2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f 2SA1611 transistor (pnp) features power dissipation p cm : 0.15 w (tamb=25 ) collector current i cm : -0.1 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -100 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -60 v,i e =0 -0.1 a emitter cut-off current i ebo v eb = -5 v, i c =0 -0.1 a dc current gain h fe(1) v ce = -6v , i c = -1 ma 90 600 collector-emitter saturation voltage v ce(sat) i c = -100 ma, i b = -10 ma -0.3 v base-emitter voltage v be v ce = -6 v, i c = -1 ma -0.58 -0.68 v transition frequency f t v ce = -6 v, i c = -10 ma 180 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 4.5 pf classification of h fe(1) rank m4 m5 m6 m7 range 90-180 135-270 200-400 300-600 marking m4 m5 m6 m7 unit: mm sot-323 1. base 2. emitter 3. collector 2SA1611 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
typical characteristics 2SA1611 2SA1611 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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