junction size: 30 mm diameter v rrm class: 400 to 1600 v passivation process: diffused junction high power rectifier diodes ir30ddr..l series major ratings and characteristics parameters units test conditions v fm maximum forward voltage 1.28v t j = 25c, i f = 1000 a v rrm reverse breakdown voltage range 400 to 1600 v t j = 150c, i rrm = 20 ma mechanical characteristics nominal back metal composition al - ni - au nominal front metal composition nickel plate molibdenum disc chip dimensions 30 mm diameter (see drawing) recommended storage environment storage in original container, in dessicated nitrogen, with no contamination bulletin i0307j 11/01 1 www.irf.com
2 www.irf.com ir30ddr..l series bulletin i0307j 11/01 ir 30 d d r 16 l 1 2 3 4 device code ordering information table 5 6 outline table 1 - international rectifier device 2 - chip dimension in millimeters 3 - device identifier between chip with same diameter 4 - type of device: d = standard recovery diode 5 - passivation: r = rubber for all junctions 6 - voltage code: code x 100 = v rrm 7 - metallization: l = nickel plate molibdenum disc (anode) al - ni - au (cathode) 7 all dimensions are in millimeters (inches) available class 04 = 400 v 08 = 800 v 10 = 1000 v 12 = 1200 v 16 = 1600 v
3 www.irf.com ir30ddr..l series bulletin i0307j 11/01 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 11/01 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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