smd type transistors bcx51,bcx52,bcx53 features high current (max. 1 a). low voltage (max. 80 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage bcx51 v cbo -45 v bcx52 -60 v bcx53 -100 v collector-emitter voltage bcx51 v ceo -45 v bcx52 -60 v bcx53 -80 v emitter-base voltage v ebo -5 v collector current i c -1 a peak collector current i cm -1.5 a peak base current i bm -200 ma total power dissipation p tot 1.3 w storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature r amb -65to+150 thermal resistance from junction to ambient r th(j-a) 94 k/w thermal resistance from junction to solder point r th(j-s) 14 k/w smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-30v,i e = 0 -100 na v cb =-30v,i e = 0; tj = 125 -10 a emitter cutoff current i ebo v eb =-5v,i c = 0 -100 na dc current gain h fe i c =-5ma;v ce =-2v 63 i c = -150 ma; v ce = -2 v 63 250 i c = -500 ma; v ce =-2v 40 dc current gain bcx51-10,BCX52-10,bcx53-10 h fe i c = -150 ma; v ce = -2 v 63 160 bcx51-16,bcx52-16,bcx53-16 i c = -150 ma; v ce = -2 v 100 250 collector-emitter saturation voltage v ce(sat) i c = -500 ma; i b = -50 ma -500 mv base to emitter voltage v be i c = -500 ma; v ce =-2v -1 v transition frequency f t i c =-10ma;v ce =-5v;f=100mhz 50 mhz h fe classification type bcx51 bcx51-10 bcx51-16 marking aa ac ad type bcx52 BCX52-10 bcx52-16 marking ae ag am type bcx53 bcx53-10 bcx53-16 marking ah ak al smd type transistors bcx51,bcx52,bcx53 smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
|
