smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source features super low on-state resistance: r ds(on) = 12.5 m max. (v gs =10v,i d =42a) low c iss :c iss = 5900 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 75 v gate to source voltage v gss 20 v i d 83 a i dp * 260 a power dissipation t c =25 100 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =75v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate cutoff voltage v gs(off) v ds =10v,i d =1ma 2.0 3.0 4.0 v forward transfer admittance y fs v ds =10v,i d =42a 21 45 s draintosourceon-stateresistance r ds(on) v gs =10v,i d =42a 9.5 12.5 m input capacitance c iss 5900 pf output capacitance c oss 810 pf reverse transfer capacitance c rss 400 pf turn-on delay time t on 30 ns rise time t r 21 ns turn-off delay time t off 72 ns fall time tf 12 ns total gate charge q g 100 nc gate to source charge q gs 24 nc gate to drain charge q gd 35 nc v ds =10v,v gs =0,f=1mhz i d =42a,v gs(on) =10v,r l =10 ,v dd =38v i d =83a, v dd =60v, v gs =10v 2SK3511 smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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