3 to 6 ghz mesfet rejection mixer model: irf0306hi2 features ? rf/lo coverage......... 3 to 6 ghz ? if operation............... dc to 300 mhz ? lo power range.........+13 to +23 dbm ? image rejection.......... 20 db typical ? input ip 3 .................... +33 dbm typical ? input p1 db comp...... +23 dbm typical electrical specifications input parameters condition units min. typ. max. rf frequency range ghz 3 6 rf vswr (if = -10 dbm, lo = +23 dbm) ratio 1.5:1 lo frequency range ghz 3 6 lo power range dbm +13 +26 lo vswr lo = +23 dbm ratio +10 1.25:1 dc power -15 vdc ma 14 transfer characteristics condition units min. typ. max. conversion loss lo = +23 dbm db 8 9 single-sideband noise figure lo = +23 dbm db 9.5 image rejection (note 2) if = 100 mhz db 18 20 lo-to-rf isolation db 20 30 lo-to-if isolation db 35 if-to-rf isolation db 30 input power at 1 db compression (note 2) lo = +13 dbm dbm +20 +23 input two-tone third-order intercept point (note 2) lo = +13 dbm dbm +33 output parameters condition units min. typ. max. if frequency range (notes 1 and 3) 3 db bandwidth mhz dc 300 if vswr (rf = -10 dbm, lo = +13 dbm) ratio 2.5:1 this mixer is designed to reject the image noise of a low-noise rf preamplifier without degrading the dynam- ic range from second-stage mixer compression. higher and lower power mesfets are available with pro- portional changes in lo power and ip 3 . lower power versions are useful for upgrading systems using schottky diode mixers without changing the lo power. this unit is also available with separate i and q out- puts for high-level, low phase-noise and demodulator applications. 45
46 234567 0 10 20 30 40 50 frequency (ghz) 2345 7 0 10 20 30 40 50 frequency (ghz) image rejection (db) isolation (lo to rf) image rejection (lo = +23 dbm) 6 conversion loss (db) isolation (db) conversion loss (lo = +23 dbm, if = 100 mhz) 234567 0 2 4 6 8 frequency (ghz) irfo306hi2 typical data maximum ratings specifications taken at .......................... +25c operating temperature .......................... -54 to +85c storage temperature ............................ -65 to +125c outline drawing general notes 1. to specify the if frequency, select from the following standard options, or contact miteq: suffix a: 20C40 mhz, suffix b: 40C80 mhz, suffix c: 100C200 mhz, suffix q: i/q outputs (dc to 300 mhz) 2. standard units are aligned for lo < rf. for lo > rf add suffix l to the end of the part number. 3. maximum linear output voltage as i/q phase detector = 1.4 volts (50 ohms). typical output voltage with no rf input = 50 mv (dc offset voltage) .100 dia. mtg. hole (typ. 2 places) 1.700 2.00 1.850 type sma field replaceable female connector (typ. 3 places) .150 .50 .250 .625 .875 .250 .258 1.00 .500 .075 dc power rf ground .375 .063 .250 if lo .750 .250 material: kovar finish: nickel single-tone (m) rf x (n) lo relative spur level (dbc) (rf = 0 dbm, lo = +23 dbm) spur rf test lo test spur (m) rf x (n) lo freq. (ghz) freq. (ghz) level (dbc) 1 x -1 4.1 4 0 -1 x 1 3.9 4 -2.5 1x 3 - - - 2 x -2 4.05 4 -4 -2 x 2 3.95 4 -4 2x 3 - - - 3x 1 - - - 3 x -3 4.03 4 -70 -3 x 3 3.97 4 -65
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