AO4703 symbol unit s v ds v v gs v t a =25c t a =70c i dm v ka v t a =25c t a =70c i fm t a =25c t a =70c t j , t stg c symbol unit s r jl r jl maximum junction-to-lead c steady-state pulsed forward current b r ja 40 maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state 75 75 maximum junction-to-lead c steady-state 21 -55 to 150 typ maximum junction-to-ambient a steady-state continuous forward current a parameter: thermal characteristics mosfet maximum junction-to-ambient a t 10s parameter -55 to 150 a absolute maximum ratings t a =25c unless otherwise noted p d i d 4.4 a 3.2 30 continuous drain current a gate-source voltage schottky drain-source voltage i f thermal characteristics schottky 40 30 28 54 max c/w c/w mosfet -30 25 -12 -10 -60 3 pulsed drain current b junction and storage temperature range 3 w schottky reverse voltage 30 2.1 2.1 power dissipation features v ds (v) = -30v i d = -12a (v gs = - 20v) r ds(on) < 14m ? (v gs = - 20v) r ds(on) < 15m ? (v gs = - 10v) schottky v ds (v) = 30v, i f = 3a, v f =0.5v@1a the AO4703 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of non-synchronous dc-dc converters. standard product AO4703 is pb-free (meets rohs & sony 259 specifications). AO4703l is a green product ordering option. AO4703 and AO4703l are electrically identical. g d s a k g s s a d/k d/k d/k d/k 1 2 3 4 8 7 6 5 soic-8 p-channel enhancement mode field effect transistor with schottky diode general description www.freescale.net.cn 1 / 5
AO4703 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7 -2.5 -3 v i d(on) 60 a 12 15 t j =125c 16 20 11 14 m ? 25 m ? g fs 26 s v sd -0.72 -1 v i s -4.2 a c iss 2076 pf c oss 503 pf c rss 302 pf r g 2 ? q g 37.2 nc q gs 7nc q gd 10.4 nc t d(on) 12.4 ns t r 8.2 ns t d(off) 25.6 ns t f 12 ns t rr 33 ns q rr 23 nc schottky parameters v f 0.45 0.5 v 0.007 0.05 3.2 10 12 20 c t 37 pf this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =-12a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-12a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.25 ? , r gen =3 ? m ? v gs =-20v, i d =-10a i s =-1a,v gs =0v v ds =-5v, i d =-10a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-12a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-4.5v, i d =-10a v gs =-10v, v ds =-5v v gs =-10v, i d =-10a reverse transfer capacitance forward voltage drop i f =1.0a i rm maximum reverse leakage current v r =30v ma v r =30v, t j =125c v r =30v, t j =150c junction capacitance v r =15v a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev3: august 2005 www.freescale.net.cn 2 / 5
AO4703, AO4703l p-channel: typical electrical and thermal characteristics 0 10 20 30 40 50 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-4v -4.5v -5v -5.5v -10v 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 0 5 10 15 20 25 30 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 0 10 20 30 40 50 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-6v v gs =-10v i d =-10a 25c 125c i d =-10a -6v -8v www.freescale.net.cn 3 / 5
AO4703 p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-12a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 5
AO4703 typical electrical and thermal characteristics: schottk y 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v f (volts) figure 12: schottky forward characteristics i f (amps) 0 50 100 150 200 250 0 5 10 15 20 25 30 v ka (volts) figure 13: schottky capacitance characteristics capacitance (pf) 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175 temperature (c) figure 15: schottky leakage current vs. junction temperature leakage current (ma) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: schottky normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 temperature (c) v f (volts) figure 14: schottky forward drop vs. junction temperature single pulse d=t on / t t j,pk =t a +p dm .z ja .r ja r ja =40c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse f = 1mhz i f =1a 25c i f =3a v r =30v 125c t on t p d www.freescale.net.cn 5 / 5
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