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july 2010 doc id 17776 rev 1 1/12 12 STP52N25M5 n-channel 250 v, 0.055 ? , 28 a, to-220 mdmesh tm v power mosfet features amongst the best r ds(on) * area high dv/dt capability excellent switching performance easy to drive 100% avalanche tested application switching applications description this devices is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss r ds(on) max i d STP52N25M5 250 v < 0.065 ? 28 a to-220 1 2 3 !-v $ ' 3 table 1. device summary order code marking package packaging STP52N25M5 52n25m5 to-220 tube www.st.com
contents STP52N25M5 2/12 doc id 17776 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP52N25M5 electrical ratings doc id 17776 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 28 a i d drain current (continuous) at t c = 100 c 18 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 112 a p tot total dissipation at t c = 25 c 110 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 230 mj dv/dt (2) 2. i sd 28 a, di/dt 400 a/s, v peak < v (br)dss. peak diode recovery voltage slope 15 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.14 c/w r thj-amb thermal resistance junc tion-pcb max 62.5 c/w t j maximum lead temperature for soldering purpose 300 c/w
electrical characteristics STP52N25M5 4/12 doc id 17776 rev 1 2 electrical characteristics (tcase =25c unless ot herwise specified). table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 250 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 14 a 0.055 0.065 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1770 110 17 - pf pf pf c o(er) (1) 1. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. equivalent output capacitance energy related v gs = 0, v ds = 0 to 80% v (br)dss -93-pf c o(tr) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. equivalent output capacitance time related v gs = 0, v ds = 0 to 80% v (br)dss -178-pf r g gate input resistance f=1 mhz open drain - 2 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 200 v, i d = 28 a, v gs = 10 v (see figure 14 ) - 47 10 24 - nc nc nc
STP52N25M5 electrical characteristics doc id 17776 rev 1 5/12 table 6. switching times symbol parameter test conditions min. typ. max unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 125 v, i d = 14 a, r g = 4.7 ?, v gs = 10 v (see figure 13 ) - 40 18 64 82 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 28 112 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 28 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 28 a, di/dt = 100 a/s v dd = 60 v, t j = 25 c (see figure 15 ) - 168 1.2 14.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 28 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 15 ) - 196 1.7 17 ns c a
electrical characteristics STP52N25M5 6/12 doc id 17776 rev 1 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3ingle pulse !-v ) $ 6 $3 6 ! 6 6 6 6 '3 6 !-v ) $ 6 '3 6 ! !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 '3 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v
STP52N25M5 electrical characteristics doc id 17776 rev 1 7/12 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. normalized b vdss vs temperature # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ? * !-v 6 '3th 4 * ? # norm !-v 2 $3on 4 * ? # norm !-v "6 $33 4 * ? # norm !-v
test circuits STP52N25M5 8/12 doc id 17776 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STP52N25M5 package mechanical data doc id 17776 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STP52N25M5 10/12 doc id 17776 rev 1 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
STP52N25M5 revision history doc id 17776 rev 1 11/12 5 revision history table 8. document revision history date revision changes 29-jul-2010 1 first release
STP52N25M5 12/12 doc id 17776 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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