unisonic technologies co., ltd utt65p04 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-615.a 65a, 40v p-channel power mosfet ? description the utc utt65p04 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. it can also withstand high energy in the avalanche. ? features * r ds(on) =0.012 ? @ v gs =-10v, i d =-30a * high switching speed ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UTT65P04L-TA3-T utt65p04g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt65p04 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-615.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -40 v gate-source voltage v gss 20 v t c =25c -65 a continuous (t j =175c) t c =125c i d -37 a drain current pulsed i dm -240 a avalanche current i ar -60 a repetitive avalanche energy (note 2) e ar 180 mj power dissipation t c =25c p d 120 (note 4) w junction temperature t j -55~+175 c storage temperature t stg -55~+175 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. duty cycle 1%. 3. when mounted on 1? square pcb (fr-4 material). 4. see soa curve for voltage derating. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1.25 c/w
utt65p04 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-615.a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -40 v v ds =-40v, v gs =0v -1 v ds =-40v, v gs =0v, t j =125c -50 drain-source leakage current i dss v ds =-40v, v gs =0v, t j =175c -250 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -3 v v gs =-10v, i d =-30a 0.012 0.015 v gs =-10v, i d =-30a, t j =125c 0.024 v gs =-10v, i d =-30a, t j =175c 0.030 static drain-source on-state resistance (note 4) r ds(on) v gs =-4.5v, i d =-20a 0.018 0.023 ? forward transconductance (note 1) g fs v ds =-15v, i d =-50a 20 s on state drain current (note 1) i d(on) v gs =-10v, v ds =-5v -120 a dynamic parameters (note 2) input capacitance c iss 5400 pf output capacitance c oss 640 pf reverse transfer capacitance c rss v gs =0v, v ds =-25v, f=1.0mhz 300 pf switching parameters (note 2, 3) total gate charge q g 85 130 nc gate to source charge q gs 25 nc gate to drain charge q gd v gs =-10v, v ds =-20v, i d =-65a 15 nc turn-on delay time t d(on) 15 25 ns rise time t r 380 580 ns turn-off delay time t d(off) 75 115 ns fall-time t f v dd =-20v, i d =-65a, v gen =-10v, r l =0.3 ? r g =2.5 ? 140 210 ns source- drain diode ratings and characteristics (t c =25c) (note 2) maximum body-diode continuous current i s -65 a maximum body-diode pulsed current i sm -240 a drain-source diode forward voltage (note 1) v sd i f =-65a, v gs =0v -1.2 -1.5 v body diode reverse recovery time t rr 40 80 ns peak reverse recovery current i rm(rec) 2.0 4 a body diode reverse recovery charge q rr i f =-65a, di/dt=100a/s 0.04 0.1 c notes: 1. pulse test; pulse width 300s, duty cycle 2% 2. guaranteed by design, not subject to production testing. 3. independent of oper ating temperature. utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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