i d =-2.6 a 66 80 v gs =-2.5v,i d =-2.2 a 85 110 v gs =-4.5v,i d =-2.6 a,tj = 125 83 108 v gs =4.5v,v ds =5v n-ch 10 v gs =-4.5v,v ds =-5v p-ch -10 v ds =v gs ,i d =250 a n-ch 15 v ds =v gs ,i d =-250 a p-ch 9 n-ch 1 p-ch 4.8 n-channel n-ch 650 v ds =10v,v gs = 0 v,f = 1.0 mhz p-ch 607 n-ch 170 p-channel p-ch 165 v ds =-10v,v gs = 0 v,f = 1.0 mhz n-ch 80 p-ch 60 n-channel n-ch 8 16 v dd =10v,i d = 1 a, p-ch 12 22 v gs =4.5v,r gen =6 n-ch 9 18 p-ch 11 20 p-channel n-ch 16 29 v dd =-10v,i d =-1a, p-ch 26 42 v gs =-4.5v,r gen =6 n-ch 7 14 p-ch 8 16 v gs(th) gate threshold voltage n-ch b vdss drain-source breakdown voltage breakdown voltage temperature coefficient gate-body leakage i gss i dss zero gate voltage drain current gate threshold voltage temperature coefficient r ds(on) static drain-source on-resistance i d(on) on-state drain current r ds(on) static drain-source on-resistance g fs forward transconductance r g gate resistance c iss c oss c rss input capacitance output capacitance reverse transfer capacitance t d(on) turn-on delay time tr turn-on rise time t d(off) turn-off delay time t f turn-off fall time p-ch v mv/ a na v mv/ m testconditons ns ns pf pf ns ns a s v gs =15mv,f=1.0mhz pf KDR8702H smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 2 of 3 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit n-channel n-ch 7 10 v ds =10v,i d =3.6a,v gs =4.5v p-ch 6 8 (note 2) n-ch 1.3 p-channel p-ch 1.2 v ds =-10v,i d =-2.6a,v gs =-4.5v n-ch 2.2 (note 2) p-ch 1.6 n-ch 0.7 p-ch -0.7 v gs =0v,i s = 0.7a (not 2) n-ch 0.7 1.2 v gs =0v,i s = -0.7a (not 2) p-ch -0.7 -1.2 n-channel n-ch 16 i f =3.6a,d if /d t = 100 a/ s p-ch 22 n-ch 0.6 p-channel p-ch 0.7 i f =-2.6a,d if /d t =100a/ s n-ch 5 p-ch 8 q g total gate charge gate-source charge q gs q gd gate-drain charge i s maximum continuous drain-source diode forward current v sd drain-source diode forward voltage trr diode reverse recovery time maximum reverse recovery current irm qrr diode reverse recovery charge testconditons nc nc ns a nc a v nc KDR8702H smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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