BFQ65 telefunken semiconductors rev. a2, 21-mar-97 1 (7) silicon npn planar rf transistor electrostatic sensitive device. observe precautions for handling. applications rf-amplifier up to ghz range specially for wide band an- tenna amplifier. features high power gain low noise figures high transition frequence 94 9308 1 3 2 marking: bfq 65 plastic case (to 50) 1 = collector; 2 = emitter; 3 = base 13623 absolute maximum ratings parameters symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 2.5 v collector current i c 50 ma total power dissipation t amb 60 c p tot 300 mw junction temperature t j 150 c storage temperature range t stg 65 to +150 c maximum thermal resistance parameters symbol maximum unit junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35 m cu r thja 300 k/w
BFQ65 telefunken semiconductors rev. a2, 21-mar-97 2 (7) electrical dc characteristics t amb = 25 c parameters / test conditions symbol min. typ. max. unit collector-emitter cut-off current v ce = 20 v, v be = c i ces 100 a collector-base cut-off current v cb = 15 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 1 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 10 v collector-emitter saturation voltage i c = 50 ma, i b = 5 ma v cesat 0.1 0.4 v dc forward current transfer ratio i c = 15 ma, v ce = 5 v h fe 60 100 150 electrical ac characteristics t amb = 25 c parameters / test conditions symbol min. typ. max. unit transition frequency v ce = 8 v, i c = 15 ma, , f = 500 mhz f t 7.5 ghz collector-base capacitance v cb = 8 v, f = 1 mhz c cb 0.4 pf collector-emitter capacitance v ce = 8 v, f = 1 mhz c ce 0.3 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 1.0 pf noise figure v ce = 8 v, z s = 50 f = 800 mhz i c = 5 ma i c = 15 ma v ce = 8 v, z s = 50 f = 2 ghz i c = 5 ma i c = 15 ma f f f f 1.3 1.7 2.5 3.0 db db db db power gain i c = 15 ma, v ce = 8 v, f = 2 ghz, z s = 50 z l = z lopt g pe 8 db linear output voltage two tone intermodulation test v ce = 8 v, i c = 15 ma, d im = 60 db, f 1 = 806 mhz, f 2 = 810 mhz, z s = z l = 50 v 01 = v 02 160 mv third order intercept point v ce = 8 v, i c = 15 ma, f = 800 mhz ip 3 26 dbm
BFQ65 telefunken semiconductors rev. a2, 21-mar-97 3 (7) common emitter s-parameters s 11 s 21 s 12 s 22 v ce /v i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang deg deg deg deg 5 100 300 500 800 1000 1200 1500 1800 2000 0.813 0.600 0.447 0.336 0.289 0.264 0.236 0.217 0.205 27.4 71.0 100.9 133.0 149.8 164.8 175.8 157.0 147.5 13.71 10.17 7.39 5.04 4.10 3.48 2.81 2.38 2.17 157.3 125.7 106.9 89.6 81.2 74.4 65.5 57.4 52.8 0.020 0.047 0.063 0.084 0.098 0.114 0.139 0.164 0.179 76.8 62.9 59.4 60.5 61.9 62.6 63.0 62.6 61.9 0.943 0.763 0.652 0.585 0.569 0.563 0.566 0.578 0.589 13.0 28.5 35.2 41.8 46.1 50.7 57.7 65.0 69.8 10 100 300 500 800 1000 1200 1500 1800 2000 0.661 0.398 0.283 0.220 0.194 0.182 0.170 0.157 0.151 38.2 86.9 114.8 144.6 160.9 174.5 168.0 149.9 140.7 21.80 13.04 8.62 5.63 4.55 3.84 3.10 2.63 2.38 148.0 113.8 98.3 84.7 77.9 72.1 64.5 57.1 52.8 0.018 0.039 0.056 0.082 0.101 0.120 0.148 0.177 0.194 74.0 66.1 67.4 69.1 69.4 68.8 67.1 65.2 63.7 0.879 0.636 0.548 0.508 0.501 0.500 0.507 0.521 0.531 18.1 31.3 35.2 41.1 45.7 50.5 58.2 65.8 70.8 8 15 100 300 500 800 1000 1200 1500 1800 2000 0.551 0.304 0.216 0.177 0.160 0.153 0.144 0.136 0.133 45.6 96.1 122.9 152.2 167.4 178.8 163.0 144.9 136.3 26.77 14.11 9.04 5.82 4.69 3.96 3.20 2.71 2.47 142.0 108.4 94.9 82.6 76.4 71.1 63.9 56.8 52.7 0.016 0.036 0.054 0.083 0.102 0.123 0.152 0.182 0.200 72.9 69.4 71.5 72.3 71.9 71.0 68.7 66.0 64.2 0.828 0.576 0.505 0.477 0.474 0.476 0.484 0.498 0.508 21.1 31.3 34.1 40.3 45.2 50.3 58.3 66.2 71.2 20 100 300 500 800 1000 1200 1500 1800 2000 0.472 0.250 0.183 0.157 0.145 0.141 0.133 0.134 0.128 51.3 102.7 129.7 156.6 171.8 174.2 159.7 140.9 135.5 29.92 14.61 9.22 5.92 4.76 4.02 3.25 2.74 2.50 137.7 105.4 92.9 81.6 75.6 70.5 63.5 56.6 52.5 0.015 0.035 0.054 0.083 0.104 0.124 0.155 0.185 0.203 72.8 72.4 73.9 74.2 73.1 71.8 69.4 66.6 64.4 0.788 0.542 0.484 0.462 0.461 0.463 0.472 0.487 0.496 22.8 30.9 33.3 39.5 44.7 50.1 58.2 66.2 71.3 30 100 300 500 800 1000 1200 1500 1800 2000 0.366 0.197 0.158 0.147 0.142 0.139 0.136 0.136 0.132 60.5 114.6 141.2 165.8 178.5 169.5 154.0 138.7 130.5 33.31 15.00 9.32 5.95 4.79 4.04 3.26 2.76 2.51 132.4 102.0 90.8 80.2 74.3 69.3 62.5 55.6 51.6 0.014 0.034 0.053 0.083 0.104 0.125 0.156 0.187 0.204 74.0 75.0 76.3 75.7 74.4 72.8 69.9 66.7 64.5 0.736 0.506 0.461 0.447 0.446 0.450 0.460 0.476 0.486 24.7 29.8 32.0 38.9 44.3 49.8 58.2 66.4 71.7
BFQ65 telefunken semiconductors rev. a2, 21-mar-97 4 (7) typical characteristics (t j = 25 c unless otherwise specified) 0 100 200 300 400 0 30 60 90 120 150 t amb ambient temperature ( c ) 12845 p total power dissipation ( mw ) tot figure 1. total power dissipation vs. ambient temperature 0 2000 4000 6000 8000 10000 0 1020304050 i c collector current ( ma ) 12867 f transition frequency ( mhz ) t v ce =8v f=500mhz figure 2. transition frequency vs. collector current 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 v cb collector base voltage ( v ) 12883 c collector base capacitance ( pf ) cb f=1mhz figure 3. collector base capacitance vs. collector base voltage 0 1 2 3 4 5 0 5 10 15 20 25 i c collector current ( ma ) 12869 f noise figure ( db ) f=800mhz f=2ghz v ce =8v z s =50 figure 4. noise figure vs. collector current
BFQ65 telefunken semiconductors rev. a2, 21-mar-97 5 (7) v ce = 8 v; i c = 15 ma; z 0 = 50 s 11 12 994 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 1 2 5 2.0 ghz 1.0 0.1 0.3 figure 5. input reflection coefficient s 21 12 996 0 90 180 90 10 20 150 120 60 30 120 150 60 30 2.0 ghz 1.0 0.1 0.3 0.5 figure 6. forward transmission coefficient s 12 12 995 0 90 180 90 0.08 0.16 150 120 60 30 120 150 60 30 figure 7. reverse transmission coefficient s 22 12 997 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 2.0 ghz 1.0 0.1 0.3 figure 8. output reflection coefficient
BFQ65 telefunken semiconductors rev. a2, 21-mar-97 6 (7) dimensions in mm 96 12244
BFQ65 telefunken semiconductors rev. a2, 21-mar-97 7 (7) ozone depleting substances policy statement it is the policy of temic telefunken microelectronic gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. temic telefunken microelectronic gmbh semiconductor division has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. temic can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice . parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use temic products for any unintended or unauthorized application, the buyer shall indemnify temic against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. temic telefunken microelectronic gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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