1/8 preliminary data september 2002 std38nh02l - STD38NH02L-1 n-channel 20v - 0.011 w - 38a dpak/ipak stripfet ? iii power mosfet (1) starting t j =25 c, i d =19a, v dd =18v n typical r ds (on) = 0.011 w @10v n r ds(on) *q g industry's benchmark n conduction losses reduced n switching losses reduced n add suffix at4o for ordering in tape & reel description the std38nh02l utilizes the latest advanced de- sign rules of st's proprietary stripfet ? technolo- gy. this is suitable fot the most demanding dc-dc converter application where high efficiency is to be achieved. applications n specifically designed and optimised for high efficiency dc/dc converters absolute maximum ratings ( l ) pulse width limi ted by safe operating area type v dss r ds(on) i d std38nh02l 20 v <0.0135 w 38 a STD38NH02L-1 20 v <0.0135 w 38 a symbol parameter value unit v ds drain-source voltage (v gs =0) 20 v v dgr drain-gate voltage (r gs =20k w ) 20 v v gs gate- source voltage 20 v i d drain current (continuous) at t c =25 c 38 a i d drain current (continuous) at t c = 100 c 27 a i dm ( l ) drain current (pulsed) 152 a p tot total dissipation at t c =25 c 40 w derating factor 0.27 w/ c e as (1) single pulse avalanche energy 250 mj t stg storage temperature 55 to 175 c t j max. operating junction temperature dpak 1 3 3 2 1 ipak internal schematic diagram
std38nh02l - STD38NH02L-1 2/8 thermal data electrical characteristics (t case =25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 3.75 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 20 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 10 m a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 1v r ds (on) static drain-source on resistance v gs = 10v, i d =19a v gs = 6.3 v, i d =19a 0.011 0.013 0.0135 0.017 w w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =20v , i d =19a 6 s c iss input capacitance v ds = 15v, f = 1 mhz, v gs =0 1070 pf c oss output capacitance 305 pf c rss reverse transfer capacitance 45 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 1 w
3/8 std38nh02l - STD38NH02L-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =10v,i d =19a r g = 4.7 w v gs =10 v (see test circuit, figure 3) 7ns t r rise time 62 ns q g q gs q gd total gate charge gate-source charge gate-drain charge 0.44v v dd 10v, i d =38a, v gs =10v 18 4 2.5 24 nc nc nc symbol parameter test condit ions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =10v,i d =19a, r g =4.7 w, v gs =10v (see test circuit, figure 3) 25 12 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 38 a i sdm (2) source-drain current (pulsed) 152 a v sd (1) forward on voltage i sd =38a,v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 38 a, di/dt = 100a/ m s, v dd =18v,t j = 150 c (see test circuit, figure 5) 27 22 1.6 ns nc a
std38nh02l - STD38NH02L-1 4/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
5/8 std38nh02l - STD38NH02L-1 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
std38nh02l - STD38NH02L-1 6/8 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 13 == b3 b b6 b2 e g == == b5 2 to-251 (ipak) mechanical data 0068771-e
7/8 std38nh02l - STD38NH02L-1 tape and reel shipment (suffix ot4o)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
std38nh02l - STD38NH02L-1 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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