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triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 2 watt packaged amplifier tga2902-scc-sg key features and performance ? 34 dbm midband psat ? 26 db nominal gain ? 8 db typical return loss ? 13 - 17 ghz frequency range ? directional power detector with reference ? 0.25m phemt technology ? bias conditions: 7.5v, 650ma ? package dimensions: 9.4 x 6.4 x 1.8 mm (370 x 250 x 71 mils) preliminary measured performance bias conditions: v d = 7.5v, i d = 650ma primary applications ?vsat ?point to point 0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db) -20 -15 -10 -5 0 5 10 return loss (db) s21 s11 s22 28 29 30 31 32 33 34 35 36 12.5 13.5 14.5 15.5 16.5 17.5 frequency (ghz) output power (dbm) 20 25 30 35 40 45 50 55 60 pae (%) p2db psat pae@psat
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. tga2902-scc-sg table i maximum ratings symbol parameter value notes v d drain voltage 8 v 1/ 2 / v g gate voltage range -5v to 0v 1/ i d drain supply current (quiescent) 1300 ma 1/ 2 / | i g | gate supply current 18 ma 1/ p in input continuous wave power 24 dbm 1/ 2 / p d power dissipation 6.15 w 1/ 2 / 3 / t ch operating channel temperature 150 0 c 4/ t m mounting temperature (30 seconds) 220 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximu m operable values for this device 2/ combinations of supply voltage, supply current, input powe r, and output power shall not exceed p d at a package base temperature of 70 c 3/ when operated at this bias condition with a baseplate te mperature of 70 c, the mttf is reduced from 4.8e+6 to 1.0e+6 hours 4/ junction operating temperatur e will directly affect the de vice median time to failure (mttf). for maximum life, it is reco mmended that junction temperatures be maintained at the lowest possible levels. table ii thermal information parameter test conditions t ch ( c) r jc ( c/w) mttf (hrs) r jc thermal resistance (channel to backside of package) v d = 7.5v i d = 650ma p diss = 4.88w t base = 70 c 132.3 12.8 4.8e+6
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table iii TGA2902-1-SCC-SG rf characterization table (t a = 25 c, nominal) (vd = 7.5v, id = 650ma 5%) limits symbol parameter test conditions min typ max units notes gain small signal gain f = 13-17 22 26 29 db 1/ 2 / irl input return loss f = 13-17 8 db orl output return loss f = 13-17 8 db psat output power @ pin = +14dbm f = 13-17 32.5 33.5 dbm 1/ p2db output power @ 2db gain compression f = 13-17 32.5 dbm i d drain current @ pin = +14dbm f = 13-17 1100 1300 ma i g gate current @ pin = +14dbm f = 13-17 6 18 ma ip3 third order intercept point f = 13-17 38 dbm pae power added efficiency @ pin -= +14dbm f = 13-17 30 % note: table iv lists the rf characteristi cs of typical devices as determined by fixtured measurements. 1/ data taken at 500mhz steps 2/ maximum pin = -10dbm tga2902-scc-sg
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table iv tga2902-2-scc-sg rf characterization table (t a = 25 c, nominal) (vd = 7.5v, id = 650ma 5%) limits s y mbol parameter test conditions min typ max units notes gain small signal gain f = 13.75-14.5 23 26 29 db 1/ 2 / irl input return loss f = 13.75-14.5 8 db orl output return loss f = 13.75-14.5 8 db psat output power @ pin = +14dbm f = 13.75-14.5 33.5 34.0 dbm 1/ p2db output power @ 2db gain compression f = 13.75-14.5 33.5 dbm i d drain current @ pin = +14dbm f = 13.75-14.5 1100 1300 ma i g gate current @ pin = +14dbm f = 13.75-14.5 6 18 ma ip3 third order intercept point f = 13.75-14.5 38.5 dbm pae power added efficiency @ pin -= +14dbm f = 13.75-14.5 30 % note: table iii lists the rf characteristics of typical devices as determined by fixtured measurements. 1/ data taken at 250mhz steps 2/ maximum pin = -10dbm tga2902-scc-sg
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. typical fixtured performance tga2902-scc-sg vd=7.5v, idq=650ma 0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db) -20 -15 -10 -5 0 5 10 return loss (db) s21 s11 s22 vd=7.5v, idq=650ma 0 5 10 15 20 25 30 35 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db) 25c 70c -40c
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. typical fixtured performance tga2902-scc-sg vd=5v, idq=650ma 0 5 10 15 20 25 30 35 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) s21 (db) 25c 70c -40c vd=7.5v, idq=650ma 28 29 30 31 32 33 34 35 36 12.5 13.5 14.5 15.5 16.5 17.5 frequency (ghz) output power (dbm) 20 25 30 35 40 45 50 55 60 pae (%) p2db psat pae@psat
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. typical fixtured performance tga2902-scc-sg vd=7.5v, idq=650ma, f=14ghz 16 18 20 22 24 26 28 30 32 34 36 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 input power (dbm) output power (dbm) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 id (a) pout id vd=5v, idq=650ma 26 27 28 29 30 31 32 33 34 12.5 13.0 13.5 14.0 14.5 15 .0 15.5 16.0 16.5 17.0 17.5 frequency (ghz) output power (dbm) psat
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. typical fixtured performance tga2902-scc-sg vd=5v, idq=650ma, f=14ghz 20 22 24 26 28 30 32 34 36 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 input power (dbm) output power (dbm) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 id (a) pout id vd=7.5v, idq=650ma 32 33 34 35 36 37 38 39 40 41 42 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 frequency (ghz) ip3 (dbm)
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. vd=7.5v, id=650ma -48 -42 -36 -30 -24 -18 -12 -6 0 6 12 18 10 12 14 16 18 20 22 24 26 28 30 output power/tone (dbm) imd3 (dbm) 13.5 ghz 14 ghz 14.5 ghz 15 ghz typical fixtured performance tga2902-scc-sg
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 40k ? 40k ? +5v vdet vref 50 ? rf out dut 5pf package external power detector tga2902 power detector @ 14ghz 0 0.1 0.2 0.3 0.4 0.5 0.6 0 102030405060 sqrt pout (mw^0.5) vref-vdet (v) (20 dbm) (26 dbm) (29.5 dbm) (32 dbm) (34 dbm) tga2902-scc-sg
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 11 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. package pinout diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. tga2902-scc-sg v ref rf in vg vd rf out v det
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 12 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. mechanical drawing side view tga2902-scc-sg dimensions in inches top view 0.250 sq 0.012 typ 0.160 typ cl 0.060, 6 pl 0.010 0.020 0.030 r=0.010 2 pl 0.060 typ 0.006 lead planarity is +0.006/-0.002
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet may 18, 2004 13 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. recommended pwb land pattern 0.000 0.006 - 0.006 0.070 0.090 - 0.070 - 0.090 0.119 - 0.119 0.000 0.119 0.145 0.195 - 0.119 - 0.145 - 0.195 rf in rf out dimensions in inches gnd / thermal vias vd vg tga2902-scc-sg part number amplifier application TGA2902-1-SCC-SG wideband tga2902-2-scc-sg vsat band ordering information

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