1 composite transistors UN602 silicon pnp epitaxial planer transistor (tr) silicon schottky barrier diode (di) for dcCdc converter n features l two elements incorporated into one package. (tr+di) l reduction of the mounting area and assembly cost by one half. l automatic mounting possible through 12mm wide emboss-tap- ing supply. n basic part number of element l m253l+b3b07 (name of developed product) n absolute maximum ratings (ta=25?c) unit: mm marking symbol: 6b internal connection parameter symbol ratings unit collector to base voltage v cbo C15 v collector to emitter voltage v ceo C11 v emitter to base voltage v ebo C7 v collector current i c C3 a peak collector current i cp C5 a total power dissipation p t *1 1w junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c reverse voltage v r 30 v peak forward current i f(av) 700 ma non-repetitive peak forward current i fsm 2a non-repetitive peak forward voltage v rrm 30 v junction temperature t j 125 ?c storage temperature t stg C55 to +125 ?c transistor block mini-power type package (6Cpin) diode block *2 *1 printed circuit board: copper foil area of 4cm 2 or more and thickness of 1.7mm for the collector portion. *2 rated input/output frequency: 400mhz note: this schottky barrier diode is sensitive to electric shock (static elec- tricity, etc.). be careful about the charge of a human body and leakage of the equip- ment used. 1 2 3 6 5 4 2.5 0.2 1.5 0.2 6-0.4 0.1 4-1.5 0.1 0.25 0.1 0 to 0.1 0.05 0.05 4.5 0.2 (f 0.8) (0.7) 0.6 0.1 (0.4) 1.8 0.1 (1.05) 16 25 34 4.5 0.2 maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
2 composite transistors n electrical characteristics (ta=25?c) l transistor block l diode block parameter symbol conditions min typ max unit forward voltage (dc) v f i f = 700ma 0.55 v reverse current (dc) i r v r = 15v 80 m a pin capacitance c t v r = 0v, f = 1mhz 120 pf reverse recovery time t rr * i f = i r = 100ma, i rr = 10ma, r l = 100 w 7.5 ns parameter symbol conditions min typ max unit collector to base voltage v cbo i c = e10 m a, i e = 0 e15 v collector to emitter voltage v ceo i c = e1ma, i b = 0 e11 v emitter to base voltage v ebo i e = e10 m a, i c = 0 e7 v collector cutoff current i cbo v cb = e10v, i e = 0 e 0.1 m a forward current transfer ratio h fe v ce = e2v, i c = e500ma* 140 560 collector to emitter saturation voltage v ce(sat) i c = e1.5ma, i b = e30ma* e 0.22 e 0.4 v transition frequency f t v cb = e10v, i e = 50ma, f = 200mhz 120 mhz collector output capacitance c ob v cb = e10v, i e = 0, f = 1mhz 26 pf * pulse test * t rr measuring circuit a bias insertion unit n-50bu 90% pulse generator pg-10n r s =50 w w.f.analyzer sas-8130 r i =50 w t p =2 m s t r =0.35ns d =0.05 i f =100ma i r =100ma r l =100 w 10% input pulse output pulse i rr =10ma t r t p t rr v r i f t t UN602
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