hit a chi igbt module / s ili con n-channel igbt MBM200GR12A pde-m200g r12a-0 [rated 2 00a /1200v , dual-pack type] f e a t u r e s o u t l i n e d r a w i n g unit in mm w e ight ?f 23 0g 6 30 7 12 35 40 0.8 2- 5.6 25 35 4-fast-on terminal #110 17 45 19 20 18.5 80 92 23 23 3-m5 c1 e2 c2e1 g1 e1 e2 g2 ? low satur a tion volt age and high speed. ? low turn-off sw it ching loss. ? low noise due to built-in free-wh eeli ng diode. ( u l t r a s of t and f ast recov e ry d iod e (usfd)) ? high reliability structure. ? isolated heat sink (ter minals to ba se). circuit diagram e1 g 1 g2 e2 c 1 e2 c2e1 absolute maximum ra tings (t c =25c) item sy m b o l unit v a lue coll ector-emitter v o lt age v ce s v 120 0 gate-emitter v o lt age v ges v 20 dc i c 2 0 0 coll ector curre nt 1ms i cp a 400 dc i f 200 *1 fo rw ard c u rren t 1ms i fm a 400 coll ector po w e r dissip a ti on p c w 125 0 junctio n t e mperature t j c -40 ~ + 150 s t orage t e mpe r ature t st g c -40 ~ + 125 isolatio n v o lt ag e v iso v rms 250 0(ac 1 min u te) t e rminals 1.96 *2 scre w t o rque mounti n g - n m 1.96 *3 notes; *1 : rms current of dio de 60 arms *2 ,*3 : recom m end ed val ue 1.67 nm charact e ristics (t c =25c) item sy m b o l unit min. ty p . max . t e st condition s collector-emitter cut-of f current i ce s m a - - 1 . 0 v ce = 1200v , v ge =0 v gate-emitter leaka ge curr en t i ges n a - - 50 0 v ge = 20v , v ce =0 v coll ector-emitter saturatio n v o lt age v ce (sa t ) v - 2 . 2 2 . 8 i c = 200a, v ge = 15v gate-emitter threshold v o lt age v ge( t o) v - - 1 0 v ce =5 v , i c = 200ma input cap a cit a nce c ie s p f - 1 8 0 00 - v ce = 10v , v ge =0v , f=1mhz rise t i me t r - 0 . 1 5 0 . 3 t u rn-on t i me t on - 0 . 3 0 . 6 fall t i me t f - 0 . 1 0 . 3 s w itc h in g t i me s t u rn-of f t i me t of f s - 0 . 5 1 . 0 reverse recover y t i me t rr s - 0.2 0.4 v cc = 600v , i c = 200a r g =6 .2 ? *4 v ge = 15v inductive l o a d i f = 200a peak f o r w ar d v o lt age dr op v fm v - 2.5 3 . 5 i f = 200a, v ge =0 v igb t r t h (j-c) 0 . 1 t hermal imped ance fwd r t h (j-c) c/w - - 0.2 junction to case notes; *4 : r g value is th e test conditio n ? s va l ue for decis ion of t he s w itc h in g times, not recommend ed v a lue, p l eas e de termine the suit ab le r g value af ter the measurem ent of s w itch in g w a veforms (overs hoot volt a ge, e t c.) w i th ap pli a nce mou n ted. remark; f o r actual ap plic atio n,ple a se confir m this spec.sh eet is the ne w e st revision.
vge = 15v14v13v12v 400 0246810 200 300 100 0 11v typical 10v 9v tc = 25 c collector current, ic (a) collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage pc = 1250w vge = 15v14v13v12v 400 0246810 200 300 100 0 11v typical 10v 9v tc = 125 c collector current, ic (a) collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage ic = 200a ic = 400a 10 8 6 4 2 0 0 5 10 15 20 typical collector to emitter voltage, v ce (v) gate to emitter voltage, v ge (v) collector to emitter voltage vs. gate to emitter voltage tc = 25 c ic = 200a ic = 400a 10 8 6 4 2 0 0 5 10 15 20 typical collector to emitter voltage, v ce (v) gate to emitter voltage, v ge (v) collector to emitter voltage vs. gate to emitter voltage tc = 125 c 20 15 10 5 0 0 400 800 1200 1600 2000 typical vcc = 600v ic = 200a tc = 25 c gate to emitter voltage, v ge (v) gate charge, q g (nc) gate charge characteristics 400 300 200 100 0 012345 typical forward current, i f (a) forward voltage, v f (v) forward voltage of free-wheeling diode v ge = 0v tc = 25 c tc = 125 c pde-m200gr12a-0
pde-m200gr12a-0 1.5 1 0.5 0 0 100 200 300 typical switching time, t ( switching time vs. collector current ton toff vcc = = = ? = ? switching time vs. gate resistance ton toff tf tr v cc = = = = switching loss vs. collector current err eton etoff v cc = = = ? = ? switching loss vs. gate resistance v cc = = = = reverse biased safe operating area v ge = = ? transient thermal impedance diode igbt
1. the information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. before ordering, purchasers are adviced to contact hitachi sales department for the latest version of this data sheets. 2. please be sure to read "precautions for safe use and notices" in the individual brochure before use. 3. in cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement. or consult hitachi?s sales department staff. 4. in no event shall hitachi be liable for any damages that may result from an accident or any other cause during operation of the user?s units according to this data sheets. hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. in no event shall hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. no license is granted by this data sheets under any patents or other rights of any third party or hitachi, ltd. 7. this data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of hitachi, ltd. 8. the products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. hitachi power semiconductors ? for inquiries relating to the products, please contact nearest overseas representatives which is located ?inquiry? portion on the top page of a home page. notices notices notices notices hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
|
